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Author Чулкова, Г. М.; Корнеев, А. А.; Смирнов, К. В.; Окунев, О. В.
Title Энергетическая релаксация в примесных металлах, двумерном электронном газе в AlGaAs-GaAs, сверхпроводниковых пленках NbN и детекторы субмиллиметрового и ик излучения на их основе Type Book Whole
Year 2012 Publication Abbreviated Journal
Volume Issue Pages
Keywords 2DEG, AlGaAs/GaAs, NbN detectors
Abstract Монография посвящена обзору исследований влияния эффектов электронного беспорядка на электронное взаимодействие в металлах, сверхпроводниках, полупроводниках, а также в различных низкоразмерных структурах. Актуальность поднятых в монографии вопросов определяется интенсивным развитием нанотехнологий, созданием новых наноструктурированных материалов и уникальных наноэлементов для электроники и фотоники. Упругое электронное рассеяние на границах наноструктур качественно меняет взаимодействие электронов с фонолами, что, безусловно, должно учитываться при проектировании соответствующей элементной базы. Прикладная часть работы посвящена контролируемой модификации электронных процессов для оптимизации новых наносенсоров на основе электронного разогрева в сверхпроводниковых и полупроводниковых структурах. Монография предназначена для студентов старших курсов, аспирантов и начинающих следователей, работающих в области сверхпроводниковой наноэлектроники.
Address (down) Москва
Corporate Author Thesis
Publisher Прометей, МПГУ Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 978-5-4263-0118-4 Medium
Area Expedition Conference
Notes УДК: 537.311 Approved no
Call Number Serial 1818
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Author Sclafani, M.; Marksteiner, M.; Keir, F. M. L.; Divochiy, A.; Korneev, A.; Semenov, A.; Gol'tsman, G.; Arndt, M.
Title Sensitivity of a superconducting nanowire detector for single ions at low energy Type Journal Article
Year 2012 Publication Nanotechnol. Abbreviated Journal Nanotechnol.
Volume 23 Issue 6 Pages 065501 (1 to 5)
Keywords NbN SSPD, SNSPD, superconducting single ion detector, SSID, SNSID
Abstract We report on the characterization of a superconducting nanowire detector for ions at low kinetic energies. We measure the absolute single-particle detection efficiency eta and trace its increase with energy up to eta = 100%. We discuss the influence of noble gas adsorbates on the cryogenic surface and analyze their relevance for the detection of slow massive particles. We apply a recent model for the hot-spot formation to the incidence of atomic ions at energies between 0.2 and 1 keV. We suggest how the differences observed for photons and atoms or molecules can be related to the surface condition of the detector and we propose that the restoration of proper surface conditions may open a new avenue for SSPD-based optical spectroscopy on molecules and nanoparticles.
Address (down) Vienna Center for Quantum Science and Technology, Faculty of Physics, University of Vienna, Vienna, Austria
Corporate Author Thesis
Publisher Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484 ISBN Medium
Area Expedition Conference
Notes PMID:22248823 Approved no
Call Number Serial 1380
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Author Swetz, D. S.; Bennett, D. A.; Irwin, K. D.; Schmidt, D. R.; Ullom, J. N.
Title Current distribution and transition width in superconducting transition-edge sensors Type Journal Article
Year 2012 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 101 Issue Pages 242603
Keywords
Abstract Present models of the superconducting-to-normal transition in transition-edge sensors (TESs) do not describe the current distribution within a biased TES. This distribution is complicated by normal-metal features that are integral to TES design. We present a model with one free parameter that describes the evolution of the current distribution with bias. To probe the current distribution experimentally, we fabricated TES devices with different current return geometries. Devices where the current return geometry mirrors current flow within the device have sharper transitions, thus allowing for a direct test of the current-flow model.Measurements from these devices show that current meanders through a TES low in the resistivetransition but flows across the normal-metal features by 40% of the normal-state resistance. Comparison of transition sharpness between device designs reveals that self-induced magnetic fields play an important role in determining the width of the superconducting transition.
Address (down) TES, current distribution
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Recommended by Klapwijk Approved no
Call Number Serial 930
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Author Shurakov, Alexander; Tong, Edward; Blundell, Raymond; Gol'tsman, Gregory
Title Microwave stabilization of HEB mixer by a microchip controller Type Conference Article
Year 2012 Publication IEEE MTT-S international microwave symposium digest Abbreviated Journal
Volume Issue Pages 1-3
Keywords HEB mixer stability, microwave injection, Allan variance, Allan time
Abstract The stability of a Hot Electron Bolometer (HEB) mixer can be improved by the use of microwave injection. In this article we report a refinement of this approach. We introduce a microchip controller to facilitate the implementation of the stabilization scheme, and demonstrate that the feedback loop effectively suppresses drifts in the HEB bias current, leading to an improvement in the receiver stability. The measured Allan time of the mixer's IF output power is increased to > 10 s.
Address (down) Montreal, QC, Canada
Corporate Author Thesis
Publisher Place of Publication Editor
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 857
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Author Pernice, W. H. P.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X.
Title High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits Type Journal Article
Year 2012 Publication Nat. Commun. Abbreviated Journal Nat. Commun.
Volume 3 Issue Pages 1325 (1 to 10)
Keywords waveguide SSPD
Abstract Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics.
Address (down) Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2041-1723 ISBN Medium
Area Expedition Conference
Notes PMID:23271658; PMCID:PMC3535416 Approved no
Call Number Serial 1375
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Author Bulaevskii, L. N.; Graf, Matthias J.; Kogan, V. G.
