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Shurakov, A., Tong, C. - Y. E., Blundell, R., Kaurova, N., Voronov, B., & Gol'tsman, G. (2013). Microwave stabilization of a HEB mixer in a pulse-tube cryocooler. IEEE Trans. Appl. Supercond., 23(3), 1501504.
Abstract: We report the results of our study of the stability of an 800 GHz hot electron bolometer (HEB) mixer cooled with a pulse-tube cryocooler. Pulse-tube cryocoolers introduce temperature fluctuations as well as mechanical vibrations at a frequency of ~1 Hz, both of which can cause receiver gain fluctuations at that frequency. In our system, the motor of the cryocooler was separated from the cryostat to minimize mechanical vibrations, leaving thermal effects as the dominant source of the receiver gain fluctuations. We measured root mean square temperature variations of the 4 K stage of ~7 mK. The HEB mixer was pumped by a solid state local oscillator at 810 GHz. The root mean square current fluctuations at the low noise operating point (1.50 mV, 56.5 μA) were ~0.12 μA, and were predominantly due to thermal fluctuations. To stabilize the bias current, microwave radiation was injected to the HEB mixer. The injected power level was set by a proportional-integral-derivative controller, which completely compensates for the bias current oscillations induced by the pulse-tube cryocooler. Significant improvement in the Allan variance of the receiver output power was obtained, and an Allan time of 5 s was measured.
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Shurakov, A., Seliverstov, S., Kaurova, N., Finkel, M., Voronov, B., & Goltsman, G. (2012). Input bandwidth of hot electron bolometer with spiral antenna. IEEE Trans. THz Sci. Technol., 2(4), 400–405.
Abstract: We report the results of our study of the input bandwidth of hot electron bolometers (HEB) embedded into the planar log-spiral antenna. The sensitive element is made of the ultrathin superconducting NbN film patterned as a bridge at the feed of the antenna. The contacts between the antenna and a sensitive element are made from in situ deposited gold (i.e., deposited over NbN film without breaking vacuum), which gives high quality contacts and makes the response of the HEB at higher frequencies less affected by the RF loss. An accurate experimental spectroscopic procedure is demonstrated that leads to the confirmation of the wide ( 8 THz) bandwidth in this antenna coupled device.
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Seki, T., Shibata, H., Takesue, H., Tokura, Y., & Imoto, N. (2010). Comparison of timing jitter between NbN superconducting single-photon detector and avalanche photodiode. Phys. C, 470(20), 1534–1537.
Abstract: We report the pulse-to-pulse timing jitter measurement of a niobium nitride (NbN) superconducting single-photon detector (SSPD) and an InGaAs avalanche photodiode (APD) at 1550-nm wavelength. A direct comparison of their timing jitter was performed by using the same experimental configuration to measure both detectors. The measured jitter of the SSPD and the APD are 75 and 84 ps at full-width at half-maximum (FWHM), and 138 and 384 ps at full-width at tenth-maximum (FWTM), respectively. The jitter of the SSPD remains small at FWTM while that of APD is wide. We also estimated the transmission distances and secure key generation rates for fiber-based quantum key distribution (QKD) which uses these detectors. The estimated transmission distances of the APD are 86 km and 107 km with respect to 1 ns and 100 ps time windows, respectively, and those of the SSPD are 125 km and 172 km with respect to 1 ns and 100 ps time windows, respectively. This estimation indicates the SSPDЃfs advantages for QKD compared to the APD.
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Nebosis, R. S., Heusinger, M. A., Semenov, A. D., Lang, P. T., Schatz, W., Steinke, R., et al. (1993). Ultrafast photoresponse of an YBa2Cu3O7-δ film to far-infrared radiation pulses. Opt. Lett., 18(2), 96–97.
Abstract: We report the observation of an ultrafast photoresponse of a high-T(c), film to far-infrared radiation pulses. The response of a sample, consisting of a current-carrying structured YBa(2)Cu(3)O(7-delta) film cooled to liquid-nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far-infrared laser in the frequency range from 0.7 to 7 THz. We found that the response time was limited by the time resolution, 120 ps, of our electronic registration equipment.
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Shah, J., Pinczuk, A., Gossard, A. C., & Wiegmann, W. (1985). Energy-loss rates for hot electrons and holes in GaAs quantum wells. Phys. Rev. Lett., 54, 2045–2048.
Abstract: We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening.
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