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Baselmans, J. J. A., Baryshev, A., Reker, S. F., Hajenius, M., Gao, J. R., Klapwijk, T. M., et al. (2005). Direct detection effect in small volume hot electron bolometer mixers. Appl. Phys. Lett., 86(16), 163503 (1 to 3).
Abstract: We measure the direct detection effect in a small volume (0.15μm×1μm×3.5nm)(0.15μm×1μm×3.5nm) quasioptical NbN phonon cooled hot electronbolometermixer at 1.6THz1.6THz. We find that the small signal sensitivity of the receiver is underestimated by 35% due to the direct detection effect and that the optimal operating point is shifted to higher bias voltages when using calibration loads of 300K300K and 77K77K. Using a 200GHz200GHzbandpass filter at 4.2K4.2K the direct detection effect virtually disappears. This has important implications for the calibration procedure of these receivers in real telescope systems.
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Maslennikov, S. N., Finkel, M. I., Antipov, S. V., Polyakov, S. L., Zhang, W., Ozhegov, R., et al. (2006). Spiral antenna coupled and directly coupled NbN HEB mixers in the frequency range from 1 to 70 THz. In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 177–179). Paris, France.
Abstract: We investigate both antenna coupled and directly coupled HEB mixers at several LO frequencies within the range of 2.5 THz to 70 THz. H20 (2.5+10.7 THz), and CO2 (30 THz) gas discharge lasers are used as the local oscillators. The noise temperature of antenna coupled mixers is measured at LO frequencies of 2.5 THz, 3.8 THz, and 30 THz. The results for both antenna coupled and directly coupled mixer types are compared. The devices with in—plane dimensions of 5x5 ,um 2 are pumped by LO radiation at 10.7 THz. The directly coupled HEB demonstrates nearly flat dependence of responsivity on frequency in the range of 25+64 THz.
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Maslennikov, S., Antipov, S., Shishkov, A., Svechnikov, S., Voronov, B., Smirnov, K., et al. (2002). NbN HEB mixer noise temperature measurements with hot/cold load mounted inside the helium cryostat at 300 GHz. In Proc. Int. Student Seminar on Microwave Appl. of Novel Physical Phenomena supported by IEEE. St.-Petersburg: LETI.
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Semenov, A. D., Hübers, H. - W., Richter, H., Birk, M., Krocka, M., Mair, U., et al. (2003). Superconducting hot-electron bolometer mixer for terahertz heterodyne receivers. IEEE Trans. Appl. Supercond., 13(2), 168–171.
Abstract: We present recent results showing the development of superconducting NbN hot-electron bolometer mixer for German receiver for astronomy at terahertz frequencies and terahertz limb sounder. The mixer is incorporated into a planar feed antenna, which has either logarithmic spiral or double-slot configuration, and backed on a silicon lens. The hybrid antenna had almost frequency independent and symmetric radiation pattern slightly broader than expected for a diffraction limited antenna. At 2.5 THz the best 2200 K double side-band receiver noise temperature was achieved across a 1 GHz intermediate frequency bandwidth centred at 1.5 GHz. For this operation regime, a receiver conversion efficiency of -17 dB was directly measured and the loss budget was evaluated. The mixer response was linear at load temperatures smaller than 400 K. Implementation of the MgO buffer layer on Si resulted in an increased 5.2 GHz gain bandwidth. The receiver was tested in the laboratory environment by measuring a methanol emission line at 2.5 THz.
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Vachtomin, Y. B., Antipov, S. V., Maslennikov, S. N., Smirnov, K. V., Polyakov, S. L., Kaurova, N. S., et al. (2004). Noise temperature measurements of NbN phonon-cooled hot electron bolometer mixer at 2.5 and 3.8 THz. In Proc. 15th Int. Symp. Space Terahertz Technol. (pp. 236–241). Northampton, Massachusetts, USA.
Abstract: We present the results of noise temperature measurements of NbN phonon-cooled HEB mixers based on a 3.5 nm NbN film deposited on a high-resistivity Si substrate with a 200 nm – thick MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 µm x 0.2 µm active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. We also present the results of direct detection contribution to the measured Y-factor and of a possible error of noise temperature calculation. This error was more than 8% for the mixer with in-plane dimensions of 2.4 x 0.16 µm 2 at the optimal noise temperature point. The use of a mesh filter enabled us to avoid the effect of direct detection and decrease optical losses by 0.5 dB. The paper is concluded by the investigation results of the mixer polarization response. It was shown that the polarization can differ from the circular one at 3.8 THz by more than 2 dB.
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Maslennikov, S., Vachtomin, Y., Antipov, S., Smirnov, K., Kaurova, N., Grishina, E., et al. (2004). NbN HEB mixers for frequencies of 2.5 and 3.8 THz. In Proc. Tenth All-Russian sceintific conference of student-physicists and young sceintists (VNKSF-10). Moscow.
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Cao, A., Jiang, L., Chen, S. H., Antipov, S. V., & Shi, S. C. (2007). IF gain bandwidth of a quasi-optical NbN superconducting HEB mixer. In Proc. International conference on microwave and millimeter wave technology (pp. 1–3). Builin.
Abstract: In this paper, the intermediate frequency (IF) gain bandwidth of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer is investigated at 500 GHz with an IF system incorporating with a frequency down-converting scheme which is able to sweep the IF signal in a frequency range of 0.3-4 GHz. The IF gain bandwidth of the device is measured to be 1.5 GHz when it is biased at a voltage of the minimum noise temperature, and becomes larger when the bias voltage increases.
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Antipov, S., Trifonov, A., Krause, S., Meledin, D., Desmaris, V., Belitsky, V., et al. (2017). Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency. In Proc. 28th Int. Symp. Space Terahertz Technol. (pp. 147–148).
Abstract: In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth.
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Krause, S., Mityashkin, V., Antipov, S., Gol'tsman, G., Meledin, D., Desmaris, V., et al. (2016). Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method. In Proc. 27th Int. Symp. Space Terahertz Technol. (pp. 30–32).
Abstract: In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination.
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Antipov, S., Trifonov, A., Krause, S., Meledin, D., Kaurova, N., Rudzinski, M., et al. (2019). Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer. Supercond. Sci. Technol., 32(7), 075003.
Abstract: We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.
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