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Zolotov, P.; Divochiy, A.; Korneeva, Yu.; Vakhtomin, Yu.; Seleznev, V.; Smirnov, K. |
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Title |
Capability investigation of superconducting single-photon detectors, optimized for 800–1200 nm spectrum range |
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Miscellaneous |
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2015 |
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3th ICQT |
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3th ICQT |
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SSPD, SNSPD |
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Hotel Ukraina (Radisson), Moscow |
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1253 |
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Yang, Y.; Fedorov, G.; Shafranjuk, S. E.; Klapwijk, T. M.; Cooper, B. K.; Lewis, R. M.; Lobb, C. J.; Barbara, P. |
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Title |
Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes |
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Journal Article |
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Year |
2015 |
Publication |
Nano Lett. |
Abbreviated Journal |
Nano Lett. |
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Volume |
15 |
Issue |
12 |
Pages |
7859-7866 |
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Keywords |
carbon nanotubes, CNT, tunable superconductivity, van Hove singularities |
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Abstract |
Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube. |
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Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States |
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1530-6984 |
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PMID:26506109; Suuplementary info (attached to pdf) DOI: 10.1021/acs.nanolett.5b02564 |
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1782 |
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Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. |
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Title |
Helicity-sensitive plasmonic terahertz interferometer |
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Journal Article |
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Year |
2020 |
Publication |
Nano Lett. |
Abbreviated Journal |
Nano Lett. |
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Volume |
20 |
Issue |
10 |
Pages |
7296-7303 |
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Keywords |
graphene, plasmonic interferometer, radiation helicity, terahertz radiation |
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Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials. |
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CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland |
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1530-6984 |
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PMID:32903004 |
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1781 |
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Shcheslavskiy, V.; Morozov, P.; Divochiy, A.; Vakhtomin, Y.; Smirnov, K.; Becker, W. |
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Erratum: “Ultrafast time measurements by time-correlated single photon counting coupled with superconducting single photon detector” [Rev. Sci. Instrum. 87, 053117 (2016)] |
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Miscellaneous |
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2016 |
Publication |
Rev. Sci. Instrum. |
Abbreviated Journal |
Rev. Sci. Instrum. |
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Volume |
87 |
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6 |
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069901 |
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Keywords |
SSPD, SNSPD, TCSPC, jitter |
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In the original paper1the Ref. 10 should be M. Sanzaro, N. Calandri, A. Ruggeri, C. Scarcella, G. Boso, M. Buttafava, and A. Tosi, Proc. SPIE9370, 93701T (2015). |
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Becker & Hickl GmbH, Nahmitzer Damm 30, Berlin 12277, Germany |
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0034-6748 |
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PMID:27370512 |
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1810 |
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Author |
Гершензон, Е. М. |
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Воздействие электромагнитного излучения на сверхпроводящую плёнку ниобия в резистивном состоянии |
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Conference Article |
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1982 |
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Тезисы докладов 22 Всесоюзной конференции по физике низких температур |
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79-80 |
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russian |
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231 |
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Karasik, B. S.; Elantiev, A. I. |
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Analysis of the noise performance of a hot-electron superconducting bolometer mixer |
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Conference Article |
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1995 |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
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229-246 |
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HEB mixers |
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A theoretical analysis for the noise temperature of hot–electron superconducting mixer has been presented. Thecontributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteriaensuring low noise performance of the mixer has been stated and a simple analytic expression for the noisetemperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivitydoes not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noisemechanisms has been estimated to be as low as 40–90 K for a mixer device made from Nb or NbN thin film.Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperaturerelaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidthis of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been madewhen a distinction between the impedance measured at high intermediate frequency (larger than the mixerbandwidth) and the mixer ohmic resistance has been taken into account.Recently obtained experimental data on Nb and NbNbolometer mixer devices are viewed in connection with thetheoretical predictions.The noise temperature limit has also been specified for the mixer device where an outdiffusion coolingmechanism rather than the electron–phonon energy relaxation determines the mixer bandwidth. A consideration ofthe noise performance of a bolometer mixer made from YBaCuO film utilizing a hot–electron effect has been done. |
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Pasadena, Ca |
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258 |
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Karasik, B. S.; Elantiev, A. I. |
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Noise temperature limit of a superconducting hot-electron bolometer mixer |
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1996 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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68 |
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6 |
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853-855 |
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HEB mixer noise temperature, Johnson noise, thermal fluctuation noise, noise bandwidth |
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0003-6951 |
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260 |
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Karasik, B. S.; Il'in, K. S.; Pechen, E. V.; Krasnosvobodtsev, S. I. |
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Diffusion cooling mechanism in a hot-electron NbC microbolometer mixer |
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1996 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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68 |
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16 |
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2285-2287 |
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HEB mixer, diffusion cooling channel, diffusion channel |
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0003-6951 |
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262 |
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Sergeev, A.; Mitin, V. |
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Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials |
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2000 |
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Phys. Rev. B. |
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Phys. Rev. B. |
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61 |
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9 |
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6041-6047 |
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disordered conductors, scattering potential, electron-phonon interaction |
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Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film. |
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0163-1829 |
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307 |
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Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V. |
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Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures |
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2001 |
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Appl. Phys. Lett. |
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79 |
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2049-2051 |
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HEB detector, FIR, far infrared |
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RPLAB @ s @ heb_eph_interaction_Gershenzon |
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315 |
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