Korneev, A., Divochiy, A., Tarkhov, M., Minaeva, O., Seleznev, V., Kaurova, N., et al. (2008). Superconducting NbN-nanowire single-photon detectors capable of photon number resolving. In Supercond. News Forum.
Abstract: We present our latest generation of ultra-fast superconducting NbN single-photon detectors (SSPD) capable of photon-number resolving (PNR). The novel SSPDs combine 10 μm x 10 μm active area with low kinetic inductance and PNR capability. That resulted in significantly reduced photoresponse pulse duration, allowing for GHz counting rates. The detector’s response magnitude is directly proportional to the number of incident photons, which makes this feature easy to use. We present experimental data on the performance of the PNR SSPDs. These detectors are perfectly suited for fibreless free-space telecommunications, as well as for ultra-fast quantum cryptography and quantum computing.
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Ozhegov, R., Elezov, M., Kurochkin, Y., Kurochkin, V., Divochiy, A., Kovalyuk, V., et al. (2014). Quantum key distribution over 300. In A. A. Orlikovsky (Ed.), Proc. SPIE (Vol. 9440, 1F (1 to 9)). SPIE.
Abstract: We discuss the possibility of polarization state reconstruction and measurement over 302 km by Superconducting Single- Photon Detectors (SSPDs). Because of the excellent characteristics and the possibility to be effectively coupled to singlemode optical fiber many applications of the SSPD have already been reported. The most impressive one is the quantum key distribution (QKD) over 250 km distance. This demonstration shows further possibilities for the improvement of the characteristics of quantum-cryptographic systems such as increasing the bit rate and the quantum channel length, and decreasing the quantum bit error rate (QBER). This improvement is possible because SSPDs have the best characteristics in comparison with other single-photon detectors. We have demonstrated the possibility of polarization state reconstruction and measurement over 302.5 km with superconducting single-photon detectors. The advantage of an autocompensating optical scheme, also known as “plugandplay” for quantum key distribution, is high stability in the presence of distortions along the line. To increase the distance of quantum key distribution with this optical scheme we implement the superconducting single photon detectors (SSPD). At the 5 MHz pulse repetition frequency and the average photon number equal to 0.4 we measured a 33 bit/s quantum key generation for a 101.7 km single mode ber quantum channel. The extremely low SSPD dark count rate allowed us to keep QBER at 1.6% level.
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Smirnov, K. V., Vakhtomin, Y. B., Divochiy, A. V., Ozhegov, R. V., Pentin, I. V., Slivinskaya, E. V., et al. (2009). Single-photon detectors for the visible and infrared parts of the spectrum based on NbN nanostructures. In Proc. Progress In Electromagnetics Research Symp. (pp. 863–864). Moscow, Russia.
Abstract: The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types ofdetectors [1, 2] and their use both in fundamental and applied studies [3–6]. In this paper, wepresent the results of the development and fabrication of receiving systems for the visible andinfrared parts of the spectrum optimised for use in telecommunication systems and quantumcryptography.
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Sidorova, M. V., Divochiy, A., Vakhtomin, Y. B., & Smirnov, K. V. (2015). Ultrafast superconducting single-photon detector with reduced-size active area coupled to a tapered lensed single-mode fiber. In International Society for Optics and Photonics (Ed.), Proc. SPIE (Vol. 9504, 950408 (1 to 9)).
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Trifonov, A., Tong, C. - Y. E., Grimes, P., Lobanov, Y., Kaurova, N., Blundell, R., et al. (2017). Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver. In IEEE Trans. Appl. Supercond. (Vol. 27, 6).
Abstract: We report on the development of a multi-pixel
Hot Electron Bolometer (HEB) receiver fabricated using
silicon membrane technology. The receiver comprises a
2 × 2 array of four HEB mixers, fabricated on a single
chip. The HEB mixer chip is based on a superconducting
NbN thin film deposited on top of the silicon-on-insulator
(SOI) substrate. The thicknesses of the device layer and
handling layer of the SOI substrate are 20 μm and 300 μm
respectively. The thickness of the device layer is chosen
such that it corresponds to a quarter-wave in silicon at
1.35 THz. The HEB mixer is integrated with a bow-tie
antenna structure, in turn designed for coupling to a
circular waveguide,
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