Title Vortex-assisted photon counts and their magnetic field dependence in single-photon superconducting detectors Type Journal Article
Year 2012 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 85 Issue 1 Pages 9
Keywords SSPD; SNSPD; single-vortex crossing; normal-state belt
Abstract We argue that photon counts in a superconducting nanowire single-photon detector (SNSPD) are caused by the transition from a current-biased metastable superconducting state to the normal state. Such a transition is triggered by vortices crossing the thin and narrow superconducting strip from one edge to another due to the Lorentz force. Detector counts in SNSPDs may be caused by three processes: (a) a single incident photon with sufficient energy to break enough Cooper pairs to create a normal-state belt across the entire width of the strip (direct photon count), (b) thermally induced single-vortex crossing in the absence of photons (dark count), which at high-bias currents releases the energy sufficient to trigger the transition to the normal state in a belt across the whole width of the strip, and (c) a single incident photon of insufficient energy to create a normal-state belt but initiating a subsequent single-vortex crossing, which provides the rest of the energy needed to create the normal-state belt (vortex-assisted single-photon count). We derive the current dependence of the rate of vortex-assisted photon counts. The resulting photon count rate has a plateau at high currents close to the critical current and drops as a power law with high exponent at lower currents. While the magnetic field perpendicular to the film plane does not affect the formation of hot spots by photons, it causes the rate of vortex crossings (with or without photons) to increase. We show that by applying a magnetic field one may characterize the energy barrier for vortex crossings and identify the origin of dark counts and vortex-assisted photon counts.
Address (down)
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ gujma @ Serial 733
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Author Knee, George C.; Simmons, Stephanie; Gauger, Erik M.; Morton, John J. L.; Riemann, Helge; Abrosimov, Nikolai V.; Becker, Peter; Pohl, Hans-Joachim; Itoh, Kohei M.; Thewalt, Mike L. W.; Briggs, G. Andrew D.; Benjamin, Simon C.
Title Violation of a Leggett–Garg inequality with ideal non-invasive measurements Type Journal Article
Year 2012 Publication Nature Communications Abbreviated Journal Nat. Comm.
Volume 3 Issue 606 Pages 6
Keywords fromIPMRAS
Abstract The quantum superposition principle states that an entity can exist in two different states simultaneously, counter to our 'classical' intuition. Is it possible to understand a given system's behaviour without such a concept? A test designed by Leggett and Garg can rule out this possibility. The test, originally intended for macroscopic objects, has been implemented in various systems. However to date no experiment has employed the 'ideal negative result' measurements that are required for the most robust test. Here we introduce a general protocol for these special measurements using an ancillary system, which acts as a local measuring device but which need not be perfectly prepared. We report an experimental realization using spin-bearing phosphorus impurities in silicon. The results demonstrate the necessity of a non-classical picture for this class of microscopic system. Our procedure can be applied to systems of any size, whether individually controlled or in a spatial ensemble.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ gujma @ Serial 767
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Author Smith, Devin H.; Gillett, Geoff; de Almeida, Marcelo P.; Branciard, Cyril; Fedrizzi, Alessandro; Weinhold, Till J.; Lita, Adriana; Calkins, Brice; Gerrits, Thomas; Wiseman, Howard M.; Nam, Sae Woo; White, Andrew G.
Title Conclusive quantum steering with superconducting transition-edge sensors Type Journal Article
Year 2012 Publication Nature Communications Abbreviated Journal Nat. Comm.
Volume 3 Issue 625 Pages 6
Keywords fromIPMRAS
Abstract Quantum steering allows two parties to verify shared entanglement even if one measurement device is untrusted. A conclusive demonstration of steering through the violation of a steering inequality is of considerable fundamental interest and opens up applications in quantum communication. To date, all experimental tests with single-photon states have relied on post selection, allowing untrusted devices to cheat by hiding unfavourable events in losses. Here we close this 'detection loophole' by combining a highly efficient source of entangled photon pairs with superconducting transition-edge sensors. We achieve an unprecedented ~62% conditional detection efficiency of entangled photons and violate a steering inequality with the minimal number of measurement settings by 48 s.d.s. Our results provide a clear path to practical applications of steering and to a photonic loophole-free Bell test.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ gujma @ Serial 768
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Author Ghali, Mohsen; Ohtani1, Keita; Ohno, Yuzo; Ohno, Hideo
Title Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field Type Journal Article
Year 2012 Publication Nature Communications Abbreviated Journal Nat. Comm.
Volume 3 Issue 661 Pages 6
Keywords fromIPMRAS
Abstract Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton-exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72 ± 0.05.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ gujma @ Serial 769
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Author Grotz, Bernhard; Hauf, Moritz V.; Dankerl, Markus; Naydenov, Boris; Pezzagna, Sébastien; Meijer, Jan; Jelezko, Fedor; Wrachtrup, Jörg; Stutzmann, Martin; Reinhard, Friedemann; Garrido, Jose A.
Title Charge state manipulation of qubits in diamond Type Journal Article
Year 2012 Publication Nature Communications Abbreviated Journal Nat. Comm.
Volume 3 Issue 729 Pages 6
Keywords fromIPMRAS
Abstract The nitrogen-vacancy (NV) centre in diamond is a promising candidate for a solid-state qubit. However, its charge state is known to be unstable, discharging from the qubit state NV- into the neutral state NV0 under various circumstances. Here we demonstrate that the charge state can be controlled by an electrolytic gate electrode. This way, single centres can be switched from an unknown non-fluorescent state into the neutral charge state NV0, and the population of an ensemble of centres can be shifted from NV0 to NV-. Numerical simulations confirm the manipulation of the charge state to be induced by the gate-controlled shift of the Fermi level at the diamond surface. This result opens the way to a dynamic control of transitions between charge states and to explore hitherto inaccessible states, such as NV+.
Address (down)
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ gujma @ Serial 770
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