|
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
Xu, Y.; Zheng, X.; Williams, C.; Verevkin, A.; Sobolewski, R.; Chulkova, G.; Lipatov, A.; Okunev, O.; Smirnov, K.; Gol’tsman, G. N. |
Ultrafast superconducting hot-electron single-photon detector |
2001 |
CLEO |
|
345 |
|
|
Huebers, H.-W.; Semenov, A.; Schubert, J.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Krabbe, A.; Roeser, H.-P. |
NbN hot-electron bolometer as THz mixer for SOFIA |
2000 |
Proc. SPIE |
4014 |
195-202 |
|
|
Semenov, A. D.; Gol’tsman, G. N. |
Nonthermal mixing mechanism in a diffusion-cooled hot-electron detector |
2000 |
J. Appl. Phys. |
87 |
502-510 |
|
|
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
2000 |
JETP Lett. |
71 |
31-34 |
|
|
Gerecht, E.; Musante, C. F.; Zhuang, Y.; Yngvesson, K. S.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
NbN hot electron bolometric mixerss—a new technology for low-noise THz receivers |
1999 |
IEEE Trans. Appl. Supercond. |
47 |
2519-2527 |
|
|
Yngvesson, K. S.; Gerecht, E.; Musante, C. F.; Zhuang, Y.; Ji, M.; Goyette, T. M.; Dickinson, J. C.; Waldman, J.; Yagoubov, P. A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
Low-noise HEB heterodyne receivers and focal plane arrays for the THz regime using NbN |
1999 |
Proc. SPIE |
3795 |
357-368 |
|
|
Gol’tsman, G. N.; Gershenzon, E. M. |
Phonon-cooled hot-electron bolometric mixer: overview of recent results |
1999 |
Appl. Supercond. |
6 |
649-655 |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
1999 |
Semicond. |
33 |
551-554 |
|
|
Men’shchikov, E. M.; Gogidze, I. G.; Sergeev, A. V.; Elant’ev, A. I.; Kuminov, P. B.; Gol’tsman, G. N.; Gershenzon, E. M. |
Superconducting fast detector based on the nonequilibrium inductance response of a film of niobium nitride |
1997 |
Tech. Phys. Lett. |
23 |
486-488 |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
|