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Author 0kunev, 0.; Dzardanov, A.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Gol'tsman, G.; Gershenzon, E.
Title NbN hot electron waveguide mixer for 100 GHz operation Type Conference Article
Year 1994 Publication Proc. 5th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 5th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 214-224
Keywords waveguide NbN HEB mixers
Abstract (up) NbN is a promising superconducting material used to develope hot- electron superconducting mixers with an IF bandwidth over 1 GHz. In the 100 GHz frequency range, the following parameters were obtained for NbN films 50 A thick: the noise temperature of the receiver (DSB) 1000 K; the conversion losses 10 d13, the IF bandwidth 1 GHz; the local oscillator power 1 /LW. An increase of NbN film thickness up to 80-100 A and increase of working temperature up to 7-8 K, and a better mixer matching may allow to broader the IF band up to 3 Gllz, to reduce the conversion losses down to 3-5 dB and the noise tempera- ture down to 200-300 K.
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Call Number Serial 1644
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Author Baselmans, J.; Kooi, J.; Baryshev, A.; Yang, Z. Q.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G.
Title Full characterization of small volume NbN HEB mixers for space applications Type Conference Article
Year 2005 Publication Proc. 16th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 16th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 457-462
Keywords NbN HEB mixers
Abstract (up) NbN phonon cooled HEB’s are one of the most promising bolometer mixer technologies for (near) future (space) applications. Their performance is usually quantified by mea- suring the receiver noise temperature at a given IF frequency, usually around 1 – 2 GHz. However, for any real applications it is vital that one fully knows all the relevant properties of the mixer, including LO power, stability, direct detection, gain bandwidth and noise bandwidth, not only the noise temperature at low IF frequencies. To this aim we have measured all these parameters at the optimal operating point of one single, small volume quasioptical NbN HEB mixer. We find a minimum noise temperature of 900 K at 1.46 THz. We observe a direct detection effect indicated by a change in bias current when changing from a 300 K hot load to a 77 K cold load. Due to this effect we overestimate the noise temperature by about 22% using a 300 K hot load and a 77 K cold load. The LO power needed to reach the optimal operating point is 80 nW at the receiver lens front, 59 nW inside the NbN bridge. However, using the isothermal technique we find a power absorbed in the NbN bridge of 25 nW, a difference of about a factor 2. We obtain a gain bandwidth of 2.3 GHz and a noise bandwidth of 4 GHz. The system Allan time is about 1 sec. in a 50 MHz spectral bandwidth and a deviation from white noise integration (governed by the radiometer equation) occurs at 0.2 sec., which implies a maximum integration time of a few seconds in a 1 MHz bandwidth spectrometer.
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Corporate Author Thesis
Publisher Place of Publication Göteborg, Sweden Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 363
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Author Baryshev, A.; Baselmans, J. J. A.; Reker, S. F.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Vachtomin, Yu.; Maslennikov, S.; Antipov, S.; Voronov, B.; Gol'tsman, G.
