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Gao, J. R., Hiajenius, M., Yang, Z. Q., Klapwijk, T. M., Miao, W., Shi, S. C., et al. (2006). Direct comparison of the sensitivity of a spiral and a twin-slot antenna coupled HEB mixer at 1.6 THz. In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 59–62).
Abstract: To make a direct comparison of the sensitivity between a spiral and a twin slot antenna coupled HEB mixer, we designed both types of mixers and fabricated them in a single processing run and on the same wafer. Both mixers have similar dimensions of NbN bridges (1.5-2 pm x0.2 pm). At 1.6 THz we obtained a nearly identical receiver noise temperature from both mixers (only 5% difference), which is in a good agreement with the simulation based on semi analytical models for both antennas. In addition, by using a bandpass filter to reduce the direct detection effect and lowering the bath temperature to 2.4 K, we measured the lowest receiver noise temperature of 700 K at 1.63 THz using the twin-slot antenna mixer.
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Fedorov, G., Kardakova, A., Gayduchenko, I., Voronov, B. M., Finkel, M., Klapwijk, T. M., et al. (2014). Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation. In Proc. 25th Int. Symp. Space Terahertz Technol. (71).
Abstract: This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented.
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Goltsman, G., Korneev, A., Divochiy, A., Minaeva, O., Tarkhov, M., Kaurova, N., et al. (2009). Ultrafast superconducting single-photon detector. J. Modern Opt., 56(15), 1670–1680.
Abstract: The state-of-the-art of the NbN nanowire superconducting single-photon detector technology (SSPD) is presented. The SSPDs exhibit excellent performance at 2 K temperature: 30% quantum efficiency from visible to infrared, negligible dark count rate, single-photon sensitivity up to 5.6 µm. The recent achievements in the development of GHz counting rate devices with photon-number resolving capability is presented.
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Manova, N. N., Korneeva, Y. P., Korneev, A. A., Slysz, W., Voronov, B. M., & Gol'tsman, G. N. (2011). Superconducting NbN single-photon detector integrated with quarter-wave resonator. Tech. Phys. Lett., 37(5), 469–471.
Abstract: The spectral dependence of the quantum efficiency of superconducting NbN single-photon detectors integrated with quarter-wave resonators based on Si3N4, SiO2, and SiO layers has been studied.
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Lindgren, M., Currie, M., Zeng, W. - S., Sobolewski, R., Cherednichenko, S., Voronov, B., et al. (1998). Picosecond response of a superconducting hot-electron NbN photodetector. Appl. Supercond., 6(7-9), 423–428.
Abstract: The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W.
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Verevkin, A., Pearlman, A., Slysz, W., Zhang, J., Currie, M., Korneev, A., et al. (2004). Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications. J. Modern Opt., 51(9-10), 1447–1458.
Abstract: The paper reports progress on the design and development of niobium-nitride, superconducting single-photon detectors (SSPDs) for ultrafast counting of near-infrared photons for secure quantum communications. The SSPDs operate in the quantum detection mode, based on photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-width superconducting stripe. The devices are fabricated from 3.5 nm thick NbN films and kept at cryogenic (liquid helium) temperatures inside a cryostat. The detector experimental quantum efficiency in the photon-counting mode reaches above 20% in the visible radiation range and up to 10% at the 1.3–1.55 μn infrared range. The dark counts are below 0.01 per second. The measured real-time counting rate is above 2 GHz and is limited by readout electronics (the intrinsic response time is below 30 ps). The SSPD jitter is below 18 ps, and the best-measured value of the noise-equivalent power (NEP) is 2 × 10−18 W/Hz1/2. at 1.3 μm. In terms of photon-counting efficiency and speed, these NbN SSPDs significantly outperform semiconductor avalanche photodiodes and photomultipliers.
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Semenov, A. D., Gousev, Y. P., Renk, K. F., Voronov, B. M., Gol'tsman, G. N., Gershenzon, E. M., et al. (1997). Noise characteristics of a NbN hot-electron mixer at 2.5 THz. IEEE Trans. Appl. Supercond., 7(2), 3572–3575.
Abstract: The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation.
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Kawamura, J., Blundell, R., Tong, C. - Y. E., Gol'tsman, G., Gershenzon, E., Voronov, B., et al. (1997). Phonon-cooled NbN HEB mixers for submillimeter wavelengths. In Proc. 8th Int. Symp. Space Terahertz Technol. (pp. 23–28).
Abstract: The noise performance of receivers incorporating NbN phonon-cooled superconducting hot electron bolometric mixers is measured from 200 GHz to 900 GHz. The mixer elements are thin-film (thickness — 4 nm) NbN with —5 to 40 pm area fabricated on crystalline quartz sub- strates. The receiver noise temperature from 200 GHz to 900 GHz demonstrates no unexpected degradation with increasing frequency, being roughly TRx ,; 1-2 K The best receiver noise temperatures are 410 K (DSB) at 430 GHz, 483 K at 636 GHz, and 1150 K at 800 GHz.
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Svechnikov, S., Verevkin, A., Voronov, B., Menschikov, E., Gershenzon, E., & Gol'tsman, G. (1998). Quasioptical phonon-cooled NbN hot electron bolometer mixers at 0.5-1.1 THz. In Proc. 9th Int. Symp. Space Terahertz Technol. (pp. 45–51).
Abstract: The noise performance of a receiver incorporating spiral antenna coupled NbN phonon-cooled superconducting hot electron bolometric mixer is measured from 450 GHz to 1200 GHz. The mixer element is thin (thickness nm) NbN 1.5 pm wide and 0.2 i.um long film fabricated by lift-off e-beam lithography on high-resistive silicon substrate. The noise of the receiver temperature is 1000 K at 800-900 GHz, 1200 K at 950 GHz, and 1600 K at 1.08 THz. The required (absorbed) local-oscillator power is —20 nW.
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Cherednichenko, S., Kroug, M., Merkel, H., Kollberg, E., Loudkov, D., Smirnov, K., et al. (2001). Local oscillator power requirement and saturation effects in NbN HEB mixers. In C. Iit.u.t.e of T. Jet Propulsion Laboratory (Ed.), Proc. 12th Int. Symp. Space Terahertz Technol. (pp. 273–285). San Diego, CA, USA.
Abstract: The local oscillator power required for NbN hot-electron bolometric mixers (P LO ) was investigated with respect to mixer size, critical temperature and ambient temperature. P LO can be decreased by a factor of 10 as the mixer size decreases from 4×0.4 µm 2 to 0.6×0.13 µm 2 . For the smallest volume mixer the optimal local oscillator power was found to be 15 nW. We found that for such mixer no signal compression was observed up to an input signal of 2 nW which corresponds to an equivalent input load of 20,000 K. For a constant mixer volume, reduction of T c can decrease optimal local oscillator power at least by a factor of 2 without a deterioration of the receiver noise temperature. Bath temperature was found to have minor effect on the receiver characteristics.
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