| |
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
|
Galeazzi, Massimiliano |
Fundamental noise processes in TES devices |
2011 |
IEEE Trans. Appl. Supercond. |
21 |
267-271 |
|
|
|
Stellari, Franco; Song, Peilin |
Testing of ultra low voltage CMOS microprocessors using the superconducting single-photon detector (SSPD) |
2005 |
Proc. 12th IPFA |
|
2 |
|
|
|
Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
Silicon room temperature IR detectors coated with Ag2S quantum dots |
2019 |
Proc. IWQO |
|
369-371 |
|
|
|
Steudle, Gesine A.; Schietinger, Stefan; Höckel, David; Dorenbos, Sander N.; Zadeh, Iman E.; Zwiller, Valery; Benson, Oliver |
Measuring the quantum nature of light with a single source and a single detector |
2012 |
Phys. Rev. A |
86 |
053814 |
|
|
|
Prober, D. E. |
Superconducting terahertz mixer using a transition-edge microbolometer |
1993 |
Appl. Phys. Lett. |
62 |
2119-2121 |
|
|
|
Kooi, Jacob Willem |
Advanced receivers for submillimeter and far infrared astronomy |
2008 |
University of Groningen |
|
|
|
|
|
Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. |
Population of excited-states of small admixtures in germanium |
1978 |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
42 |
1154-1159 |
|
|
|
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
Carrier lifetime in excited states of shallow impurities in germanium |
1977 |
JETP Lett. |
25 |
539-543 |
|
|
|
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
Investigation of population and ionization of donor excited states in Ge |
1976 |
Physics of Semiconductors |
|
631-634 |
|
|
|
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Investigation of excited donor states in GaAs |
1974 |
Sov. Phys. Semicond. |
7 |
1248-1250 |
|