Title Direct detection effect in hot electron bolometer mixers Type Abstract
Year 2005 Publication Proc. 16th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 16th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 463-464
Keywords NbN HEB mixers, effect of direct detection, direct detection effect
Abstract (up) NbN phonon cooled hot electron bolometer (HEB) mixers are currently the most sensitive heterodyne detectors at frequencies above 1.2 THz. They combine a good sensitivity (8-15 times the quantum limit), an IF bandwidth of the order of 4-6 GHz and a wide RF bandwidth from 0.7-5.2 THz. However, for use in a space based observatory, such as Herschel, it is of vital importance that the Local Oscillator (LO) power requirement of the mixer is compatible with the low output power of present day THz LO sources. This can be achieved by reducing the mixer volume and critical current. However, the large RF bandwidth and low LO power requirement of such a mixer result in a direct detection effect, characterized by a change in the bias current of the HEB when changing the RF signal from a black body load at 300 K to one at 77 K. As a result the measured sensitivity using a 300 K and 77 K calibration load differs significantly from the small signal sensitivity relevant for astronomical observations. In this article we describe a set of dedicated experiments to characterize the direct detection effect for a small volume quasi-optical NbN phonon cooled HEB mixer. We measure the direct detection effect in a small volume (0.15 μm · 1 μm · 3.5 nm) quasi- optical NbN phonon cooled HEB mixer at 1.6 THz. We found that the small signal sensitivity of the receiver is underestimated by approximately 35% due to the direct detection effect and that the optimal operating point is shifted to higher bias voltages when using calibration loads of 300 K and 77 K. Using a 200 GHz wide band-pass filter at the 4.2 K the direct detection effect virtually disappears. Heterodyne response measurements using water vapor absorption line in a gas cell confirms the existence and a magnitude of a direct detection effect. We also propose a theoretical explanation using uniform electron heating model. This direct detection effect has important implications for the calibration procedure of these receivers in real telescope systems. We are developing Nb HEBs for a large-format, diffusion-cooled hot electron bolometer (HEB) array submillimeter camera. The goal is to produce a 64 pixel array together with the University of Arizona to be used on the HHT on Mt Graham. It is designed to detect in the 850 GHz atmospheric window. We have fabricated Nb HEBs using a new angle- deposition process, which had previously produced high quality Nb-Au bilayer HEB devices at Yale. [1] We have characterized these devices using heterodyne mixing at ~30 GHz to compare to 345 GHz tests at the University of Arizona. We can also directly compare our Nb HEB mixers to SIS mixers in this same 345 GHz system. This allows us to rigorously calibrate the system’s losses and extract the mixer noise temperature in a well characterized mixer block, before undertaking the 850 GHz system. Here we give a report on the initial devices we have fabricated and characterized. * Department of Applied Physics, Yale University ** Department of Astronomy, University of Arizona [1] Applied Physics Letters 84, Number 8; p.1404-7, Feb 23 (2004)
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Call Number Serial 1475
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Author Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G.
Title Low noise NbN superconducting hot electron bolometer mixers at 1.9 and 2.5 THz Type Journal Article
Year 2004 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume 17 Issue 5 Pages S224-S228
Keywords NbN HEB mixers
Abstract (up) NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance between the bolometer itself and the contact structure. Using a combination of in situ cleaning of the NbN film and the use of an additional superconducting interlayer of a 10 nm NbTiN layer between the Au of the contact structure and the NbN film superior noise temperatures have been obtained as low as 950 K at 2.5 THz and 750 K at 1.9 THz. Here we address in detail the DC characterization of these devices, the interface transparencies between the bolometers and the contacts and the consequences of these factors on the mixer performance.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-2048 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 558
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Author Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol’tsman, G.
Title Improved NbN phonon cooled hot electron bolometer mixers Type Conference Article
Year 2003 Publication Proc. 14th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 14th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 413-423
Keywords NbN HEB mixers
Abstract (up) NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance to Au pads. By adding either a 5 nm Nb or a 10 nm NbTiN layer between the Au and NbN, to preserve superconductivity in the NbN under the Au contact pad, superior noise temperatures have been obtained. Using DC I,V curves and resistive transitions in combination with process parameters we analyze the nature of these improved devices and determine interface transparencies.
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Corporate Author Thesis
Publisher Place of Publication Tucson, USA Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 337
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Author Gerecht, E.; Musante, C. F.; Zhuang, Y.; Yngvesson, K. S.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
Title NbN hot electron bolometric mixerss—a new technology for low-noise THz receivers Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 47 Issue 12 Pages 2519-2527
Keywords NbN HEB mixers
Abstract (up) New advances in hot electron bolometer (HEB) mixers have recently resulted in record-low receiver noise temperatures at terahertz frequencies. We have developed quasi-optically coupled NbN HEB mixers and measured noise temperatures up to 2.24 THz, as described in this paper. We project the anticipated future performance of such receivers to have even lower noise temperature and local-oscillator power requirement as well as wider gain and noise bandwidths. We introduce a proposal for integrated focal plane arrays of HEB mixers that will further increase the detection speed of terahertz systems.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1557-9670 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1560
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Author Smirnov, K. V.; Vachtomin, Yu. B.; Antipov, S. V.; Maslennikov, S. N.; Kaurova, N. S.; Drakinsky, V. N.; Voronov, B. M.; Gol'tsman, G. N.; Semenov, A. D.; Richter, H.; Hubers, H.-W.
