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Semenov, A. V.; Devyatov, I. A.; Korneev, A. A.; Smirnov, K. V.; Goltsman, G. N.; Melnikov, A. P. |
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Derivation of expression for thermodynamic potential of “dirty” superconductor |
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Journal Article |
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Year |
2012 |
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Rus. J. Radio Electron. |
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Rus. J. Radio Electron. |
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4 |
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dirty superconductor, Usadel theory, thermodynamic potential |
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We derive a formula for thermodynamic potential of dirty superconductor which express it via isotropic quasiclassical Green functions of Usadel theory. Our result allows unify description of dynamic processes and fluctuations in superconducting nano-electronic devices. |
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7 pages |
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1824 |
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Смирнов, А. В.; Карманцов, М. С.; Смирнов, К. В.; Вахтомин, Ю. Б.; Мастеров, Д. В.; Тархов, М. А.; Павлов, С. А.; Парафин, А. Е. |
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Терагерцовый отклик болометров на основе тонких пленок YBCO |
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2012 |
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ЖТФ |
Abbreviated Journal |
ЖТФ |
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82 |
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12 |
Pages |
108-111 |
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YBCO HEB NEP |
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Представлены первые результаты измерения болометрического отклика высокотемпературных сверхпроводниковых детекторов на основе тонких пленок YBCO на электромагнитное излучение с частотой 2.5 THz. Минимальное значение оптической мощности, эквивалентной шуму созданных детекторов, составило 3.5· 10-9 W/sqrt(Hz)sqrt. Обсуждена возможность дальнейшего увеличения чувствительности исследуемых детекторов. |
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1825 |
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Чулкова, Галина Меркурьевна; Семёнов, Александр Владимирович; Тархов, Михаил Александрович; Гольцман, Григорий Наумович; Корнеев, Александр Александрович; Смирнов, Константин Владимирович |
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О возможности использования PNR-SNPD в системах телекоммуникационной связи |
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2012 |
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Преподаватель ХХI век |
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2 |
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244-246 |
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PNR SSPD, SNSPD, SNPD |
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Рассмотрена возможность применения сверхпроводникового нанополоскового детектора, разрешающего число фотонов (Photon-Number Resolving Superconducting Nanowire Photon Detector, PNR-SNPD), в качестве датчика приёмных модулей телекоммуникационных линий. Оценена мощность оптического импульса, необходимая для достижения приемлемо низкой доли ошибочных битов. |
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1826 |
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Korneeva, Yu. P.; Trifonov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V. |
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Title |
Design of resonator for superconducting single-photon detector |
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Journal Article |
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2011 |
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Rus. J. Radio Electron. |
Abbreviated Journal |
Rus. J. Radio Electron. |
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12 |
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SSPD optical resonator, SNSPD |
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A resonator for superconducting single-photon detector is designed. Near 60% coupling with a radiation propagating from a dielectric substrate of optical fiber is demonstrated to be achieved for typical values of the detector’s film sheet resistance. |
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6 pages |
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1827 |
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Гольцман, Г. Н.; Смирнов, К. В. |
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По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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2001 |
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Письма в ЖЭТФ |
Abbreviated Journal |
Письма в ЖЭТФ |
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74 |
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9 |
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532-538 |
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2DEG, AlGaAs/GaAs heterostructures |
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Рассмотрены теоретические и экспериментальные работы, посвященные изучению электрон-фононного взаимодействия в двумерном электронном газе полупроводниковых гетероструктур при низких температурах в случае сильного разогрева в электрическом поле, в квазиравновесных условиях и в квантующем магнитном поле, перпендикулярном 2D слою. |
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Duplicated as 1541: “Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures” |
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1832 |
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Sidorova, M.; Semenov, A.; Hübers, H.-W.; Kuzmin, A.; Doerner, S.; Ilin, K.; Siegel, M.; Charaev, I.; Vodolazov, D. |
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Timing jitter in photon detection by straight superconducting nanowires: Effect of magnetic field and photon flux |
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2018 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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98 |
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13 |
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134504 (1 to 14) |
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SNSPD, NbN namowires |
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We studied the effects of the external magnetic field and photon flux on timing jitter in photon detection by straight superconducting NbN nanowires. At two wavelengths 800 and 1560 nm, statistical distribution in the appearance times of photon counts exhibits Gaussian shape at small times and an exponential tail at large times. The characteristic exponential time is larger for photons with smaller energy and increases with external magnetic field while variations in the Gaussian part of the distribution are less pronounced. Increasing photon flux drives the nanowire from the discrete quantum detection regime to the uniform bolometric regime that averages out fluctuations of the total number of nonequilibrium electrons created by the photon and drastically reduces jitter. The difference between standard deviations of Gaussian parts of distributions for these two regimes provides the measure for the strength of electron-number fluctuations; it increases with the photon energy. We show that the two-dimensional hot-spot detection model explains qualitatively the effect of magnetic field. |
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2469-9950 |
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1842 |
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Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. |
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Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation |
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2021 |
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Adv. Electron. Mater. |
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Adv. Electron. Mater. |
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7 |
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3 |
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2000872 |
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SWCNT transistors |
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The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications. |
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2199-160X |
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1843 |
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Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. |
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Helicity-sensitive plasmonic terahertz interferometer |
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2020 |
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Nano Lett. |
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Nano Lett. |
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20 |
Issue |
10 |
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7296-7303 |
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graphene, plasmonic interferometer, radiation helicity, terahertz radiation |
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Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials. |
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CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland |
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1530-6984 |
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PMID:32903004 |
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1781 |
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Mohan, N.; Minaeva, O.; Gol'tsman, G. N.; Nasr, M. B.; Saleh, B. E.; Sergienko, A. V.; Teich, M. C. |
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Photon-counting optical coherence-domain reflectometry using superconducting single-photon detectors |
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2008 |
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Opt. Express |
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Opt. Express |
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16 |
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22 |
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18118-18130 |
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SSPD, SNSPD |
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We consider the use of single-photon counting detectors in coherence-domain imaging. Detectors operated in this mode exhibit reduced noise, which leads to increased sensitivity for weak light sources and weakly reflecting samples. In particular, we experimentally demonstrate the possibility of using superconducting single-photon detectors (SSPDs) for optical coherence-domain reflectometry (OCDR). These detectors are sensitive over the full spectral range that is useful for carrying out such imaging in biological samples. With counting rates as high as 100 MHz, SSPDs also offer a high rate of data acquisition if the light flux is sufficient. |
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Department of Biomedical Engineering, Boston University, Boston, MA 02215, USA. nm82@bu.edu |
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1094-4087 |
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PMID:18958090 |
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1407 |
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Pernice, W. H. P.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. |
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High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits |
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2012 |
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Nat. Commun. |
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Nat. Commun. |
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3 |
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1325 (1 to 10) |
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waveguide SSPD |
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Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics. |
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Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA |
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2041-1723 |
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PMID:23271658; PMCID:PMC3535416 |
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1375 |
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