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Author  |
Gol’tsman, G. N.; Okunev, O.; Chulkova, G.; Lipatov, A.; Semenov, A.; Smirnov, K.; Voronov, B.; Dzardanov, A.; Williams, C.; Sobolewski, R. | ||||
| Title | Picosecond superconducting single-photon optical detector | Type | Journal Article | ||
| Year | 2001 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 79 | Issue | 6 | Pages | 705-707 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts. | ||||
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| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1543 | |||
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| Author |
Gol’tsman, G. N.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Zhang, J.; Verevkin, A.; Sobolewski, R. | ||||
| Title | Fabrication of nanostructured superconducting single-photon detectors | Type | Journal Article | ||
| Year | 2003 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 13 | Issue | 2 | Pages | 192-195 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed. | ||||
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1558-2515 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1515 | |||
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| Author |
Gol’tsman, G.; Okunev, O.; Chulkova, G.; Lipatov, A.; Dzardanov, A.; Smirnov, K.; Semenov, A.; Voronov, B.; Williams, C.; Sobolewski, R. | ||||
| Title | Fabrication and properties of an ultrafast NbN hot-electron single-photon detector | Type | Journal Article | ||
| Year | 2001 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 11 | Issue | 1 | Pages | 574-577 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | A new type of ultra-high-speed single-photon counter for visible and near-infrared wavebands based on an ultrathin NbN hot-electron photodetector (HEP) has been developed. The detector consists of a very narrow superconducting stripe, biased close to its critical current. An incoming photon absorbed by the stripe produces a resistive hotspot and causes an increase in the film’s supercurrent density above the critical value, leading to temporary formation of a resistive barrier across the device and an easily measurable voltage pulse. Our NbN HEP is an ultrafast (estimated response time is 30 ps; registered time, due to apparatus limitations, is 150 ps), frequency unselective device with very large intrinsic gain and negligible dark counts. We have observed sequences of output pulses, interpreted as single-photon events for very weak laser beams with wavelengths ranging from 0.5 /spl mu/m to 2.1 /spl mu/m and the signal-to-noise ratio of about 30 dB. | ||||
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1558-2515 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1547 | |||
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| Author |
Gol’tsman, G.N. | ||||
| Title | Overview of recent results for superconducting NbN terahertz and optical detectors and mixers | Type | Miscellaneous | ||
| Year | 2014 | Publication | SM2 – Seminar on Terahertz Photonics | Abbreviated Journal | |
| Volume | Issue | Pages | 0562 | ||
| Keywords | NbN SSPD, SNSPD, HEB | ||||
| Abstract | We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1746 | |||
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| Author |
Il'in, K. S.; Currie, M.; Lindgren, M.; Milostnaya, I. I.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R. | ||||
| Title | Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors | Type | Journal Article | ||
| Year | 1999 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 9 | Issue | 2 | Pages | 3338-3341 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | We report our studies on the response of ultrathin superconducting NbN hot-electron photodetectors. We have measured the photoresponse of few-nm-thick, micron-size structures, which consisted of single and multiple microbridges, to radiation from the continuous-wave semiconductor laser and the femtosecond Ti:sapphire laser with the wavelength of 790 nm and 400 nm, respectively. The maximum responsivity was observed near the film's superconducting transition with the device optimally current-biased in the resistive state. The responsivity of the detector, normalized to its illuminated area and the coupling factor, was 220 A/W(3/spl times/10/sup 4/ V/W), which corresponded to a quantum efficiency of 340. The responsivity was wavelength independent from the far infrared to the ultraviolet range, and was at least two orders of magnitude higher than comparable semiconductor optical detectors. The time constant of the photoresponse signal was 45 ps, when was measured at 2.15 K in the resistive (switched) state using a cryogenic electro-optical sampling technique with subpicosecond resolution. The obtained results agree very well with our calculations performed using a two-temperature model of the electron heating in thin superconducting films. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1566 | |||
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| Author |
Il'in, K. S.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R. | ||||
| Title | Infrared hot-electron NbN superconducting photodetectors for imaging applications | Type | Journal Article | ||
| Year | 1999 | Publication | Supercond. Sci. Technol. | Abbreviated Journal | Supercond. Sci. Technol. |