Title Noise and gain performance of spiral antenna coupled HEB mixers at 0.7 THz and 2.5 THz Type Conference Article
Year 2003 Publication Proc. 14th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 14th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 405-412
Keywords NbN HEB mixers
Abstract (up) Noise and gain performance of hot electron bolometer (HEB) mixers based on ultrathin superconducting NbN films integrated with a spiral antenna was studied. The noise temperature measurements for two samples with different active area of 3 p.m x 0.24 .tni and 1.3 1..tm x 0.12 1.tm were performed at frequencies 0.7 THz and 2.5 THz. The best receiver noise temperatures 370 K and 1600 K, respectively, have been found at these frequencies. The influence of contact resistance between the superconductor and the antenna terminals on the noise temperature of HEB is discussed. The noise and gain bandwidth of 5GHz and 4.2 GHz, respectively, are demonstrated for similar HEB mixer at 0.75 THz.
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Notes Approved no
Call Number Serial 1502
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Author Hübers, H.-W.; Schubert, J.; Krabbe, A.; Birk, M.; Wagner, G.; Semenov, A.; Gol’tsman, G.; Voronov, B.; Gershenzon, E.
Title Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies Type Journal Article
Year 2001 Publication Infrared Physics & Technology Abbreviated Journal Infrared Physics & Technology
Volume 42 Issue 1 Pages 41-47
Keywords NbN HEB mixers, anti-reflection coating
Abstract (up) Parylene C was investigated as anti-reflection coating for silicon at terahertz frequencies. Measurements with a Fourier-transform spectrometer show that the transmittance of pure silicon can be improved by about 30% when applying a layer of Parylene C with a quarter wavelength optical thickness. The 10% bandwidth of this coating extends from 1.5 to 3 THz for a center frequency of 2.3–2.5 THz, where the transmittance is constant. Heterodyne measurements demonstrate that the noise temperature of a hot-electron-bolometric mixer can be reduced significantly by coating the silicon lens of the hybrid antenna with a quarter wavelength Parylene C layer. Compared to the same mixer with an uncoated lens the improvement is about 30% at a frequency of 2.5 THz.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1350-4495 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1548
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Author Gol'tsman, G.; Maslennikov, S.; Finkel, M.; Antipov, S.; Kaurova, N.; Grishina, E.; Polyakov, S.; Vachtomin, Y.; Svechnikov, S.; Smirnov, K.; Voronov, B.
Title Nanostructured ultrathin NbN film as a terahertz hot-electron bolometer mixer Type Conference Article
Year 2006 Publication Proc. MRS Abbreviated Journal Proc. MRS
Volume 935 Issue Pages 210 (1 to 6)
Keywords NbN HEB mixers
Abstract (up) Planar spiral antenna coupled and directly lens coupled NbN HEB mixer structures are studied. An additional MgO buffer layer between the superconducting film and Si substrate is introduced. The buffer layer enables us to increase the gain bandwidth of a HEB mixer due to better acoustic transparency. The gain bandwidth is widened as NbN film thickness decreases and amounts to 5.2 GHz. The noise temperature of antenna coupled mixer is 1300 and 3100 K at 2.5 and 3.8 THz respectively. The structure and composition of NbN films is investigated by X-ray diffraction spectroscopy methods. Noise performance degradation at LO frequencies more than 3 THz is due to the use of a planar antenna and signal loss in contacts between the antenna and the sensitive NbN bridge. The mixer is reconfigured for operation at higher frequencies in a manner that receiver’s noise temperature is only 2300 K (3 times of quantum limit) at LO frequency of 30 THz.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0272-9172 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1440
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Author Vachtomin, Y. B.; Antipov, S. V.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Zhang, W.; Svechnikov, S. I.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Gol’tsman, G. N.
Title Quasioptical hot electron bolometer mixers based on thin NBN films for terahertz region Type Conference Article
Year 2006 Publication Proc. 16th Int. Crimean Microwave and Telecommunication Technology Abbreviated Journal Proc. 16th Int. Crimean Microwave and Telecommunication Technology
Volume 2 Issue Pages 688-689
Keywords NbN HEB mixers
Abstract (up) Presented in this paper are the performances of HEB mixers based on 2-3.5 nm thick NbN films integrated with log-periodic spiral antenna. Double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. Mixer gain bandwidth is 5.2 GHz. Local oscillator power is 1-3 muW for mixers with different active area
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Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1445
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Author Tretyakov, Ivan; Kaurova, N.; Voronov, B. M.; Goltsman, G. N.
