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Trifonov, V. A.; Karasik, B. S.; Zorin, M. A.; Gol'tsman, G. N.; Gershenzon, E. M.; Lindgren, M.; Danerud, M.; Winkler, D. |
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Title |
9.6 μm wavelength mixing in a patterned YBa2Cu3O7-δ thin film |
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Conference Article |
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1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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337-348 |
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YBCO HTS HEB mixers |
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Hot-electron bolometric (HEB) mixing of 9.6 gm infrared radiation from two lasers in high-quality YBa2Cu307_3 (YBCO) patterned thin film has been demonstrated. A heterodyne measurement showed an intermediate frequency (IF) bandwidth of 18 GHz, limited by our measurement system. An intrinsic limit of 100 GHz is predicted. Between 0.1 and 1 GHz intermediate frequency, temperature fluctuations with an equivalent output noise temperature Tfl up to -150 K, contributed to the mixer noise while Johnson noise dominated above 1 GHz. The overall conversion loss at 77 K at low intermediate frequencies was measured to be -25 dB, of which 13 dB was due to the coupling loss. The IIEB mixer is very promising for use in heterodyne receivers within the whole infrared range. |
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1615 |
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Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I. |
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Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity |
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Conference Article |
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1996 |
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Czech. J. Phys. |
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Czech. J. Phys. |
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46 |
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S2 |
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857-858 |
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NbC films |
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Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory. |
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0011-4626 |
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1617 |
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Gousev, Y. P.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M.; Semenov, A. D.; Barowski, H. S.; Nebosis, R. S.; Renk, K. F. |
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Quasioptical superconducting hot electron bolometer for submillmeter waves |
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Journal Article |
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1996 |
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Int. J. of Infrared and Millimeter Waves |
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Int. J. of Infrared and Millimeter Waves |
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17 |
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2 |
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317-331 |
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NbN HEB |
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We report on a superconducting hot electron bolometer coupled to radiation via a broadband antenna. The bolometer, a structured NbN film, was patterned on a thin dielectric membrane between terminals of a gold slotline antenna. We investigated the response to submillimeter radiation (wave-lengths ∼ 0.1 mm to 0.7 mm) in the fundamental Gaussian mode. We found that the directivity of the antenna was constant within a factor of 2.5 through the whole experimental range. The noise equivalent power of the bolometer at 119 µm was ∼ 3 · 10−13 W/Hz1/2; a time constant of ∼ 160 ps was estimated. |
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0195-9271 |
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1618 |
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Karasik, B. S.; Milostnaya, I. I.; Zorin, M. A.; Elantev, A. I.; Gol'tsman, G. N.; Gershenzon, E. M. |
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Title |
High speed current switching of homogeneous YBaCuO film between superconducting and resistive states |
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Journal Article |
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1995 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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5 |
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2 |
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3042-3045 |
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Keywords |
YBCO HTS HEB switches |
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Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively. |
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1051-8223 |
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1620 |
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Karasik, B. S.; Gol'tsman, G. N.; Voronov, B. M.; Svechnikov, S. I.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Yngvesson, K. S. |
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Title |
Hot electron quasioptical NbN superconducting mixer |
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Journal Article |
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Year |
1995 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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5 |
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2 |
Pages |
2232-2235 |
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Keywords |
NbN HEB mixers |
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Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform. |
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1051-8223 |
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1622 |
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