Baek, B., Lita, A. E., Verma, V., & Nam, S. W. (2011). Superconducting a-WxSi1–x nanowire single-photon detector with saturated internal quantum efficiency from visible to 1850 nm. Appl. Phys. Lett., 98(25), 3.
Abstract: We have developed a single-photon detector based on superconducting amorphous tungsten–silicon alloy (a-WxSi1–x) nanowire. Our device made from a uniform a-WxSi1–x nanowire covers a practical detection area (16 μm×16 μm) and shows high sensitivity featuring a plateau of the internal quantum efficiencies, i.e., efficiencies of generating an electrical pulse per absorbed photon, over a broad wavelength and bias range. This material system for superconducting nanowire detector technology could overcome the limitations of the prevalent nanowire devices based on NbN and lead to more practical, ideal single-photon detectors having high efficiency, low noise, and high count rates.
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Marsili, F., Najafi, F., Herder, C., & Berggren, K. K. (2011). Electrothermal simulation of superconducting nanowire avalanche photodetectors. Appl. Phys. Lett., 98(9), 3.
Abstract: We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results.
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Gaggero, A., Nejad, S. J., Marsili, F., Mattioli, F., Leoni, R., Bitauld, D., et al. (2010). Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications. Appl. Phys. Lett., 97(15), 3.
Abstract: We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K.
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Siddiqi, I., & Prober, D. E. (2004). Nb–Au bilayer hot-electron bolometers for low-noise THz heterodyne detection. Appl. Phys. Lett., 84(8), 1404.
Abstract: The sensitivity of present Nb diffusion-cooled hot-electron bolometer (HEB) mixers is not quantum limited, and can be improved by reducing the superconducting transition temperature TC. Lowering TC reduces thermal fluctuations, resulting in a decrease of the mixer noise temperature TM. However, lower TC mixers have reduced dynamic range and saturate more easily due to background noise. We present 30 GHz microwave measurements on a bilayer HEB system, Nb–Au, in which TC can be tuned with Au layer thickness to obtain the maximum sensitivity for a given noise background. These measurements are intended as a guide for the optimization of THz mixers. Using a Nb–Au mixer with TC = 1.6 K, we obtain TM = 50 K with 2 nW of local oscillator (LO) power. Good mixer performance is observed over a wide range of LO power and bias voltage and such a device should not exhibit saturation in a THz receiver.
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Sprengers, J. P., Gaggero, A., Sahin, D., Jahanmirinejad, S., Frucci, G., Mattioli, F., et al. (2011). Waveguide superconducting single-photon detectors for integrated quantum photonic circuits. Appl. Phys. Lett., 99(18), 181110(1–3).
Abstract: The monolithic integration of single-photon sources, passive optical circuits, and single-photon detectors enables complex and scalable quantum photonic integrated circuits, for application in linear-optics quantum computing and quantum communications. Here, we demonstrate a key component of such a circuit, a waveguide single-photon detector. Our detectors, based on superconducting nanowires on GaAs ridge waveguides, provide high efficiency (~0%) at telecom wavelengths, high timing accuracy (~0 ps), and response time in the ns range and are fully compatible with the integration of single-photon sources, passive networks, and modulators.
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