Title About effect of the temperature operating conditions on the noise temperature and noise bandwidth of the terahertz range NbN hot-electron bolometers Type Abstract
Year 2018 Publication Proc. 29th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 29th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 113
Keywords NbN HEB mixer
Abstract (up) Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) and NbN bridge length are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb ≪ Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K.
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Notes Approved no
Call Number Serial 1313
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Author Kroug, M.; Cherednichenko, S.; Merkel, H.; Kollberg, E.; Voronov, B.; Gol'tsman, G.; Hübers, H. W.; Richter, H.
Title NbN hot electron bolometric mixers for terahertz receivers Type Journal Article
Year 2001 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 11 Issue 1 Pages 962-965
Keywords NbN HEB mixers
Abstract (up) Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two.
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Notes Approved no
Call Number Serial 312
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Author Baubert, J.; Salez, M.; Merkel, H.; Pons, P.; Cherednichenko, S.; Lecomte, B.; Drakinsky, V.; Goltsman, G.; Leone, B.
Title IF gain bandwidth of membrane-based NbN hot electron bolometers for SHAHIRA Type Journal Article
Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 15 Issue 2 Pages 507-510
Keywords NbN HEB mixers, applications
Abstract (up) SHAHIRA (Submm Heterodyne Array for HIgh-speed Radio Astronomy) is a project supported by the European Space Agency (ESA) and is designed to fly on the SOFIA observatory. A quasi-optic design has been chosen for 2.5/2.7 THz and 4.7 THz, for hydroxyde radical OH, deuterated hydrogen HD and neutral atomic oxygen OI lines observations. Hot electron bolometers (HEBs) have been processed on 1 /spl mu/m thick SiO/sub 2//Si/sub 3/N/sub 4/ stress-less membranes. In this paper we analyse the intermediate frequency (IF) gain bandwidth from the theoretical point of view, and compare it to measurements.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1558-2515 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1468
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Author Ekström, H.; Karasik, B.; Kollberg, E.; Gol'tsman, G.; Gershenzon, E.
Title 350 GHz NbN hot electron bolometer mixer Type Conference Article
Year 1995 Publication Proc. 6th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 6th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 269-283
Keywords NbN HEB mixers
Abstract (up) Superconducting NbN hot-electron bolometer (HEB) mixer devices have been fabricated and measured at 350 GHz. The HEB is integrated with a double dipole antenna on an extended crystalline quartz hyper hemispherical substrate lens. Heterodyne measurement gave a -3 dB bandwidth, mainly determined by the electron- phonon interaction time, of about 680 and 1000 MHz for two different films with Tc = 8.5 and 11 K respectively. The measured DSB receiver noise temperature is around 3000 K at 800 MHz IF frequency. The main contribution to the output noise from the device is due to electron temperature fluctuations with the equivalent output noise temperature TFL-100 K. TH, has the same frequency dependence as the IF response. The contribution from Johnson noise is of the order of T. The RF coupling loss is estimated to be = 6 dB. The film with lower Tc, had an estimated intrinsic low-frequency conversion loss = 7 dB, while the other film had a conversion loss as high as 14 dB. The difference in intrinsic conversion loss is explained by less uniform absorption of radiation. Measurements of the small signal impedance shows a transition of the output impedance from the DC differential resistance Rd=dV/dI in the low frequency limit to the DC resistance R 0 =Uoff 0 in the bias point for frequencies above 3 GHz. We judge that the optimum shape of the IV-characteristic is more easily obtained at THz frequencies where the main restriction in performance should come from problems with the RF coupling.
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Notes Approved no
Call Number Serial 1628
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Author Cherednichenko, S.; Yagoubov, P.; Il'In, K.; Gol'tsman, G.; Gershenzon, E.
Title Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates Type Conference Article
Year 1997 Publication Proc. 8th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 8th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 245-257
Keywords NbN HEB mixers, fabrication process
Abstract (up) The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Notes Approved no
Call Number Serial 276
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