Records |
Author |
Sobolewski, R.; Zhang, J.; Slysz, W.; Pearlman, A.; Verevkin, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Goltsman, G. N. |
Title |
Ultrafast superconducting single-photon optical detectors |
Type |
Conference Article |
Year |
2003 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
5123 |
Issue |
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Pages |
1-11 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We present a new class of single-photon devices for counting of both visible and infrared photons. Our superconducting single-photon detectors (SSPDs) are characterized by the intrinsic quantum efficiency (QE) reaching up to 100%, above 10 GHz counting rate, and negligible dark counts. The detection mechanism is based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The devices are fabricated from 3.5-nm-thick NbN films and operate at 4.2 K, well below the NbN superconducting transition temperature. Various continuous and pulsed laser sources in the wavelength range from 0.4 μm up to >3 μm were implemented in our experiments, enabling us to determine the detector QE in the photon-counting mode, response time, and jitter. For our best 3.5-nm-thick, 10×10 μm2-area devices, QE was found to reach almost 100% for any wavelength shorter than about 800 nm. For longer-wavelength (infrared) radiation, QE decreased exponentially with the photon wavelength increase. Time-resolved measurements of our SSPDs showed that the system-limited detector response pulse width was below 150 ps. The system jitter was measured to be 35 ps. In terms of the counting rate, jitter, and dark counts, the NbN SSPDs significantly outperform their semiconductor counterparts. Already identifeid and implemented applications of our devices range from noninvasive testing of semiconductor VLSI circuits to free-space quantum communications and quantum cryptography. |
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SPIE |
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Spigulis, J.; Teteris, J.; Ozolinsh, M.; Lusis, A. |
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Advanced Optical Devices, Technologies, and Medical Applications |
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1513 |
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Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M. |
Title |
Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz |
Type |
Journal Article |
Year |
2001 |
Publication |
Physics of Vibrations |
Abbreviated Journal |
Physics of Vibrations |
Volume |
9 |
Issue |
4 |
Pages |
242-245 |
Keywords |
NbN HEB mixers |
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1069-1227 |
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1550 |
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Svechnikov, S. I.; Antipov, S. V.; Vakhtomin, Y. B.; Goltsman, G. N.; Gershenzon, E. M.; Cherednichenko, S. I.; Kroug, M.; Kollberg, E. |
Title |
Conversion and noise bandwidths of terahertz NbN hot-electron bolometer mixers |
Type |
Journal Article |
Year |
2001 |
Publication |
Physics of Vibrations |
Abbreviated Journal |
Physics of Vibrations |
Volume |
9 |
Issue |
3 |
Pages |
205-210 |
Keywords |
NbN HEB mixers |
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1069-1227 |
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1551 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Title |
Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range |
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Conference Article |
Year |
1997 |
Publication |
Proc. 4-th Int. Semicond. Device Research Symp. |
Abbreviated Journal |
Proc. 4-th Int. Semicond. Device Research Symp. |
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Pages |
55-58 |
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2DEG, AlGaAs/GaAs heterostructures |
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1602 |
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Gershenzon, E. M.; Gogidze, I. G.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Title |
Picosecond response on optical-range emission in thin YBaCuO films |
Type |
Journal Article |
Year |
1991 |
Publication |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Volume |
17 |
Issue |
22 |
Pages |
6-10 |
Keywords |
YBCO HTS detectors |
Abstract |
Целью настоящей работы является целенаправленный поиск пико-секундного отклика на оптическое излучение выяснение оптимальных условий его наблюдения, а также сравнение характеристик неравновесных эффектов в оптическом и субмиллиметровом диапазонах. |
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Russian |
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no |
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1684 |
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Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. |
Title |
Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure |
Type |
Journal Article |
Year |
1989 |
Publication |
Sov. Phys. and Technics of Semiconductors |
Abbreviated Journal |
Sov. Phys. and Technics of Semiconductors |
Volume |
23 |
Issue |
8 |
Pages |
843-846 |
Keywords |
Ge, crystallography |
Abstract |
Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. |
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Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge |
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no |
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Serial |
1692 |
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Author |
Aksaev, E. E.; Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Title |
Prospects for using high-temperature superconductors to create electron bolometers |
Type |
Journal Article |
Year |
1989 |
Publication |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Volume |
15 |
Issue |
14 |
Pages |
88-93 |
Keywords |
HTS HEB |
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Russian |
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0320-0116 |
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Перспективы применения высокотемпературных сверхпроводников для создания электронных болометров |
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1693 |
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Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Karasik, B. S.; Lyulkin, A. M.; Semenov, A. D. |
Title |
Fast-response superconducting electron bolometer |
Type |
Journal Article |
Year |
1989 |
Publication |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Volume |
15 |
Issue |
3 |
Pages |
88-92 |
Keywords |
Nb HEB |
Abstract |
The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns. |
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Russian |
