Records |
Author |
Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. |
Title |
Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation |
Type |
Journal Article |
Year |
2013 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
103 |
Issue |
18 |
Pages |
181121 (1 to 5) |
Keywords |
carbon nanotubes, CNT, THz radiation, SiO2 substrate |
Abstract |
We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0003-6951 |
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1171 |
Permanent link to this record |
|
|
|
Author |
Elezov, M. S.; Semenov, A. V.; An, P. P.; Tarkhov, M. A.; Goltsman, G. N.; Kardakova, A. I.; Kazakov, A. Y. |
Title |
Investigating the detection regimes of a superconducting single-photon detector |
Type |
Journal Article |
Year |
2013 |
Publication |
J. Opt. Technol. |
Abbreviated Journal |
J. Opt. Technol. |
Volume |
80 |
Issue |
7 |
Pages |
435 |
Keywords |
SSPD, quantum efficiency |
Abstract |
The detection regimes of a superconducting single-photon detector have been investigated. A technique is proposed for determining the regions in which “pure regimes” predominate. Based on experimental data, the dependences of the internal quantum efficiency on the bias current are determined in the one-, two-, and three-photon detection regimes. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1070-9762 |
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1172 |
Permanent link to this record |
|
|
|
Author |
Komrakova, S.; Kovalyuk, V.; An, P.; Golikov, A.; Rybin, M.; Obraztsova, E.; Goltsman, G. |
Title |
Effective absorption coefficient of a graphene atop of silicon nitride nanophotonic circuit |
Type |
Conference Article |
Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
Volume |
1695 |
Issue |
|
Pages |
012135 |
Keywords |
silicon nitride O-ring resonator, ORR |
Abstract |
In this paper, we demonstrate the results of a study of the optical absorption properties of graphene integrated with silicon nitride O-ring resonator. We fabricated an array of O-ring resonators with different graphene coverage area atop. By measuring the transmission spectra of nanophotonic devices with and without graphene, we calculated the effective absorption coefficient of the graphene on a rib silicon nitride waveguide. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1742-6588 |
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1177 |
Permanent link to this record |
|
|
|
Author |
Prokhodtsov, A.; Kovalyuk, V.; An, P.; Golikov, A.; Shakhovoy, R.; Sharoglazova, V.; Udaltsov, A.; Kurochkin, Y.; Goltsman, G. |
Title |
Silicon nitride Mach-Zehnder interferometer for on-chip quantum random number generation |
Type |
Conference Article |
Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
Volume |
1695 |
Issue |
|
Pages |
012118 |
Keywords |
Mach-Zehnder interferometer, MZI |
Abstract |
In this work, we experimentally studied silicon nitride Mach-Zehnder interferometer (MZI) with two directional couplers and 400 ps optical delay line for telecom wavelength 1550 nm. We achieved the extinction ratio in a range of 0.76-13.86 dB and system coupling losses of 28-44 dB, depending on the parameters of directional couplers. The developed interferometer is promising for the use in a compact random number generator for the needs of a fully integrated quantum cryptography system, where compact design, as well as high generation speed, are needed. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1742-6588 |
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1178 |
Permanent link to this record |
|
|
|
Author |
Venediktov, I. O.; Elezov, M. S.; Prokhodtsov, A. I.; Kovalyuk, V. V.; An, P. P.; Golikov, A. D.; Shcherbatenko, M. L.; Sych, D. V.; Goltsman, G. N. |
Title |
Study of microheater’s phase modulation for on-chip Kennedy receiver |
Type |
Conference Article |
Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
Volume |
1695 |
Issue |
|
Pages |
012117 |
Keywords |
Mach-Zehnder interferometers, MZI |
Abstract |
In this work we describe phase modulators for several Mach-Zehnder interferometers (MZI) on silicon nitride platform for telecomm wavelength (1550 nm). We obtained current-voltage and phase-voltage curves for these modulators. MZI are needed for experimental realisation of various quantum receivers that can distinguish weak coherent states of light with extremely low error. Thermo-optical (TO) modulation is ensured by microheaters on one of the arms of MZI, which enables the change of the refractive index of the material with temperature. This approach allows to apply the necessary voltage to the golden microheaters to obtain the required phase change. For the on-chip microheaters we demonstrate the dependence of the phase shift on the voltage applied to our on-chip microheaters. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1742-6588 |
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1179 |
Permanent link to this record |