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Author 0kunev, 0.; Dzardanov, A.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Gol'tsman, G.; Gershenzon, E.
Title NbN hot electron waveguide mixer for 100 GHz operation Type Conference Article
Year 1994 Publication Proc. 5th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 5th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 214-224
Keywords waveguide NbN HEB mixers
Abstract NbN is a promising superconducting material used to develope hot- electron superconducting mixers with an IF bandwidth over 1 GHz. In the 100 GHz frequency range, the following parameters were obtained for NbN films 50 A thick: the noise temperature of the receiver (DSB) 1000 K; the conversion losses 10 d13, the IF bandwidth 1 GHz; the local oscillator power 1 /LW. An increase of NbN film thickness up to 80-100 A and increase of working temperature up to 7-8 K, and a better mixer matching may allow to broader the IF band up to 3 Gllz, to reduce the conversion losses down to 3-5 dB and the noise tempera- ture down to 200-300 K.
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Area Expedition Conference
Notes Approved no
Call Number Serial 1644
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Author Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R.
Title High resolution THz gas spectrometer based on semiconductor and superconductor devices Type Conference Article
Year 2017 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.
Volume 132 Issue Pages 02001 (1 to 2)
Keywords NbN HEB mixers, detectors, THz spectroscopy
Abstract The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined.
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2100-014X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1328
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Author Antipov, A. V.; Seleznev, V. A.; Vakhtomin, Y. B.; Morozov, P. V.; Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Smirnov, K.
Title Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range Type Conference Article
Year 2020 Publication IOP Conf. Ser.: Mater. Sci. Eng. Abbreviated Journal IOP Conf. Ser.: Mater. Sci. Eng.
Volume 781 Issue Pages 012011 (1 to 5)
Keywords WSi, NbN SSPD, SNSPD
Abstract Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm.
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1757-899X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1799
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Author Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G.
Title Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency Type Conference Article
Year 2017 Publication Proc. 28th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 28th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 147-148
Keywords NbN HEB mixers, GaN buffer-layer, IF bandwidth
Abstract In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth.
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Notes Approved no
Call Number Serial 1175
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Author Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G.
Title Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer Type Journal Article
Year 2019 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume 32 Issue 7 Pages 075003
Keywords NbN HEB mixer, GaN buffer layer, sapphire substrate
Abstract We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.
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Publisher IOP Publishing Place of Publication Editor
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Notes Approved no
Call Number Antipov_2019 Serial 1277
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Author Antipov, S. V.; Vachtomin, Yu. B.; Maslennikov, S. N.; Smirnov, K. V.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Goltsman, G. N.
Title Noise performance of quasioptical ultrathin NbN hot electron bolometer mixer at 2.5 and 3.8 THz Type Conference Article
Year 2004 Publication Proc. 5-th MSMW Abbreviated Journal Proc. 5-th MSMW
Volume 2 Issue Pages 592-594
Keywords NbN HEB mixers
Abstract To put space-based and airborne heterodyne instruments into operation at frequencies above 1 THz the superconducting NbN hot-electron bolometer (HEB) will be incorporated into heterodyne receiver as a mixer. At frequencies above 1.3 THz the sensitivity of the NbN HEB mixers outperform the one of the Schottky diodes and SIS-mixers, and the receiver noise temperature of the NbN HEB mixers increase with frequency. In this paper we present the results of the noise temperature measurements within one batch of NbN HEB mixers based on 3.5 mn thick superconducting NbN film grown on Si substrate with MgO buffer layer at the LO frequencies 2.5 THz and 3.8 THz.
Address Kharkov, Ukraine
Corporate Author Thesis
Publisher Place of Publication Kharkov, Ukraine Editor
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Area Expedition Conference The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828)
Notes Approved no
Call Number Serial 351
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Author Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M.
Title Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz Type Journal Article
Year 2001 Publication Physics of Vibrations Abbreviated Journal Physics of Vibrations
Volume 9 Issue 4 Pages 242-245
Keywords NbN HEB mixers
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Series Volume Series Issue Edition
ISSN 1069-1227 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1550
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Author Arutyunov, K. Y.; Ramos-Alvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol'tsman, G. N.
