| Records |
| Author |
Kooi, Jacob Willem |
| Title |
Advanced receivers for submillimeter and far infrared astronomy |
Type |
Book Whole |
| Year |
2008 |
Publication |
University of Groningen |
Abbreviated Journal |
RUG |
| Volume |
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Issue |
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Pages |
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| Keywords |
HEB, SIS, TES, NEP, noise temperature, IF bandwidth, waveguide, impedance, conversion gain, FTS, integrated array, stability, Allan variance, multi-layer antireflection coating |
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Thesis |
Doctoral thesis |
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Series Issue |
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Edition |
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| ISSN |
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ISBN |
978-90-367-3653-4 |
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no |
| Call Number |
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Serial |
881 |
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| Author |
Ovchinnikov, Yu. N.; Varlamov, A. A. |
| Title |
Fluctuation-dissipative phenomena in a narrow superconducting channel carrying current below critical |
Type |
Journal Article |
| Year |
2009 |
Publication |
arXiv |
Abbreviated Journal |
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| Volume |
0910.2659v1 |
Issue |
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Pages |
1-4 |
| Keywords |
superconducting nanowire, resistance calculation |
| Abstract |
The theory of current transport in a narrow superconducting channel accounting for thermal fluctuations is developed. These fluctuations result in the appearance of small but finite dissipation in the sample. The value of corresponding voltage is found as the function of temperature (close to transition temperature) and arbitrary bias current. It is demonstrated that the value of the activation energy (exponential factor in the Arrenius law) when current approaches to the critical one is proportional to (1-J/Jc)^(5/4). This result is in concordance with the one for the affine phenomenon of the Josephson current decay due to the thermal phase fluctuations, where the activation energy proportional (1-J/J_c)^(3/2)(the difference in the exponents is related to the additional current dependence of the order parameter). Found dependence of the activation energy on current explains the enormous discrepancy between the theoretically predicted before and the experimentally observed broadening of the resistive transition. |
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| Notes |
arXiv:0910.2659v1; 4 pages, 3 figures |
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no |
| Call Number |
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Serial |
931 |
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| Author |
Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E. |
| Title |
Electron heating in metallic resistors at sub-Kelvin temperature |
Type |
Journal Article |
| Year |
2007 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
76 |
Issue |
|
Pages |
165426(1-9) |
| Keywords |
electron heating in resistor, HEB distributed model, HEB model, hot electrons |
| Abstract |
In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic diffusion to and from the connecting wires and electron-phonon coupling. The goal of this paper is to present a general solution of the problem in a form that can easily be used in practical situations. As an application, we compute two quantities that depend on the electronic temperature profile: the second and the third cumulant of the current noise at zero frequency, as a function of the voltage across the resistor. We also consider time-dependent heating, an issue relevant for experiments in which current pulses are used, for instance, in time-resolved calorimetry experiments. |
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| Notes |
Recommended by Klapwijk as example for writing the article on the HEB model. |
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no |
| Call Number |
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Serial |
936 |
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| Author |
Ozhegov, R. V.; Gorshkov, K. N.; Vachtomin, Y. B.; Smirnov, K. V.; Finkel, M. I.; Goltsman, G. N.; Kiselev, O. S.; Kinev, N. V.; Filippenko, L. V.; Koshelets, V. P. |
| Title |
Terahertz imaging system based on superconducting heterodyne integrated receiver |
Type |
Conference Article |
| Year |
2014 |
Publication |
Proc. THz and Security Applications |
Abbreviated Journal |
Proc. THz and Security Applications |
| Volume |
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Issue |
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Pages |
113-125 |
| Keywords |
SIS mixer, SIR, THz imaging |
| Abstract |
The development of terahertz imaging instruments for security systems is on the cutting edge of terahertz technology. We are developing a THz imaging system based on a superconducting integrated receiver (SIR). An SIR is a new type of heterodyne receiver based on an SIS mixer integrated with a flux-flow oscillator (FFO) and a harmonic mixer which is used for phase-locking the FFO. Employing an SIR in an imaging system means building an entirely new instrument with many advantages compared to traditional systems.
