| Records |
| Author |
Sobolewski, R.; Zhang, J.; Slysz, W.; Pearlman, A.; Verevkin, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Goltsman, G. N. |
| Title |
Ultrafast superconducting single-photon optical detectors |
Type |
Conference Article |
| Year |
2003 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
5123 |
Issue |
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Pages |
1-11 |
| Keywords |
NbN SSPD, SNSPD |
Abstract  |
We present a new class of single-photon devices for counting of both visible and infrared photons. Our superconducting single-photon detectors (SSPDs) are characterized by the intrinsic quantum efficiency (QE) reaching up to 100%, above 10 GHz counting rate, and negligible dark counts. The detection mechanism is based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The devices are fabricated from 3.5-nm-thick NbN films and operate at 4.2 K, well below the NbN superconducting transition temperature. Various continuous and pulsed laser sources in the wavelength range from 0.4 μm up to >3 μm were implemented in our experiments, enabling us to determine the detector QE in the photon-counting mode, response time, and jitter. For our best 3.5-nm-thick, 10×10 μm2-area devices, QE was found to reach almost 100% for any wavelength shorter than about 800 nm. For longer-wavelength (infrared) radiation, QE decreased exponentially with the photon wavelength increase. Time-resolved measurements of our SSPDs showed that the system-limited detector response pulse width was below 150 ps. The system jitter was measured to be 35 ps. In terms of the counting rate, jitter, and dark counts, the NbN SSPDs significantly outperform their semiconductor counterparts. Already identifeid and implemented applications of our devices range from noninvasive testing of semiconductor VLSI circuits to free-space quantum communications and quantum cryptography. |
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| Publisher |
SPIE |
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Editor |
Spigulis, J.; Teteris, J.; Ozolinsh, M.; Lusis, A. |
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Conference |
Advanced Optical Devices, Technologies, and Medical Applications |
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Serial |
1513 |
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| Author |
Goltsman, G. N.; Korneev, A. A.; Finkel, M. I.; Divochiy, A. V.; Florya, I. N.; Korneeva, Y. P.; Tarkhov, M. A.; Ryabchun, S. A.; Tretyakov, I. V.; Maslennikov, S. N.; Kaurova, N. S.; Chulkova, G. M.; Voronov, B. M. |
| Title |
Superconducting hot-electron bolometer as THz mixer, direct detector and IR single-photon counter |
Type |
Abstract |
| Year |
2010 |
Publication |
35th Int. Conf. Infrared, Millimeter, and Terahertz Waves |
Abbreviated Journal |
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| Volume |
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Issue |
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Pages |
1-1 |
| Keywords |
SSPD, SNSPD, HEB |
| Abstract |
We present a new generation of superconducting single-photon detectors (SSPDs) and hot-electron superconducting sensors with record characteristic for many terahertz and optical applications. |
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Edition |
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| ISSN |
2162-2027 |
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RPLAB @ sasha @ goltsman2010superconducting |
Serial |
1028 |
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| Author |
Marsili, F.; Bitauld, D.; Fiore, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Goltsman, G. |
| Title |
Superconducting parallel nanowire detector with photon number resolving functionality |
Type |
Journal Article |
| Year |
2009 |
Publication |
J. Modern Opt. |
Abbreviated Journal |
J. Modern Opt. |
| Volume |
56 |
Issue |
2-3 |
Pages |
334-344 |
| Keywords |
PNR; SSPD; SNSPD; thin superconducting films; photon number resolving detector; multiplication noise; telecom wavelength; NbN |
| Abstract |
We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise. |
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Edition |
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| ISSN |
0950-0340 |
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no |
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RPLAB @ gujma @ |
Serial |
701 |
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| Author |
Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
| Title |
GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits |
Type |
Journal Article |
| Year |
2003 |
Publication |
Microelectronic Engineering |
Abbreviated Journal |
Microelectronic Engineering |
| Volume |
69 |
Issue |
2-4 |
Pages |
274-278 |
| Keywords |
NbN SSPD, SNSPD, applications |
| Abstract |
We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics. |
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Edition |
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0167-9317 |
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no |
| Call Number |
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Serial |
1511 |
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| Author |
Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, Roman |
| Title |
Ultrafast NBN hot-electron single-photon detectors for electronic applications |
Type |
Abstract |
| Year |
2002 |
Publication |
Abstracts 8-th IUMRS-ICEM |
Abbreviated Journal |
Abstracts 8-th IUMRS-ICEM |
| Volume |
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Issue |
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Pages |
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| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We present a new, simple to manufacture, single-photon detector (SPD), which can work from ultraviolet to near-infrared wavelengths of optical radiation and combines high speed of operation, high quantum efficiency (QE), and very low dark counts. The devices are superconducting and operate at temperature below 5 K. The physics of operation of our SPD is based on formation of a photon-induced resistive hotspot and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconductor. |
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Conference |
8th IUMRS International Conference on Electronic Materials |
| Notes |
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no |
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Serial |
1532 |
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