|
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field |
1977 |
Sov. Phys. JETP |
45 |
555-565 |
|
|
Karasik, B. S.; Il'in, K. S.; Ptitsina, N. G.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen', E. V.; Krasnosvobodtsev, S. I. |
Electron-phonon scattering rate in impure NbC films |
1998 |
NASA/ADS |
|
Y35.08 |
|
|
Zorin, M.; Milostnaya, I.; Gol'tsman, G. N.; Gershenzon, E. M. |
Fast NbN superconducting switch controlled by optical radiation |
1997 |
IEEE Trans. Appl. Supercond. |
7 |
3734-3737 |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
|
|
Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
1997 |
Phys. Rev. B |
56 |
10089-10096 |
|