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Gurovich, B. A.; Tarkhov, M. A.; Prikhod'ko, K. E.; Kuleshova, E. A.; Komarov, D. A.; Stolyarov, V. L.; Olshanskii, E. D.; Goncharov, B. V.; Goncharova, D. A.; Kutuzov, L. V.; Domantovskii, A. G. |
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Controlled modification of superconducting properties of NbN ultrathin films under composite ion beam irradiation |
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Journal Article |
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2014 |
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Nanotechnologies in Russia |
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Nanotechnologies in Russia |
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9 |
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7 |
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386-390 |
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superconducting NbN films composite ion beam irradiation protoning |
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In this work, the results of studying the microstructure and superconducting properties of ultrathin films on the basis of NbN in the initial state and after modification by being subjecting to composite ion beam irradiation with the energy ~1–3) keV are presented. HRTEM analysis showed that the initial films on the sapphire substrate in orientation “c-cut†are characterized by a grain size essentially exceeding the film thickness, while on the other substrates the size of grains corresponds to the thickness of film. Using XPS analysis, it was shown that in the initial films the atomic ratio of Nb and N is 0.51/0.49, respectively, the percentage of oxygen being lower than 5%. For ultrathin films 5 nm in thickness, the critical temperature of transit to superconducting state (T c) is found to be ~3.6 K and the density of critical current is jc ~8MA/cm2. In the work it is experimentally determined that the irradiation of NbN films by composite ion beams leads to the controlled modification of its superconducting properties due to the process of selective substitution of nitrogen atoms on the oxygen atoms. |
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Korneeva, Y. P.; Mikhailov, M. Y.; Pershin, Y. P.; Manova, N. N.; Divochiy, A. V.; Vakhtomin, Y. B.; Korneev, A. A.; Smirnov, K. V.; Sivakov, A. G.; Devizenko, A. Y.; Goltsman, G. N. |
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Superconducting single-photon detector made of MoSi film |
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Journal Article |
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2014 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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27 |
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9 |
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095012 |
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SSPD, SNSPD |
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We fabricated and characterized nanowire superconducting single-photon detectors made of 4 nm thick amorphous Mox Si1−x films. At 1.7 K the best devices exhibit a detection efficiency (DE) up to 18% at 1.2 $\mu {\rm m}$ wavelength of unpolarized light, a characteristic response time of about 6 ns and timing jitter of 120 ps. The DE was studied in wavelength range from 650 nm to 2500 nm. At wavelengths below 1200 nm these detectors reach their maximum DE limited by photon absorption in the thin MoSi film. |
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IOP Publishing |
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0953-2048 |
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RPLAB @ sasha @ korneeva2014superconducting |
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1044 |
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Ozhegov, R.; Elezov, M.; Kurochkin, Y.; Kurochkin, V.; Divochiy, A.; Kovalyuk, V.; Vachtomin, Y.; Smirnov, K.; Goltsman, G. |
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Quantum key distribution over 300 |
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Conference Article |
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2014 |
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Proc. SPIE |
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Proc. SPIE |
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9440 |
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1F (1 to 9) |
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SSPD, SNSPD applicatins, quantum key distribution, QKD |
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We discuss the possibility of polarization state reconstruction and measurement over 302 km by Superconducting Single- Photon Detectors (SSPDs). Because of the excellent characteristics and the possibility to be effectively coupled to singlemode optical fiber many applications of the SSPD have already been reported. The most impressive one is the quantum key distribution (QKD) over 250 km distance. This demonstration shows further possibilities for the improvement of the characteristics of quantum-cryptographic systems such as increasing the bit rate and the quantum channel length, and decreasing the quantum bit error rate (QBER). This improvement is possible because SSPDs have the best characteristics in comparison with other single-photon detectors. We have demonstrated the possibility of polarization state reconstruction and measurement over 302.5 km with superconducting single-photon detectors. The advantage of an autocompensating optical scheme, also known as “plugandplay” for quantum key distribution, is high stability in the presence of distortions along the line. To increase the distance of quantum key distribution with this optical scheme we implement the superconducting single photon detectors (SSPD). At the 5 MHz pulse repetition frequency and the average photon number equal to 0.4 we measured a 33 bit/s quantum key generation for a 101.7 km single mode ber quantum channel. The extremely low SSPD dark count rate allowed us to keep QBER at 1.6% level. |
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SPIE |
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Orlikovsky, A. A. |
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International Conference on Micro- and Nano-Electronics |
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RPLAB @ sasha @ ozhegov2014quantum |
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1048 |
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Bueno, J.; Coumou, P. C. J. J.; Zheng, G.; de Visser, P. J.; Klapwijk, T. M.; Driessen, E. F. C.; Doyle, S.; Baselmans, J. J. A |
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Anomalous response of superconducting titanium nitride resonators to terahertz radiation |
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Journal Article |
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2014 |
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Appl. Phys. Lett. |
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105 |
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192601 (1 to 5) |
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KID, TiN, NEP, disordered superconductors, inhomogeneous state |
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We present an experimental study of kinetic inductance detectors (KIDs) fabricated of atomic layer deposited TiN films and characterized at radiation frequencies of 350 GHz. The responsivity to radiation is measured and found to increase with the increase in radiation powers, opposite to what is expected from theory and observed for hybrid niobium titanium nitride/aluminium (NbTiN/Al) and all-aluminium (all-Al) KIDs. The noise is found to be independent of the level of the radiation power. The noise equivalent power improves with higher radiation powers, also opposite to what is observed and well understood for hybrid NbTiN/Al and all-Al KIDs. We suggest that an inhomogeneous state of these disordered superconductors should be used to explain these observations. |
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1068 |
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Angeluts, A. A.; Bezotosnyi, V. V.; Cheshev, E. A.; Goltsman, G. N.; Finkel, M. I.; Seliverstov, S. V.; Evdokimov, M. N.; Gorbunkov, M. V.; Kitaeva, G. Kh.; Koromyslov, A. L.; Kostryukov, P. V.; Krivonos, M. S.; Lobanov, Yu. V.; Shkurinov, A. P.; Sarkisov, S. Yu.; Tunkin, V. G. |
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Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity |
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Journal Article |
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2014 |
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Laser Phys. Lett. |
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11 |
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1 |
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015004 (1 to 4) |
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HEB applications, HEB detector applications, short THz pulses detection |
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We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics. |
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