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| Author | Dauler, E. A.; Kerman, A. J.; Robinson, B. S.; Yang, J. K. W.; Voronov, B. M.; Gol’tsman, G. N.; Berggren, K. K. | ||||
| Title | Achieving high counting rates in superconducting nanowire single-photon detectors | Type | Conference Article | ||
| Year | 2006 | Publication | CLEO/QELS | Abbreviated Journal | CLEO/QELS |
| Volume | Issue | Pages | JTuD3 (1 to 2) | ||
| Keywords | SSPD; SNSPD; Detectors; Photodetectors; Quantum optics; Quantum detectors; Photon counting; Photons; Pulse shaping; Quantum communications; Single photon detectors; Superconductors | ||||
Abstract  |
Kinetic inductance is determined to be the primary limitation to the counting rate of superconducting nanowire single-photon counters. Approaches for overcoming this limitation will be discussed. | ||||
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| Publisher | Optical Society of America | Place of Publication | Editor | ||
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| Area | Expedition | Conference | Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1451 | |||
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| Author | Shurakov, A.; Tong, Cheuk-yu E.; Grimes, P.; Blundell, R.; Golt'sman, G. | ||||
| Title | A microwave reflection readout scheme for hot electron bolometric direct detector | Type | Journal Article | ||
| Year | 2015 | Publication | IEEE Trans. THz Sci. Technol. | Abbreviated Journal | IEEE Trans. THz Sci. Technol. |
| Volume | 5 | Issue | Pages | 81-84 | |
| Keywords | HEB detectors | ||||
| Abstract |
In this paper, we propose and present data from a fast THz detector based on the repurpose of hot electron bolometer mixers (HEB) fabricated from superconducting NbN thinfilm. This detector is essentially a traditional NbN bolometer element that operates under the influence of a microwave pump. The in-jected microwave power serves the dual purpose of enhancing the detector sensitivity and reading out the impedance changes of the device in response to incidentTHz radiation. We have measured an optical Noise Equivalent Power of 4 pW/ Hz for our detector at a bath temperature of 4.2 K. The measurement frequency was 0.83 THz and the modulation frequency was 1.48 kHz. The readout scheme is versatile and facilitates both high-speed operation as well as multi-pixel applications. |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ atomics90 @ | Serial | 950 | ||
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| Author | Zhizhon, Yan; Majedi, Hamed A. | ||||
| Title | Optoelectronic mixing in the NbN superconducting nanowire single photon detectors | Type | Conference Article | ||
| Year | 2009 | Publication | Proc. SPIE | Abbreviated Journal | Proc. SPIE |
| Volume | 3786 | Issue | Pages | 9 | |
| Keywords | Optoelectronic devices, microwave superconductivity, nonlinearity, single photon detector, superconductivity, nanowire, optical mixing, microwave mixers, amplitude modulation, intensity modulation. | ||||
| Abstract |
In this paper, we present our experimental results on the electrically pumped optoelectronic mixing effect exhibited in a niobium nitride (NbN) superconducting nanowire. The experimental setup in order to test the mixer has been reported in detail. This superconductive nanowire optoelectronic mixer demonstrates photodetection and mixing in an integrated manner. We have explored both effects under a great variety of external conditions, such as temperature and bias current, in order to seek potential ways toward quantum optoelectronic detection and mixing by such nanowire device. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 651 | ||
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| Author | Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. | ||||
| Title | Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector | Type | Conference Article | ||
| Year | 2020 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1695 | Issue | Pages | 012156 | |
| Keywords | Shottky diode, THz, direct detector, multipixel camera | ||||
| Abstract |
In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1153 | |||
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| Author | Goltsman, G. N. | ||||
| Title | Ultrafast nanowire superconducting single-photon detector with photon number resolving capability | Type | Conference Article | ||
| Year | 2009 | Publication | Proc. SPIE | Abbreviated Journal | Proc. SPIE |
| Volume | 7236 | Issue | Pages | 72360D (1 to 11) | |
| Keywords | PNR NbN SSPD, SNSPD, superconducting single-photon detectors, photon number resolving detectors, ultrathin NbN films | ||||
| Abstract |
