| |
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
|
Gol’tsman, G. N. |
Terahertz technology in Russia |
1994 |
24th European Microwave Conf. |
1 |
113-121 |
|
|
|
Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R. |
Ultimate quantum efficiency of a superconducting hot-electron photodetector |
1998 |
Appl. Phys. Lett. |
73 |
3938-3940 |
|
|
|
Smirnov, K. V.; Vakhtomin, Yu. B.; Divochiy, A. V.; Ozhegov, R. V.; Pentin, I. V.; Slivinskaya, E. V.; Tarkhov, M. A.; Gol’tsman, G. N. |
Single-photon detectors for the visible and infrared parts of the spectrum based on NbN nanostructures |
2009 |
Proc. Progress In Electromagnetics Research Symp. |
|
863-864 |
|
|
|
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons |
2010 |
Semicond. |
44 |
1427-1429 |
|
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
|
