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Meledin, Denis; Pavolotsky, Alexey; Desmaris, Vincent.; Lapkin, Igor; Risacher, Christophe; Perez, Victor; Henke, Douglas; Nystrom, Olle; Sundin, Erik; Dochev, Dimitar; Pantaleev, Miroslav; Fredrixon, Mathias; Strandberg, Magnus; Voronov, Boris; Goltsman, Gregory; Belitsky, Victor |
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Title |
A 1.3-THz balanced waveguide HEB mixer for the APEX telescope |
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Journal Article |
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Year |
2009 |
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IEEE Trans. Microw. Theory Techn. |
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57 |
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1 |
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89-98 |
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HEB, mixer, waveguide, balanced, NbN |
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In this paper, we report about the development, fabrication, and characterization of a balanced waveguide hot electron bolometer (HEB) receiver for the Atacama Pathfinder EXperiment telescope covering the frequency band of 1.25–1.39 THz. The receiver uses a quadrature balanced scheme and two HEB mixers, fabricated from 4- to 5-nm-thick NbN film deposited on crystalline quartz substrate with an MgO buffer layer in between. We employed a novel micromachining method to produce all-metal waveguide parts at submicrometer accuracy (the main-mode waveguide dimensions are 90×180 μm). We present details on the mixer design and measurement results, including receiver noise performance, stability and “first-light†at the telescope site. The receiver yields a double-sideband noise temperature averaged over the RF band below 1200 K, and outstanding stability with a spectroscopic Allan time more than 200 s. |
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0018-9480 |
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RPLAB @ lobanovyury @ |
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554 |
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Author |
Cao, Aiqin; Jiang, L.; Chen, S.H.; Antipov, S.V.; Shi, S.C. |
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Title |
IF gain bandwidth of a quasi-optical NbN superconducting HEB mixer |
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Conference Article |
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2007 |
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Proc. International conference on microwave and millimeter wave technology |
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Proc. ICMMT |
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1-3 |
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HEB, mixer, gain bandwidth |
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In this paper, the intermediate frequency (IF) gain bandwidth of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer is investigated at 500 GHz with an IF system incorporating with a frequency down-converting scheme which is able to sweep the IF signal in a frequency range of 0.3-4 GHz. The IF gain bandwidth of the device is measured to be 1.5 GHz when it is biased at a voltage of the minimum noise temperature, and becomes larger when the bias voltage increases. |
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Builin |
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RPLAB @ lobanovyury @ |
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575 |
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Author |
Cherednichenko, S.; Drakinskiy, V. |
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Title |
Low noise hot-electron bolometer mixers for terahertz frequencies |
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Journal Article |
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2008 |
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J. Low Temp. Phys. |
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J. Low Temp. Phys. |
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151 |
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1-2 |
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575-579 |
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HEB, mixer, gain bandwidth, MgB2 |
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Hot-electron bolometer (HEB) mixers are used in many low noise heterodyne radio astronomical receivers. Their noise temperature is at the level of 10–15 times the quantum limit. However, their gain bandwidth is a serious limiting factor. Here we review the state of the art of the HEB mixers gain bandwidth for different materials and substrates. We compare the gain bandwidth of HEB mixers made on bulk substrates and thin membranes. Finally, results for MgB2 thin films for broadband HEB mixers are discussed. |
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0022-2291 |
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RPLAB @ lobanovyury @ |
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553 |
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Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Lecomte, B.; Dauplay, F.; Krieg, J. M.; Delorme, Y.; Feret, A.; Hübers, H. W.; Semenov, A. D.; Gol'tsman, G. N. |
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Title |
2.5 THz multipixel heterodyne receiver based on NbN HEB mixers |
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Conference Article |
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2006 |
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Proc. SPIE |
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Proc. SPIE |
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6275 |
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62750I (1 to 11) |
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HEB, mixer, membrane |
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A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation. |
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561 |
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Гольцман, Г.Н.; Лудков, Д.Н. |
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Title |
Сверхпроводниковые смесители на горячих электронах терагерцового диапазона и их применение в радиоастрономии |
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2003 |
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Изв. высших учебных заведений. Радиофизика |
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46 |
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8/9 |
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HEB, mixers |
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russian |
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RPLAB @ s @ |
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473 |
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