Title Superconductivity in highly disordered NbN nanowires Type Journal Article
Year 2016 Publication Nanotechnol. Abbreviated Journal Nanotechnol.
Volume 27 Issue 47 Pages 47lt02 (1 to 8)
Keywords NbN nanowires
Abstract The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links.
Address National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics,109028, Moscow, Russia. P L Kapitza Institute for Physical Problems RAS, Moscow, 119334, Russia
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Language English Summary Language Original Title
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Series Volume Series Issue Edition
ISSN 0957-4484 ISBN Medium
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Notes PMID:27782000 Approved no
Call Number Serial 1332
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Author Arutyunov, K. Y.; Ramos-Álvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol’tsman, G. N.
Title Quasi-1-dimensional superconductivity in highly disordered NbN nanowires Type Miscellaneous
Year 2016 Publication arXiv Abbreviated Journal
Volume Issue Pages
Keywords narrow NbN nanowires, BCS
Abstract The topic of superconductivity in strongly disordered materials has attracted a significant attention. In particular vivid debates are related to the subject of intrinsic spatial inhomogeneity responsible for non-BCS relation between the superconducting gap and the pairing potential. Here we report experimental study of electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. We find that conventional models based on phase slip concept provide reasonable fits for the shape of the R(T) transition curve. Temperature dependence of the critical current follows the text-book Ginzburg-Landau prediction for quasi-one-dimensional superconducting channel Ic~(1-T/Tc)^3/2. Hence, one may conclude that the intrinsic electronic inhomogeneity either does not exist in our structures, or, if exist, does not affect their resistive state properties.
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Notes Duplicated as 1332 Approved no
Call Number Serial 1338
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Author Baeva, E.; Sidorova, M.; Korneev, A.; Goltsman, G.
Title Precise measurement of the thermal conductivity of superconductor Type Conference Article
Year 2018 Publication Proc. AIP Conf. Abbreviated Journal Proc. AIP Conf.
Volume 1936 Issue 1 Pages 020003 (1 to 4)
Keywords NbN SSPD, SNSPD
Abstract Measuring the thermal properties such as the heat capacity provide information about intrinsic mechanisms operated inside. In general, the ratio between electron and phonon specific heat Ce/Cp shows how the absorbed energy shared between electron and phonon subsystems. In this work we make estimations for amplitude-modulated absorption of THz radiation technique for investigation of the ratio Ce/Cp in superconducting Niobium Nitride (NbN) at T = Tc. Our results indicates that experimentally the frequency of modulation has to be extra large to extract the quantity. We perform a new technique allowed to work at low frequency with accurately measurement of absorbed power.
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Notes Approved no
Call Number doi:10.1063/1.5025441 Serial 1311
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Author Baeva, E. M.; Sidorova, M. V.; Korneev, A. A.; Smirnov, K. V.; Divochy, A. V.; Morozov, P. V.; Zolotov, P. I.; Vakhtomin, Y. B.; Semenov, A. V.; Klapwijk, T. M.; Khrapai, V. S.; Goltsman, G. N.
Title Thermal properties of NbN single-photon detectors Type Journal Article
Year 2018 Publication Phys. Rev. Applied Abbreviated Journal Phys. Rev. Applied
Volume 10 Issue 6 Pages 064063 (1 to 8)
Keywords NbN SSPD, SNSPD
Abstract We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices.
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2331-7019 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1226
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Author Baeva, E. M.; Titova, N. A.; Kardakova, A. I.; Piatrusha, S. U.; Khrapai, V. S.
Title Universal bottleneck for thermal relaxation in disordered metallic films Type Journal Article
Year 2020 Publication JETP Lett. Abbreviated Journal Jetp Lett.
Volume 111 Issue 2 Pages 104-108
Keywords NbN disordered metallic films, thermal relaxation
Abstract We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-3640 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1164
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Author Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S.
