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Author Title Year Publication Volume Pages
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field 1977 Sov. Phys. JETP 45 555-565
Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. Effect of a high magnetic field on the spectrum of donors in InSb 1977 Fizika i Tekhnika Poluprovodnikov 11 2373-2375
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. Investigation of free excitons in Ge and their condensation at submillimeter wavelengths 1976 Sov. Phys. JETP 43 116-122
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. Submillimeter spectroscopy of semiconductors 1973 Sov. Phys. JETP 37 299-304
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. Binding energy of a carrier with a neutral impurity atom in germanium and in silicon 1971 JETP Lett. 14 185-186
Gershenzon, E. M.; Gol'tsman, G. N. Transitions of electrons between excited states of donors in germanium 1971 JETP Lett. 14 63-65
Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium 1971 JETP Lett. 14 241
Gerecht, E.; Musante, C. F.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. Optical coupling and conversion gain for NbN HEB mixer at THz frequencies 1997 Proc. 4-th Int. Semicond. Device Research Symp. 47-50
Mohan, N.; Minaeva, O.; Gol'tsman, G. N.; Nasr, M. B.; Saleh, B. E.; Sergienko, A. V.; Teich, M. C. Photon-counting optical coherence-domain reflectometry using superconducting single-photon detectors 2008 Opt. Express 16 18118-18130
Gershenzon, E. M.; Gol'tsman, G. N.; Zorin, M. A.; Karasik, B. S.; Trifonov, V. A. Nonequilibrium and bolometric response of YBaCuO films in a resistive state to infrared low intensity radiation 1994 Council on Low-temp. Phys. 82-83