In this paper we present a review of the state-of-the-art superconducting single-photon detector (SSPD), its characterization and applications. We also present here the next step in the development of SSPD, i.e. photon-number resolving SSPD which simultaneously features GHz counting rate. We have demonstrated resolution up to 4 photons with quantum efficiency of 2.5% and 300 ps response pulse duration providing very short dead time. | ||||
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| Publisher | SPIE | Place of Publication | Editor | Arakawa, Y.; Sasaki, M.; Sotobayashi, H. | |
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| Notes | Approved | no | |||
| Call Number | Serial | 1403 | |||
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| Author | Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
| Title | Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector | Type | Journal Article | ||
| Year | 2020 | Publication | Nanomaterials (Basel) | Abbreviated Journal | Nanomaterials (Basel) |
| Volume | 10 | Issue | 5 | Pages | 1-12 |
| Keywords | detector; quantum dots; short-wave infrared range; silicon | ||||
| Abstract |
In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. | ||||
| Address | Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia | ||||
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| Language | English | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2079-4991 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:32365694; PMCID:PMC7712218 | Approved | no | ||
| Call Number | Serial | 1151 | |||
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| Author | Korneeva, Yuliya; Florya, Irina; Vdovichev, Sergey; Moshkova, Mariya; Simonov, Nikita; Kaurova, Natalia; Korneev, Alexander; Goltsman, Gregory | ||||
| Title | Comparison of hot-spot formation in NbN and MoN thin superconducting films after photon absorption | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Transactions on Applied Superconductivity | Abbreviated Journal | IEEE Transactions on Applied Superconductiv |
| Volume | 27 | Issue | 4 | Pages | 5 |
| Keywords | Thin film devices, Superconducitng photoncounting devices, Nanowire single-photon detectors | ||||
| Abstract |
In superconducting single-photon detectors SSPD the efficiency of local suppression of superconductivity and hotspot formation is controlled by diffusivity and electron-phonon interaction time. Here we selected a material, 3.6-nm-thick MoNx film, which features diffusivity close to those of NbN traditionally used for SSPD fabrication, but with electron-phonon interaction time an order of magnitude larger. In MoNx detectors we study the dependence of detection efficiency on bias current, photon energy, and strip width and compare it with NbN SSPD. We observe non-linear current-energy dependence in MoNx SSPD and more pronounced plateaus in dependences of detection efficiency on bias current which we attribute to longer electronphonon interaction time. |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1114 | ||
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| Author | Zhou, Y.D.; Becker, C. R.; Ashokan, R.; Selamet, Y.; Chang, Y.; Boreiko, R. T.; Betz, A. L.; Sivananthan, S. | ||||
| Title | Progress in far-infrared detection technology | Type | Conference Article | ||
| Year | 2002 | Publication | Proc. SPIE | Abbreviated Journal | |
| Volume | 4795 | Issue | Pages | 121-128 | |
| Keywords | HgCdTe/CdTe, detector | ||||
| Abstract |
II-VI intrinsic very long wavelength infrared (VLWIR, λc~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region. | ||||
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| Series Editor | Longshore, R. E.; Sivananthan, S. | Series Title | Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series | Abbreviated Series Title | |
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| Notes | Approved | no | |||
| Call Number | Serial | 471 | |||
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| Author | Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P. | ||||
| Title | Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors | Type | Journal Article | ||
| Year | 2015 | Publication | Carbon | Abbreviated Journal | Carbon |
| Volume | 87 | Issue | Pages | 330-337 | |
| Keywords | carbon nanotubes, CNT detectors, field effect transistors, FET | ||||
| Abstract |
Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics. | ||||
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| ISSN | 0008-6223 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1778 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. | ||||
| Title | Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum | Type | Journal Article | ||
| Year | 1987 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 46 | Issue | 5 | Pages | 237-238 |
| Keywords | YBCO HTS detectors | ||||
| Abstract |
For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1703 | |||
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