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Kawamura, J.; Blundell, R.; Tong, C.‐yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B. |
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Title |
Performance of NbN lattice‐cooled hot‐electron bolometric mixers |
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1996 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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80 |
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7 |
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4232-4234 |
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Keywords |
NbN HEB mixers |
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Abstract  |
The heterodyne performance of lattice‐cooled hot‐electron bolometric mixers is measured at 200 GHz. Superconducting thin‐film niobium nitride strips with ∼5 nm thickness are used as waveguide mixer elements. A double‐sideband receiver noise temperature of 750 K at 244 GHz is measured at an intermediate frequency centered at 1.5 GHz with 500 MHz bandwidth and with 4.2 K device temperature. The instantaneous bandwidth for this mixer is 1.6 GHz. The local oscillator power required by the mixer is about 0.5 μW. The mixer is linear to within 1 dB up to an input power level 6 dB below the local oscillator power. A receiver incorporating a hot‐electron bolometric mixer was used to detect molecular line emission in a laboratory gascell. This experiment unambiguously confirms that the receiver noise temperature determined from Y‐factor measurements reflects the true heterodyne sensitivity. |
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0021-8979 |
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1607 |
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Gol’tsman, G. N. |
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The “Millimetron” project, a future space telescope mission |
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2007 |
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Proc. 18th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 18th Int. Symp. Space Terahertz Technol. |
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255 |
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Millimetron space observatory, VLBI |
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The goal of the Millimetron project is to develop a space observatory operating in the millimeter, sub-millimeter and infrared wavelength ranges using a 12-m actively cooled telescope in a single-dish mode and as an interferometer with the space-ground and space-space baselines (the later after the launch of the second identical space telescope). The Millimetron’s main reflector and other optics will be cooled down to 4K thus enabling astronomical observations with super high sensitivity in MM and subMM (down to nanoJansky level). Heterodyne observations in an interferometer mode at frequencies 0.1-1 THz will provide super high angular resolution. The main instruments, planned to be installed are wide-range imaging arrays, radiometers with spectrometers and polarimeters, VLBI heterodyne receivers, and Mikelson type interferometer devices. Wide-range MM and subMM imaging arrays and spectrometers will be based on a superconducting hot electron direct detectors with Andreev mirrors operating at 0.1 K. Such detectors are the best candidates to reach the noise equivalent power level of 10 -19 -10 -20 W/√Hz. Heterodyne receivers will be both SIS based superconducting integrated receiver with flux-flow oscillator as LO (0.1-0.9 THz range) and HEB based receivers using multiplied Gunn oscillator as LO for 1-2 THz range and quantum cascade lasers as LO for 2-5 THz range. For observations in middle IR region there will be installed large arrays of superconducting single photon detectors, providing imaging with very high dynamic range and ultimate sensitivity. |
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1422 |
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Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Karasik, B. S.; Lyulkin, A. M.; Semenov, A. D. |
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Fast-response superconducting electron bolometer |
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1989 |
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Pisma v Zhurnal Tekhnicheskoi Fiziki |
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Pisma v Zhurnal Tekhnicheskoi Fiziki |
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15 |
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3 |
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88-92 |
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Nb HEB |
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The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns. |
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Russian |
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1694 |
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Ovchinnikov, O. V.; Perepelitsa, A. S.; Smirnov, M. S.; Latyshev, A. N.; Grevtseva, I. G.; Vasiliev, R. B.; Goltsman, G. N.; Vitukhnovsky, A. G. |
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Title |
Luminescence of colloidal Ag2S/ZnS core/shell quantum dots capped with thioglycolic acid |
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Journal Article |
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2020 |
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J. Luminescence |
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J. Luminescence |
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220 |
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117008 (1 to 7) |
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Ag2S QD, quantum dots |
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The features of IR luminescence of colloidal AgS QDs passivated with thioglycolic acid (AgS/TGA) under the formation of AgS/ZnS/TGA core/shell QDs are considered. A 4.5-fold increase in the quantum yield of recombination IR luminescence within the band with a peak at 960 nm (1.29 eV), full width at half maximum of 250 nm (0.34 eV), and the Stokes shift with respect to the exciton absorption of 0.6 eV was found. The increase in the IR luminescence intensity of AgS/ZnS/TGA QDs is accompanied by an increase in the average luminescence lifetime from 2.9 ns to 14.3 ns, which is explained as “healing” of surface trap states during the formation of the ZnS shell. For the first time, the enhancement of the luminescence intensity photodegradation (hereinafter referred to as fatigue) was found during the formation of the AgS/ZnS/TGA core/shell QDs. The luminescence fatigue is irreversible. We conclude that the initial stage of photolysis of the AgS core QDs under laser irradiation plays a key role. Low-atomic photolytic clusters of silver formed on the AgS core QDs act as luminescence quenching centers and do not reveal structural transformations into AgS, provided that the clusters are not in contact with TGA. |
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0022-2313 |
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1267 |
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Kovaluyk, V.; Lazarenko, P.; Kozyukhin, S.; An, P.; Prokhodtsov, A.; Goltsman, G.; Sherchenkov, A. |
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Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures |
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2019 |
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Proc. Amorphous and Nanostructured Chalcogenides |
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Proc. Amorphous and Nanostructured Chalcogenides |
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47-48 |
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optical waveguides |
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The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm. |
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Technical University of Moldova |
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1281 |
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