| Records |
| Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
| Title |
Hot-electron superconducting mixers |
Type |
Conference Article |
| Year |
1993 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
2104 |
Issue |
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Pages |
329-330 |
| Keywords |
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Abstract  |
The creation of low noise heterodyne receivers for frequencies above 1 THz is in the urgentneed for radio astronomy, laser spectroscopy, plasma diagnostic, etc. In this paper we discussthe nonlinear effect related to hot electrons in superconductors, and their potential use in lownoise submilimeter wave mixer. We also discuss results achieved so far as well as possible futuredevelopments. |
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
SPIE |
Place of Publication |
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Editor |
Birch, J.R.; Parker, T.J. |
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Summary Language |
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Expedition |
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Conference |
18th International Conference on Infrared and Millimeter Waves |
| Notes |
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Approved |
no |
| Call Number |
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Serial |
1654 |
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| Author |
Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E. |
| Title |
Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers |
Type |
Conference Article |
| Year |
1997 |
Publication |
Proc. 27th Eur. Microwave Conf. |
Abbreviated Journal |
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| Volume |
2 |
Issue |
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Pages |
972-977 |
| Keywords |
HEB mixer, fabrication process |
| Abstract |
The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. |
| Address |
Jerusalem, Israel |
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Thesis |
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| Publisher |
IEEE |
Place of Publication |
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Conference |
27th Eur. Microwave Conf. |
| Notes |
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Approved |
no |
| Call Number |
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Serial |
1075 |
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| Author |
Cherednichenko, S.; Yagoubov, P.; Il'In, K.; Gol'tsman, G.; Gershenzon, E. |
| Title |
Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates |
Type |
Conference Article |
| Year |
1997 |
Publication |
Proc. 8th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 8th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
245-257 |
| Keywords |
NbN HEB mixers, fabrication process |
| Abstract |
The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. |
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Approved |
no |
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Serial |
276 |
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| Author |
Korneev, A. A. |
| Title |
Superconducting NbN microstrip single-photon detectors |
Type |
Abstract |
| Year |
2021 |
Publication |
Proc. Quantum Optics and Photon Counting |
Abbreviated Journal |
Proc. Quantum Optics and Photon Counting |
| Volume |
11771 |
Issue |
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Pages |
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| Keywords |
NbN SSPD, SNSPD |
| Abstract |
Superconducting Single-Photon Detectors (SSPD) invented two decades ago have evolved to a mature technology and have become devices of choice in the advanced applications of quantum optics, such as quantum cryptography and optical quantum computing. In these applications SSPDs are coupled to single-mode fibers and feature almost unity detection efficiency, negligible dark counts, picosecond timing jitter and MHz photon count rate. Meanwhile, there are great many applications requiring coupling to multi-mode fibers or free space. ‘Classical’ SSPDs with 100-nm-wide superconducting strip and covering area of about 100 µm2 are not suitable for further scaling due to degradation of performance and low fabrication yield. Recently we have demonstrated single-photon counting in micron-wide superconducting bridges and strips. Here we present our approach to the realization of practical photon-counting detectors of large enough area to be efficiently coupled to multi-mode fibers or free space. The detector is either a meander or a spiral of 1-µm-wide strip covering an area of 50x50 µm2. Being operated at 1.7K temperature it demonstrates the saturated detection efficiency (i.e. limited by the absorption in the detector) up to 1550 nm wavelength, about 10 ns dead time and timing jitter in range 50-100 ps. |
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Thesis |
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SPIE |
Place of Publication |
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Editor |
Prochazka, I.; Štefaňák, M.; Sobolewski, R.; Gábris, A. |
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Conference |
Quantum Optics and Photon Counting; SPIE Optics + Optoelectronics, 2021, Online Only |
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Approved |
no |
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Serial |
1784 |
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| Author |
Korneev, A.; Korneeva, Y.; Florya, I.; Voronov, B.; Goltsman, G. |
| Title |
Spectral sensitivity of narrow strip NbN superconducting single-photon detector |
Type |
Conference Article |
| Year |
2011 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
8072 |
Issue |
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Pages |
80720G (1 to 9) |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
Superconducting single-photon detector (SSPD) is patterned from 4-nm-thick NbN film deposited on sapphire substrate as a 100-nm-wide strip. Due to its high detection efficiency, low dark counts, and picosecond timing jitter SSPD has become a competitor to the InGaAs avalanche photodiodes at 1550 nm and longer wavelengths. Although the SSPD is operated at liquid helium temperature its efficient single-mode fibre coupling enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. In our strive to increase the detection efficiency at 1550 nm and longer wavelengths we developed and fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm. To increase the voltage response of the device we utilized cascade switching mechanism: we connected 50-nm-wide and 10-μm-long strips in parallel covering the area of 10 μmx10 μm. Absorption of a photon breaks the superconductivity in a strip leading to the bias current redistribution between other strips followed their cascade switching. As the total current of all the strips about is 1 mA by the order of magnitude the response voltage of such an SSPD is several times higher compared to the traditional meander-shaped SSPDs. In middle infrared (about 3 μm wavelength) these devices have the detection efficiency several times higher compared to the traditional SSPDs. |
| Address |
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Thesis |
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| Publisher |
SPIE |
Place of Publication |
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Editor |
Fiurásek, J.; Prochazka, I. |
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Summary Language |
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Original Title |
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Edition |
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Expedition |
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Conference |
Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing III |
| Notes |
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Approved |
no |
| Call Number |
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Serial |
1387 |
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