| |
Author |
Title |
Year |
Publication |
DOI |
Links |
|
|
Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. |
Response of carbon nanotube film transistor to the THz radiation |
2018 |
EPJ Web Conf. |
10.1051/epjconf/201819505012 |
|
|
|
Goltsman, G. N. |
Submillimeter superconducting receivers for astronomy, atmospheric studies and other applications |
2006 |
31nd IRMW / 14th ICTE |
10.1109/Icimw.2006.368385 |
|
|
|
Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M. |
Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz |
2001 |
Physics of Vibrations |
|
|
|
|
Svechnikov, S. I.; Antipov, S. V.; Vakhtomin, Y. B.; Goltsman, G. N.; Gershenzon, E. M.; Cherednichenko, S. I.; Kroug, M.; Kollberg, E. |
Conversion and noise bandwidths of terahertz NbN hot-electron bolometer mixers |
2001 |
Physics of Vibrations |
|
|
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range |
1997 |
Proc. 4-th Int. Semicond. Device Research Symp. |
|
|
|
|
Aksaev, E. E.; Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Prospects for using high-temperature superconductors to create electron bolometers |
1989 |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
|
|
|
|
Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Kinetics of submillimeter impurity and exciton photoconduction in Ge |
1982 |
Optics and Spectroscopy |
|
|
|
|
Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I. |
Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors |
1978 |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
|
|
|
|
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
Investigation of population and ionization of donor excited states in Ge |
1976 |
Physics of Semiconductors |
|
|
|
|
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Investigation of excited donor states in GaAs |
1974 |
Sov. Phys. Semicond. |
|
|
