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Author Title Year Publication Volume Pages
Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. Germanium hot-electron narrow-band detector 1971 Sov. Radio Engineering And Electronic Physics 16 1346
Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium 1971 JETP Lett. 14 241
Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon 2001 Jetp Lett. 73 44-47
Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. Electron–phonon interaction in disordered conductors 1999 Phys. Rev. B Condens. Matter 263-264 190-192
Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate 1997 Phys. Rev. B 56 10089-10096
Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films 1996 Czech J. Phys. 46 2489-2490
Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons 1975 Sov. Phys. JETP 40 311-315
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions 1976 Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников 10 1379-1383
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. Absorption spectra in electron transitions between excited states of impurities in germanium 1975 JETP Lett. 22 95-97
Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields 1972 Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников 6 362-363
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. Investigation of population and ionization of donor excited states in Ge 1976 Physics of Semiconductors 631-634
Gerecht, E.; Musante, C. F.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. Optical coupling and conversion gain for NbN HEB mixer at THz frequencies 1997 Proc. 4-th Int. Semicond. Device Research Symp. 47-50
Gershenzon, E. M.; Gol'tsman, G. N.; Zorin, M. A.; Karasik, B. S.; Trifonov, V. A. Nonequilibrium and bolometric response of YBaCuO films in a resistive state to infrared low intensity radiation 1994 Council on Low-temp. Phys. 82-83
Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E. Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers 1997 Proc. 27th Eur. Microwave Conf. 2 972-977
Blundell, R.; Kawamura, J. H.; Tong, C. E.; Papa, D. C.; Hunter, T. R.; Gol’tsman, G. N.; Cherednichenko, S. I.; Voronov, B. M.; Gershenzon, E. M. A hot-electron bolometer mixer receiver for the 680-830 GHz frequency range 1998 Proc. 6-th Int. Conf. Terahertz Electron. 18-20