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1694 |
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Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Lyulkin, A. M.; Semenov, A. D.; Sergeev, A. V. |
Title |
Limiting characteristics of fast-response superconducting bolometers |
Type |
Journal Article |
Year |
1989 |
Publication |
Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Zhurnal Tekhnicheskoi Fiziki |
Volume |
59 |
Issue |
2 |
Pages |
11-120 |
Keywords |
HEB |
Abstract |
Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон-ного взаимодействия. Сформулированы требования к конструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. |
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1696 |
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Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
Title |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
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Journal Article |
Year |
1988 |
Publication |
Fizika i Tekhnika Poluprovodnikov |
Abbreviated Journal |
Fizika i Tekhnika Poluprovodnikov |
Volume |
22 |
Issue |
3 |
Pages |
540-543 |
Keywords |
Ge, free holes, capture |
Abstract |
Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии. |
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Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge |
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1698 |
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Gershenzon, Ye. M.; Goltsman, G. N.; Yelantyev, A. I.; Petrova, Ye. B.; Ptitsina, N. G.; Filatov, V. S. |
Title |
Lecture demonstrations of properties of superconductors and liquid helium |
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Journal Article |
Year |
1987 |
Publication |
USSR Rept Phys. Math. JPRS UPM |
Abbreviated Journal |
USSR Rept Phys. Math. JPRS UPM |
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24 |
Issue |
7 |
Pages |
51 |
Keywords |
demonstrations, lections |
Abstract |
New demonstrations for low temperature physics courses are described. Two transparent Dewar vacuum flasks fitting one inside the other with the external flask for nitrogen and the internal flask for helium are used. The helium temperature can be regulated in the 4.2 to 1.6 K range and the effects of reducing helium to the superfluid state at 2.17 K can be shown: boiling abruptly stops and superfluid flow appears. In order to show the electric and magnetic characteristics of superconductivity, a superconducting NbTi solenoid containing nonsuperconducting wire and germanium and superconducting Nb materials with different critical temperatures is placed in the helium refrigerant vessel. The fall of the resistance at the critical temperatures can be shown. In order to show magnetic field and superconductive current flow properties a shunt of superconductive material is connected in parallel to the coil and is enclosed in a teflon container with a heater which can vary its temperature. When it is heated and not superconductive, magnetic field effects can be demonstrated and when it is unheated and superconducting a continuous current can be demonstrated. |
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1704 |
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Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Title |
Kinetics of submillimeter impurity and exciton photoconduction in Ge |
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Journal Article |
Year |
1982 |
Publication |
Optics and Spectroscopy |
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Optics and Spectroscopy |
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52 |
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4 |
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454-455 |
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Ge, exciton photoconduction |
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1715 |
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Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I. |
Title |
Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors |
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Conference Article |
Year |
1978 |
Publication |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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42 |
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6 |
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1231-1234 |
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spectrum, semiconductors, admixtures, strong magnetic-field |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia |
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blagosklonskaya1978effect |
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1724 |
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Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Title |
Investigation of excited donor states in GaAs |
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Journal Article |
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1974 |
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Sov. Phys. Semicond. |
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Sov. Phys. Semicond. |
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7 |
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10 |
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1248-1250 |
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GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1733 |
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Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S. |
Title |
Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates |
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Journal Article |
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2021 |
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Phys. Rev. Applied |
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Phys. Rev. Applied |
Volume |
15 |
Issue |
5 |
Pages |
054014 |
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InOx, Au/Ni, NbN films |
Abstract |
We examine the role of a silicon-based amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The samples studied consist of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry is used to measure the electron temperature Te of the films as a function of Joule power per unit area P2D. In all samples, we observe a P2D∝Tne dependence, with exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear temperature dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for a phonon mean free path shorter than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics. |
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1769 |
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