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Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I. Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity 1996 Czech. J. Phys. 46 857-858 details   doi
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium 1986 Sov. Phys. JETP 64 889-897 details   url
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. Population and lifetime of excited states of shallow impurities in Ge 1979 Sov. Phys. JETP 49 355-362 details   url
Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions 2002 Mater. Sci. Forum 384-3 107-116 details   url
Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data 1996 J. of Communications Technology and Electronics 41 408-414 details   url
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