In this project we propose a prototype THz imaging system using an 1 pixel SIR and 2D scanner. At a local oscillator frequency of 500 GHz the best noise equivalent temperature difference (NETD) of the SIR is 10 mK at an integration time of 1 s and a detection bandwidth of 4 GHz. The scanner consists of two rotating flat mirrors placed in front of the antenna consisting of a spherical primary reflector and an aspherical secondary reflector. The diameter of the primary reflector is 0.3 m. The operating frequency of the imaging system is 600 GHz, the frame rate is 0.1 FPS, the scanning area is 0.5 × 0.5 m2, the image resolution is 50 × 50 pixels, the distance from an object to the scanner was 3 m. We have obtained THz images with a spatial resolution of 8 mm and a NETD of less than 2 K. |
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| Publisher |
Springer Netherlands |
Place of Publication |
Dordrecht |
Editor |
Corsi, C.; Sizov, F. |
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Edition |
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| ISSN |
978-94-017-8828-1 |
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no |
| Call Number |
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Serial |
1368 |
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| Author |
Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
| Title |
Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
Type |
Journal Article |
| Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
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| Volume |
9 |
Issue |
2 |
Pages |
3216-3219 |
| Keywords |
RSFQ, NbN, SIS |
| Abstract |
A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
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Approved |
no |
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Serial |
1081 |
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| Author |
Samsonova, Alena; Zolotov, Philipp; Baeva, Elmira; Lomakin, Andrey; Titova, Nadezhda; Kardakova, Anna; Goltsman, Gregory |
| Title |
Signatures of surface magnetic disorder in thin niobium films |
Type |
Journal Article |
| Year |
2021 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
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| Volume |
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Issue |
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Pages |
1-1 |
| Keywords |
Temperature measurement, Temperature dependence, Superconducting magnets, Superconducting transition temperature, Substrates, Resistance, Scattering |
| Abstract |
We present our studies on the evolution of the normal and superconducting properties with thickness of thin Nb films with a low level of non-magnetic disorder (kFl 150 for the thickest film in the set). The analysis of the superconducting behavior points to the presence of magnetic moments, hidden in the native oxide on the surface of Nb films. Using the Abrikosov-Gorkov theory, we obtain the density of surface magnetic moments of 1013 cm-2, which is in agreement with the previously reported data for Nb films. |
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Edition |
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| ISSN |
1051-8223 |
ISBN |
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Approved |
no |
| Call Number |
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Serial |
1162 |
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| Author |
Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. |
| Title |
Relaxation of the resistive superconducting state in boron-doped diamond films |
Type |
Journal Article |
| Year |
2016 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
93 |
Issue |
6 |
Pages |
064506 |
| Keywords |
boron-doped diamond films, resistive superconducting state, relaxation time |
| Abstract |
We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc. |
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Edition |
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| ISSN |
2469-9950 |
ISBN |
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Approved |
no |
| Call Number |
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Serial |
1167 |
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| Author |
Baksheeva, K.; Vdovydchenko, A.; Gorshkov, K.; Ozhegov, R.; Kinev, N.; Koshelets, V.; Goltsman, G. |
| Title |
Study of human skin radiation in the terahertz frequency range |
Type |
Conference Article |
| Year |
2019 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1410 |
Issue |
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Pages |
012076 (1 to 5) |
| Keywords |
SIS mixer, SIR, applications, medicine, sympathetic nervous system, SNS |
| Abstract |
The radiation of human skin in the terahertz frequency range under the influence of mental stresses has been studied in the current work. An experimental setup for observation of changes in human skin radiation, which occur under the influence of psychological stresses, by means of a superconducting integrated receiver has been developed. More than 30 volunteers participate in these studies, which allows us to verify presence of correlation between the signals from the superconducting integrated terahertz receiver and other sensors that monitor human mental stress. |
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Edition |
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| ISSN |
1742-6588 |
ISBN |
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no |
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Serial |
1272 |
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| Author |
Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
| Title |
Graphene-layer and graphene-nanoribbon FETs as THz detectors |
Type |
Conference Article |
| Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1124 |
Issue |
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Pages |
051054 |
| Keywords |
field-effect transistor, FET, monolayer graphene, graphene nanoribbons |
| Abstract |
We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry. |
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| ISSN |
1742-6588 |
ISBN |
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Approved |
no |
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Serial |
1300 |
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| Author |
Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. |
| Title |
Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes |
Type |
Conference Article |
| Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1124 |
Issue |
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Pages |
051050 (1 to 5) |
| Keywords |
field-effect transistor, FET, carbon nanotube, CNT |
| Abstract |
In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response. |
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1742-6588 |
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no |
| Call Number |
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Serial |
1301 |
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