Abstract: Superconducting NbN hot-electron bolometer (HEB) mixer devices have been fabricated and measured at 350 GHz. The HEB is integrated with a double dipole antenna on an extended crystalline quartz hyper hemispherical substrate lens. Heterodyne measurement gave a -3 dB bandwidth, mainly determined by the electron- phonon interaction time, of about 680 and 1000 MHz for two different films with Tc = 8.5 and 11 K respectively. The measured DSB receiver noise temperature is around 3000 K at 800 MHz IF frequency. The main contribution to the output noise from the device is due to electron temperature fluctuations with the equivalent output noise temperature TFL-100 K. TH, has the same frequency dependence as the IF response. The contribution from Johnson noise is of the order of T. The RF coupling loss is estimated to be = 6 dB. The film with lower Tc, had an estimated intrinsic low-frequency conversion loss = 7 dB, while the other film had a conversion loss as high as 14 dB. The difference in intrinsic conversion loss is explained by less uniform absorption of radiation. Measurements of the small signal impedance shows a transition of the output impedance from the DC differential resistance Rd=dV/dI in the low frequency limit to the DC resistance R 0 =Uoff 0 in the bias point for frequencies above 3 GHz. We judge that the optimum shape of the IV-characteristic is more easily obtained at THz frequencies where the main restriction in performance should come from problems with the RF coupling.

Abstract: A transition of YBCO bridge 60 nm thick from superconducting to normal state induced by an abrupt current step has been studied. A subnanosecond stage has been observed during both S-N and N-S transition. The data obtained can be explained by hot-electron phenomena. On the basis of experimental results a prediction of picosecond switch performance has been made.

Abstract: Epitaxial laser deposited YBa2Cu3O7−δ films of ∼50 nm thickness were patterned into detectors consisting of ten parallel 1 μm wide strips in order to study nonequilibrium and bolometric effects. Typically, the patterned samples had critical temperatures around 86 K, transition widths around 2 K and critical current densities above 1×106A/cm2 at 77 K. Pulsed laser measurements at 0.8 μm wavelength (17 ps full width at half maximum) showed a ∼30 ps response, attributed to electron heating, followed by a slower bolometric decay. Amplitude modulation in the band fmod=100 kHz–10 GHz of a laser with wavelength λ=0.8 μm showed two different thermal relaxations in the photoresponse. Phonon escape from the film (∼3 ns) is the limiting process, followed by heat diffusion in the substrate. Similar relaxations were also seen for λ=10.6 μm. The photoresponse measurements were made with the film in the resistive state and extended into the normal state. These states were created by supercritical bias currents. Measurements between 75 and 95 K (i.e., from below to above Tc) showed that the photoresponse was proportional to dR/dT for fmod=1 MHz and 4 GHz. The fast response is limited by the electron‐phonon scattering time, estimated to 1.8 ps from experimental data. The responsivity both at 0.8 and 10.6 μm wavelength was ∼1.2 V/W at fmod=1 GHz and the noise equivalent power was calculated to 1.5×10−9 WHz−1/2 for the fast response.