Title Thermal relaxation in metal films bottlenecked by diffuson lattice excitations of amorphous substrates Type Miscellaneous
Year 2021 Publication arXiv Abbreviated Journal arXiv
Volume Issue Pages
Keywords metal films, NbN, InOx, Au/Ni, thermal relaxation
Abstract Here we examine the role of the amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The studied samples are made up of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry was used to measure the electron temperature Te of the films as a function of Joule power per unit of area P2D. In all samples, we observe the dependence P2D∝Tne with the exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear T-dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for the phonon mean free path smaller than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics.
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Notes Approved no
Call Number Serial 1163
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Author Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S.
Title Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates Type Journal Article
Year 2021 Publication Phys. Rev. Applied Abbreviated Journal Phys. Rev. Applied
Volume 15 Issue 5 Pages 054014
Keywords InOx, Au/Ni, NbN films
Abstract We examine the role of a silicon-based amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The samples studied consist of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry is used to measure the electron temperature Te of the films as a function of Joule power per unit area P2D. In all samples, we observe a P2D∝Tne dependence, with exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear temperature dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for a phonon mean free path shorter than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2331-7019 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1769
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Author Baryshev, A.; Baselmans, J. J. A.; Reker, S. F.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Vachtomin, Yu.; Maslennikov, S.; Antipov, S.; Voronov, B.; Gol'tsman, G.
Title Direct detection effect in hot electron bolometer mixers Type Abstract
Year 2005 Publication Proc. 16th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 16th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 463-464
Keywords NbN HEB mixers, effect of direct detection, direct detection effect
Abstract NbN phonon cooled hot electron bolometer (HEB) mixers are currently the most sensitive heterodyne detectors at frequencies above 1.2 THz. They combine a good sensitivity (8-15 times the quantum limit), an IF bandwidth of the order of 4-6 GHz and a wide RF bandwidth from 0.7-5.2 THz. However, for use in a space based observatory, such as Herschel, it is of vital importance that the Local Oscillator (LO) power requirement of the mixer is compatible with the low output power of present day THz LO sources. This can be achieved by reducing the mixer volume and critical current. However, the large RF bandwidth and low LO power requirement of such a mixer result in a direct detection effect, characterized by a change in the bias current of the HEB when changing the RF signal from a black body load at 300 K to one at 77 K. As a result the measured sensitivity using a 300 K and 77 K calibration load differs significantly from the small signal sensitivity relevant for astronomical observations. In this article we describe a set of dedicated experiments to characterize the direct detection effect for a small volume quasi-optical NbN phonon cooled HEB mixer. We measure the direct detection effect in a small volume (0.15 μm · 1 μm · 3.5 nm) quasi- optical NbN phonon cooled HEB mixer at 1.6 THz. We found that the small signal sensitivity of the receiver is underestimated by approximately 35% due to the direct detection effect and that the optimal operating point is shifted to higher bias voltages when using calibration loads of 300 K and 77 K. Using a 200 GHz wide band-pass filter at the 4.2 K the direct detection effect virtually disappears. Heterodyne response measurements using water vapor absorption line in a gas cell confirms the existence and a magnitude of a direct detection effect. We also propose a theoretical explanation using uniform electron heating model. This direct detection effect has important implications for the calibration procedure of these receivers in real telescope systems. We are developing Nb HEBs for a large-format, diffusion-cooled hot electron bolometer (HEB) array submillimeter camera. The goal is to produce a 64 pixel array together with the University of Arizona to be used on the HHT on Mt Graham. It is designed to detect in the 850 GHz atmospheric window. We have fabricated Nb HEBs using a new angle- deposition process, which had previously produced high quality Nb-Au bilayer HEB devices at Yale. [1] We have characterized these devices using heterodyne mixing at ~30 GHz to compare to 345 GHz tests at the University of Arizona. We can also directly compare our Nb HEB mixers to SIS mixers in this same 345 GHz system. This allows us to rigorously calibrate the system’s losses and extract the mixer noise temperature in a well characterized mixer block, before undertaking the 850 GHz system. Here we give a report on the initial devices we have fabricated and characterized. * Department of Applied Physics, Yale University ** Department of Astronomy, University of Arizona [1] Applied Physics Letters 84, Number 8; p.1404-7, Feb 23 (2004)
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Notes Approved no
Call Number Serial 1475
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