| Records |
| Author |
Kardashev, N. S.; Andreyanov, V. V.; Buyakas, V. I.; Vinogradov, I. S.; Gvamichava, A. S.; Kotik, A. I.; Kurt, V. G.; Lazareva, G. S.; Mironova, E. N.; Myshonkova, N. V.; Slysh, V. I.; Trubnikov, A. G.; Troitskiy, V. F.; Puryaev, D. T.; Usyukin, V. I. |
| Title |
The Millimetron project |
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Conference Article |
| Year |
2000 |
Publication |
Proc. Lebedev Phys. Institute |
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| Volume |
228 |
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RPLAB @ s @ MILLIMETRON_first |
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308 |
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| Author |
Sergeev, A.; Mitin, V. |
| Title |
Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials |
Type |
Journal Article |
| Year |
2000 |
Publication |
Phys. Rev. B. |
Abbreviated Journal |
Phys. Rev. B. |
| Volume |
61 |
Issue |
9 |
Pages |
6041-6047 |
| Keywords |
disordered conductors, scattering potential, electron-phonon interaction |
| Abstract |
Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film. |
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0163-1829 |
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307 |
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Kroug, M.; Cherednichenko, S.; Merkel, H.; Kollberg, E.; Voronov, B.; Gol'tsman, G.; Hübers, H. W.; Richter, H. |
| Title |
NbN hot electron bolometric mixers for terahertz receivers |
Type |
Journal Article |
| Year |
2001 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
11 |
Issue |
1 |
Pages |
962-965 |
| Keywords |
NbN HEB mixers |
| Abstract |
Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two. |
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312 |
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Karpov, A.; Miller, D.; Rice, F.; Zmuidzinas, J.; Stern, J. A.; Bumble, B.; LeDuc, H. G. |
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Low noise 1.2 THz SIS receiver |
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Conference Article |
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2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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21-22 |
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San Diego, CA, USA |
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Jet Propulsion Laboratory, California Inst.it.u.t.e of Technology |
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RPLAB @ s @ sis_650K_at_1p13THz |
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316 |
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Shi, S. C.; Chin, C. C.; Wang, M. J.; Shan, W. L.; Zhang, W.; Noguchi, T. |
| Title |
Development of a 600–720 GHz SIS Mixer for the SMART |
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Conference Article |
| Year |
2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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215 |
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San Diego, CA, USA |
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Jet Propulsion Laboratory, California Inst.it.u.t.e of Technology |
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RPLAB @ s @ sis_145K_at_p618THz |
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317 |
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