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Author |
Kroug, M.; Yagoubov, P.; Gol'tsman, G.; Kollberg, E. |
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Title |
NbN quasioptical phonon cooled hot electron bolometric mixers at THz frequencies |
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Conference Article |
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Year |
1997 |
Publication |
Inst. Phys. Conf. Ser. |
Abbreviated Journal |
Inst. Phys. Conf. Ser. |
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Volume |
1 |
Issue |
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Pages |
405-408 |
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Keywords |
NbN HEB mixers |
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Address |
Veldhoven |
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Bristol |
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ISSN |
0951-3248 |
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Conference |
3rd Eur. Conf. on Applied Superconductivity |
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Serial |
1600 |
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Author |
Merkel, H. F.; Yagoubov, P. A.; Kroug, M.; Khosropanah, P.; Kollberg, E. L.; Gol’tsman, G. N.; Gershenzon, E. M. |
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Title |
Noise temperature and absorbed LO power measurement methods for NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies |
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Conference Article |
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Year |
1998 |
Publication |
Proc. 28th European Microwave Conf. |
Abbreviated Journal |
Proc. 28th European Microwave Conf. |
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Volume |
1 |
Issue |
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Pages |
294-299 |
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Keywords |
NbN HEB mixers |
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Abstract |
In this paper the absorbed LO power requirements and the noise performance of NbN based phonon-cooled hot electron bolometric (HEB) quasioptical mixers are investigated for RF frequencies in the 0.55-1.1 range The minimal measured DSB noise temperatures are about 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The increase in noise temperature at 1.1THz is attributed to water absorption. The absorbed LO power is measured using a calorimetric approach. The results are subsequently corrected for lattice heating. These values are compared to results of a novel one dimensional hot spot mixer models and to a more traditional isotherm method which tends to underestimate the absorbed LO power for small bias powers. Typically a LO power between 50nW and 100nW is needed to pump the device to the optimal operating point. |
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28th European Microwave Conference |
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1580 |
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Author |
Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H. W.; Svechnikov, S.; Voronov, B.; Gol'tsman, G.; Wang, Z. |
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Title |
Hot electron bolometric mixers based on NbN films deposited on MgO substrates |
Type |
Conference Article |
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Year |
1999 |
Publication |
Inst. Phys. Conf. Ser. |
Abbreviated Journal |
Inst. Phys. Conf. Ser. |
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Volume |
167 |
Issue |
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Pages |
687-690 |
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Barcelona, Spain |
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4th Europ. Conf. on Appl. Superconductivity, Inst. Phys. Conf. Ser. |
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Serial |
297 |
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Author |
Kroug, M. |
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Title |
Hot electron bolometric mixers for a quasi-optical terahertz receiver |
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Book Whole |
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Year |
2001 |
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Ph.D. thesis |
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Chalmers University of Technology, Gothenburg, Sweden |
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310 |
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Author |
Kroug, M.; Cherednichenko, S.; Merkel, H.; Kollberg, E.; Voronov, B.; Gol'tsman, G.; Hübers, H. W.; Richter, H. |
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Title |
NbN hot electron bolometric mixers for terahertz receivers |
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Journal Article |
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Year |
2001 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
11 |
Issue |
1 |
Pages |
962-965 |
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Keywords |
NbN HEB mixers |
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Abstract |
Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two. |
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312 |
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