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Author Zhang, W.; Miao, W.; Zhong, J. Q.; Shi, S. C.; Hayton, D. J.; Vercruyssen, N.; Gao, J. R.; Goltsman, G. N. url  doi
openurl 
  Title Temperature dependence of the receiver noise temperature and IF bandwidth of superconducting hot electron bolometer mixers Type Journal Article
  Year 2014 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.  
  Volume 27 Issue 8 Pages 085013 (1 to 5)  
  Keywords NbN HEB mixers  
  Abstract (down) In this paper we study the temperature dependence of the receiver noise temperature and IF noise bandwidth of superconducting hot electron bolometer (HEB) mixers. Three superconducting NbN HEB devices of different transition temperatures (Tc) are measured at 0.85 THz and 1.4 THz at different bath temperatures (Tbath) between 4 K and 9 K. Measurement results demonstrate that the receiver noise temperature of superconducting NbN HEB devices is nearly constant for Tbath/Tc, less than 0.8, which is consistent with the simulation based on a distributed hot-spot model. In addition, the IF noise bandwidth appears independent of Tbath/Tc, indicating the dominance of phonon cooling in the investigated HEB devices.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-2048 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1358  
Permanent link to this record
 

 
Author Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. url  doi
openurl 
  Title Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages 012156  
  Keywords Shottky diode, THz, direct detector, multipixel camera  
  Abstract (down) In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1153  
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Author Shurakov, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Zilberley, T.; Prikhodko, A.; Voronov, B.; Vasil’evskii, I.; Goltsman, G. url  doi
openurl 
  Title Planar Schottky diode with a Γ-shaped anode suspended bridge Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages 012154  
  Keywords Schottky diode, GaAs, InP substrate  
  Abstract (down) In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1152  
Permanent link to this record
 

 
Author Tarkhov, M.; Morozov, D.; Mauskopf, P.; Seleznev, V.; Korneev, A.; Kaurova, N.; Rubtsova, I.; Minaeva, O.; Voronov, B.; Goltsman, G. url  openurl
  Title Single photon counting detector for THz radioastronomy Type Conference Article
  Year 2006 Publication Proc. 17th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 17th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 119-122  
  Keywords NbN SSPD, SNSPD  
  Abstract (down) In this paper we present the results of the research on the superconducting NbN-ultrathin-film single- photon detectors (SSPD) which are capable to detect single quanta in middle IR range. The detection mechanism is based on the hotspot formation in quasi-two-dimensional superconducting structures upon photon absorption. Spectral measurements showed that up to 5.7 gm wavelength (52 THz) the SSPD exhibits single-photon sensitivity. Reduction of operation temperature to 1.6 K allowed us to measure quantum efficiency of -4% at 60 THz. Although further decrease of the operation temperature far below 1 K does not lead to any significant increase of quantum efficiency. We expect that the improvement of the SSPD's performance at reduced operation temperature will make SSPD a practical detector with high characteristics for much lower THz frequencies as well.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1438  
Permanent link to this record
 

 
Author Goltsman, G. N. url  doi
openurl 
  Title Ultrafast nanowire superconducting single-photon detector with photon number resolving capability Type Conference Article
  Year 2009 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 7236 Issue Pages 72360D (1 to 11)  
  Keywords PNR NbN SSPD, SNSPD, superconducting single-photon detectors, photon number resolving detectors, ultrathin NbN films  
  Abstract (down) In this paper we present a review of the state-of-the-art superconducting single-photon detector (SSPD), its characterization and applications. We also present here the next step in the development of SSPD, i.e. photon-number resolving SSPD which simultaneously features GHz counting rate. We have demonstrated resolution up to 4 photons with quantum efficiency of 2.5% and 300 ps response pulse duration providing very short dead time.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Arakawa, Y.; Sasaki, M.; Sotobayashi, H.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1403  
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