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Gershenzon, E. M., Gol'tsman, G. N., & Ptitsyna, N. G. (1977). Carrier lifetime in excited states of shallow impurities in germanium. JETP Lett., 25(12), 539–543.
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Gershenzon, E. M., Gol'tsman, G. N., & Kagane, M. L. (1977). Energy spectrum of acceptors in germanium and its response to a magnetic field. Sov. Phys. JETP, 45(4), 769–776.
Abstract: We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression.
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Gershenzon, E. M., Gol'tsman, G. N., & Elant'ev, A. I. (1977). Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field. Sov. Phys. JETP, 45(3), 555–565.
Abstract: The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.
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Blagosklonskaya, L. E., Gershenzon, E. M., Gol'tsman, G. N., & Elant'ev, A. I. (1977). Effect of a high magnetic field on the spectrum of donors in InSb. Fizika i Tekhnika Poluprovodnikov, 11(12), 2373–2375.
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Gershenzon, E. M., Orlova, S. L., Orlov, L. A., Ptitsina, N. G., & Rabinovich, R. I. (1976). Intervalley cyclotron-impurity resonance of electrons in n-Ge. JETP Lett., 24(3), 125–128.
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Gershenzon, E. M., Gol'tsman, G. N., & Ptitsina, N. G. (1976). Investigation of free excitons in Ge and their condensation at submillimeter wavelengths. Sov. Phys. JETP, 43(1), 116–122.
Abstract: Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.
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Gershenzon, E. M., Goltsman, G. N., & Ptitsyna, N. G. (1974). Investigation of excited donor states in GaAs. Sov. Phys. Semicond., 7(10), 1248–1250.
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Gershenzon, E. M., Gol'tsman, G., & Ptitsina, N. G. (1973). Energy spectrum of free excitons in germanium. JETP Lett., 18(3), 93.
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Gershenzon, E. M., Gol'tsman, G. N., & Ptitsina, N. G. (1973). Submillimeter spectroscopy of semiconductors. Sov. Phys. JETP, 37(2), 299–304.
Abstract: The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.
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Goltsman, G. (1972). Simple method for stabilizing power of submillimetric spectrometer. Pribory i Tekhnika Eksperimenta, (1), 136.
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Gershenzon, E. M., Gol'tsman, G. N., & Mel'nikov, A. P. (1971). Binding energy of a carrier with a neutral impurity atom in germanium and in silicon. JETP Lett., 14(5), 185–186.
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Gershenzon, E. M., & Gol'tsman, G. N. (1971). Transitions of electrons between excited states of donors in germanium. JETP Lett., 14(2), 63–65.
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Gershenzon, E. M., Goltsman, G., Orlova, S., Ptitsina, N., & Gurvich, Y. (1971). Germanium hot-electron narrow-band detector. Sov. Radio Engineering And Electronic Physics, 16(8), 1346.
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Gershenzon, E. M., Gol'tsman, G. N., Emtsev, V. V., Mashovets, T. V., Ptitsyna, N. G., & Ryvkin, S. M. (1971). Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium. JETP Lett., 14(6), 241.
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Pentin, I., Finkel, M., Maslennikov, S., Vakhtomin, Y., Smirnov, K., Kaurova, N., et al. (2017). Superconducting hot-electron-bolometer mixers for the mid-IR. Rus. J. Radio Electron., (10), http://jre.cplire.ru/jre/oct17/9/text.pdf. Retrieved July 1, 2024, from http://jre.cplire.ru/jre/oct17/9/abstract_e.html
Abstract: The work presents the result of development of the NbN superconducting hot-electron-bolometer (HEB) mixer. The sensitive element of the mixer is directly coupled to mid-IR radiation, and doesn’t have planar metallic antenna. Investigations of noise characteristics of NbN HEB mixer were performed at the frequency 28.4 THz (λ = 10.6 µm) by using gas-discharge CW CO2-laser without consideration of optical and electrical losses in the heterodyne receiver. The noise temperature of NbN HEB mixer with the size of the sensitive element 10 µm × 10 µm was 2320 K (~ 1.5hν/kB) at the heterodyne frequency of 28.4 THz. The noise temperature was determined by measuring the Y-factor taking into account the term which describes fluctuations of zero-point oscillations in accordance with the fluctuation-dissipation theorem of Calle-Welton. Isothermal method was used to estimate the absorbed heterodyne radiation power which was 9 µW at the optimal operating point for the minimum noise temperature of NbN HEB mixer.
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