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Author Jiang, Ling; Miao, Wei; Zhang, Wen; Li, Ning; Lin, Zhen Hui; Yao, Qi Jun; Shi, Sheng-Cai; Svechnikov, S. I.; Vakhtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Kaurova, N. S.; Gol'tsman, G. N. url  doi
openurl 
  Title Characterization of a quasi-optical NbN superconducting HEB mixer Type Journal Article
  Year 2006 Publication IEEE Trans. Microwave Theory Techn. Abbreviated Journal IEEE Trans. Microwave Theory Techn.  
  Volume 54 Issue 7 Pages 2944-2948  
  Keywords NbN HEB mixers  
  Abstract (up) In this paper, the performance of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer, cryogenically cooled by a close-cycled 4-K refrigerator, is thoroughly investigated at 300, 500, and 850 GHz. The lowest receiver noise temperatures measured at the respective three frequencies are 1400, 900, and 1350 K, which can go down to 659, 413, and 529 K, respectively, after correcting the loss and associated noise contribution of the quasi-optical system before the measured superconducting HEB mixer. The stability of the quasi-optical superconducting HEB mixer is also investigated here. The Allan variance time measured with a local oscillator pumping at 500 GHz and an IF bandwidth of 110 MHz is 1.5 s at the dc-bias voltage exhibiting the lowest noise temperature and increases to 2.5 s at a dc bias twice that voltage.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0018-9480 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1448  
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Author Meledin, D. V.; Marrone, D. P.; Tong, C.-Y. E.; Gibson, H.; Blundell, R.; Paine, S. N.; Papa, D.C.; Smith, M.; Hunter, T. R.; Battat, J.; Voronov, B.; Gol'tsman, G. url  doi
openurl 
  Title A 1-THz superconducting hot-electron-bolometer receiver for astronomical observations Type Journal Article
  Year 2004 Publication IEEE Trans. Microwave Theory Techn. Abbreviated Journal IEEE Trans. Microwave Theory Techn.  
  Volume 52 Issue 10 Pages 2338-2343  
  Keywords NbN HEB mixer, applications  
  Abstract (up) In this paper, we describe a superconducting hot-electron-bolometer mixer receiver developed to operate in atmospheric windows between 800-1300 GHz. The receiver uses a waveguide mixer element made of 3-4-nm-thick NbN film deposited over crystalline quartz. This mixer yields double-sideband receiver noise temperatures of 1000 K at around 1.0 THz, and 1600 K at 1.26 THz, at an IF of 3.0 GHz. The receiver was successfully tested in the laboratory using a gas cell as a spectral line test source. It is now in use on the Smithsonian Astrophysical Observatory terahertz test telescope in northern Chile.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0018-9480 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1484  
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Author Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Papa, D. C.; Hunter, T. R.; Paine, S. N.; Patt, F.; Gol'tsman, G.; Cherednichenko, S.; Voronov, B.; Gershenzon, E. url  doi
openurl 
  Title Superconductive hot-electron-bolometer mixer receiver for 800-GHz operation Type Journal Article
  Year 2000 Publication IEEE Trans. Microw. Theory Techn. Abbreviated Journal IEEE Trans. Microw. Theory Techn.  
  Volume 48 Issue 4 Pages 683-689  
  Keywords NbN HEB mixers, LO power, local oscillator power, saturation, linearity, dynamic range  
  Abstract (up) In this paper, we describe a superconductive hot-electron-bolometer mixer receiver designed to operate in the partially transmissive 350-μm atmospheric window. The receiver employs an NbN thin-film microbridge as the mixer element, in which the main cooling mechanism of the hot electrons is through electron-phonon interaction. At a local-oscillator frequency of 808 GHz, the measured double-sideband receiver noise temperature is TRX=970 K, across a 1-GHz intermediate-frequency bandwidth centered at 1.8 GHz. We have measured the linearity of the receiver and the amount of local-oscillator power incident on the mixer for optimal operation, which is PLO≈1 μW. This receiver was used in making observations as a facility instrument at the Heinrich Hertz Telescope, Mt. Graham, AZ, during the 1998-1999 winter observing season.  
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  ISSN 0018-9480 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ lobanovyury @ Serial 573  
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Author Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G. doi  openurl
  Title Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer Type Journal Article
  Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 13 Issue 2 Pages 164-167  
  Keywords NbN HEB mixer  
  Abstract (up) In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions.  
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  Notes Approved no  
  Call Number Serial 341  
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Author Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. url  doi
openurl 
  Title Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer Type Journal Article
  Year 2018 Publication Microelectronic Engineering Abbreviated Journal Microelectronic Engineering  
  Volume 195 Issue Pages 26-31  
  Keywords  
  Abstract (up) In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-9317 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1155  
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