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Tassin, P., Koschny, T., Kafesaki, M., & Soukoulis, C. M. (2012). A comparison of graphene, superconductors and metals as conductors for metamaterials and plasmonics. Nat. Photon., 6(4), 259–264.
Abstract: Recent advancements in metamaterials and plasmonics have promised a number of exciting applications, in particular at terahertz and optical frequencies. Unfortunately, the noble metals used in these photonic structures are not particularly good conductors at high frequencies, resulting in significant dissipative loss. Here, we address the question of what is a good conductor for metamaterials and plasmonics. For resonant metamaterials, we develop a figure-of-merit for conductors that allows for a straightforward classification of conducting materials according to the resulting dissipative loss in the metamaterial. Application of our method predicts that graphene and high-Tc superconductors are not viable alternatives for metals in metamaterials. We also provide an overview of a number of transition metals, alkali metals and transparent conducting oxides. For plasmonic systems, we predict that graphene and high-Tc superconductors cannot outperform gold as a platform for surface plasmon polaritons, because graphene has a smaller propagation length-to-wavelength ratio.
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Xu, X. A., & Wong, C. W. (2012). Quantum optics: Correlations on a chip. Nat. Photon., 6, 75–76.
Abstract: Researchers have developed a semiconductor structure capable of supporting quantum correlations between photons and strong single-photon nonlinearities, thus paving the way for the development of chip-based devices for quantum secure communications and quantum information processing.
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Gao, J., McMillan, J. F., & Wong, C. W. (2012). Nanophotonics: Remote on-chip coupling. Nat. Photon., 6(1), 7–8.
Abstract: Scientists have demonstrated strongly coupled photon states between two distant high-Q photonic crystal cavities connected by a photonic crystal waveguide. Remote dynamic control over the coupled states could aid the development of delay lines, optical buffers and qubit operations in both classical and quantum information processing.
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Ghali, M., Ohtani1, K., Ohno, Y., & Ohno, H. (2012). Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field. Nat. Comm., 3(661), 6.
Abstract: Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton-exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72 ± 0.05.
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Kumar, S., Wang I. Chan, C., Hu, Q., & Reno, J. L. (2011). A 1.8-THz quantum cascade laser operating significantly above the temperature of ω/kB. Nat. Phys., 7.
Abstract: Several competing technologies continue to advance the field of terahertz science; of particular importance has been the development of a terahertz semiconductor quantum cascade laser (QCL), which is arguably the only solid-state terahertz source with average optical power levels of much greater than a milliwatt. Terahertz QCLs are required to be cryogenically cooled and improvement of their temperature performance is the single most important research goal in the field. Thus far, their maximum operating temperature has been empirically limited to ~ω/kB, a largely inexplicable trend that has bred speculation that a room-temperature terahertz QCL may not be possible in materials used at present. Here, we argue that this behaviour is an indirect consequence of the resonant-tunnelling injection mechanism employed in all previously reported terahertz QCLs. We demonstrate a new scattering-assisted injection scheme to surpass this limit for a 1.8-THz QCL that operates up to ~1.9ω/kB (163 K). Peak optical power in excess of 2 mW was detected from the laser at 155 K. This development should make QCL technology attractive for applications below 2 THz, and initiate new design strategies for realizing a room-temperature terahertz semiconductor laser.
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