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| Author | Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
| Title | Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector | Type | Journal Article | ||
| Year | 2020 | Publication | Nanomaterials (Basel) | Abbreviated Journal | Nanomaterials (Basel) |
| Volume | 10 | Issue | 5 | Pages | 1-12 |
| Keywords | detector; quantum dots; short-wave infrared range; silicon | ||||
Abstract  |
In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. | ||||
| Address | Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia | ||||
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| Language | English | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2079-4991 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:32365694; PMCID:PMC7712218 | Approved | no | ||
| Call Number | Serial | 1151 | |||
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| Author | Korneeva, Yuliya; Florya, Irina; Vdovichev, Sergey; Moshkova, Mariya; Simonov, Nikita; Kaurova, Natalia; Korneev, Alexander; Goltsman, Gregory | ||||
| Title | Comparison of hot-spot formation in NbN and MoN thin superconducting films after photon absorption | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Transactions on Applied Superconductivity | Abbreviated Journal | IEEE Transactions on Applied Superconductiv |
| Volume | 27 | Issue | 4 | Pages | 5 |
| Keywords | Thin film devices, Superconducitng photoncounting devices, Nanowire single-photon detectors | ||||
| Abstract |
In superconducting single-photon detectors SSPD the efficiency of local suppression of superconductivity and hotspot formation is controlled by diffusivity and electron-phonon interaction time. Here we selected a material, 3.6-nm-thick MoNx film, which features diffusivity close to those of NbN traditionally used for SSPD fabrication, but with electron-phonon interaction time an order of magnitude larger. In MoNx detectors we study the dependence of detection efficiency on bias current, photon energy, and strip width and compare it with NbN SSPD. We observe non-linear current-energy dependence in MoNx SSPD and more pronounced plateaus in dependences of detection efficiency on bias current which we attribute to longer electronphonon interaction time. |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1114 | ||
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| Author | Zhou, Y.D.; Becker, C. R.; Ashokan, R.; Selamet, Y.; Chang, Y.; Boreiko, R. T.; Betz, A. L.; Sivananthan, S. | ||||
| Title | Progress in far-infrared detection technology | Type | Conference Article | ||
| Year | 2002 | Publication | Proc. SPIE | Abbreviated Journal | |
| Volume | 4795 | Issue | Pages | 121-128 | |
| Keywords | HgCdTe/CdTe, detector | ||||
| Abstract |
II-VI intrinsic very long wavelength infrared (VLWIR, λc~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region. | ||||
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| Series Editor | Longshore, R. E.; Sivananthan, S. | Series Title | Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series | Abbreviated Series Title | |
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| Notes | Approved | no | |||
| Call Number | Serial | 471 | |||
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| Author | Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P. | ||||
| Title | Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors | Type | Journal Article | ||
| Year | 2015 | Publication | Carbon | Abbreviated Journal | Carbon |
| Volume | 87 | Issue | Pages | 330-337 | |
| Keywords | carbon nanotubes, CNT detectors, field effect transistors, FET | ||||
| Abstract |
Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics. | ||||
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| ISSN | 0008-6223 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1778 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. | ||||
| Title | Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum | Type | Journal Article | ||
| Year | 1987 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 46 | Issue | 5 | Pages | 237-238 |
| Keywords | YBCO HTS detectors | ||||
| Abstract |
For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1703 | |||
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