| Volume | 12 | Issue | 11 | Pages | 755-758 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | We report an effective quantum efficiency of 340, responsivity >200 A W-1 (>104 V W-1) and response time of 27±5 ps at temperatures close to the superconducting transition for NbN superconducting hot-electron photodetectors (HEPs) in the near-infrared and optical ranges. Our studies were performed on a few nm thick NbN films deposited on sapphire substrates and patterned into µm-size multibridge detector structures, incorporated into a coplanar transmission line. The time-resolved photoresponse was studied by means of subpicosecond electro-optic sampling with 100 fs wide laser pulses. The quantum efficiency and responsivity studies of our photodetectors were conducted using an amplitude-modulated infrared beam, fibre-optically coupled to the device. The observed picosecond response time and the very high efficiency and sensitivity of the NbN HEPs make them an excellent choice for infrared imaging photodetectors and input optical-to-electrical transducers for superconducting digital circuits. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0953-2048 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1562 | |||
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| Author |
Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R. | ||||
| Title | Ultimate quantum efficiency of a superconducting hot-electron photodetector | Type | Journal Article | ||
| Year | 1998 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 73 | Issue | 26 | Pages | 3938-3940 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W, respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs. |
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1579 | |||
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| Author |
Kerman, A. J.; Dauler, E. A.; Keicher, W. E.; Yang, J. K. W.; Berggren, K. K.; Gol’tsman, G.; Voronov, B. | ||||
| Title | Kinetic-inductance-limited reset time of superconducting nanowire photon counters | Type | Journal Article | ||
| Year | 2006 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 88 | Issue | 11 | Pages | 111116 (1 to 3) |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | We investigate the recovery of superconducting NbN-nanowire photon counters after detection of an optical pulse at a wavelength of 1550nm, and present a model that quantitatively accounts for our observations. The reset time is found to be limited by the large kinetic inductance of these nanowires, which forces a tradeoff between counting rate and either detection efficiency or active area. Devices of usable size and high detection efficiency are found to have reset times orders of magnitude longer than their intrinsic photoresponse time. The authors acknowledge D. Oates and W. Oliver (MIT Lincoln Laboratory), S.W. Nam, A. Miller, and R. Hadfield (NIST) and R. Sobolewski, A. Pearlman, and A. Verevkin (University of Rochester) for helpful discussions and technical assistance. This work made use of MIT’s shared scanning-electron-beam-lithography facility in the Research Laboratory of Electronics. This work is sponsored by the United States Air Force under Air Force Contract No. FA8721-05-C-0002. Opinions, interpretations, recommendations and conclusions are those of the authors and are not necessarily endorsed by the United States Government. |
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| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1453 | |||
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| Author |
Korneev, A. A. | ||||
| Title | Superconducting NbN microstrip single-photon detectors | Type | Abstract | ||
| Year | 2021 | Publication | Proc. Quantum Optics and Photon Counting | Abbreviated Journal | Proc. Quantum Optics and Photon Counting |
| Volume | 11771 | Issue | Pages | ||
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | Superconducting Single-Photon Detectors (SSPD) invented two decades ago have evolved to a mature technology and have become devices of choice in the advanced applications of quantum optics, such as quantum cryptography and optical quantum computing. In these applications SSPDs are coupled to single-mode fibers and feature almost unity detection efficiency, negligible dark counts, picosecond timing jitter and MHz photon count rate. Meanwhile, there are great many applications requiring coupling to multi-mode fibers or free space. ‘Classical’ SSPDs with 100-nm-wide superconducting strip and covering area of about 100 µm2 are not suitable for further scaling due to degradation of performance and low fabrication yield. Recently we have demonstrated single-photon counting in micron-wide superconducting bridges and strips. Here we present our approach to the realization of practical photon-counting detectors of large enough area to be efficiently coupled to multi-mode fibers or free space. The detector is either a meander or a spiral of 1-µm-wide strip covering an area of 50x50 µm2. Being operated at 1.7K temperature it demonstrates the saturated detection efficiency (i.e. limited by the absorption in the detector) up to 1550 nm wavelength, about 10 ns dead time and timing jitter in range 50-100 ps. | ||||
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| Publisher | SPIE | Place of Publication | Editor | Prochazka, I.; Štefaňák, M.; Sobolewski, R.; Gábris, A. | |
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| Area | Expedition | Conference | Quantum Optics and Photon Counting; SPIE Optics + Optoelectronics, 2021, Online Only | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1784 | |||
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| Author |
Korneev, A.; Minaeva, O.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Smirnov, K.; Seleznev, V.; Gol'tsman, G.; Pearlman, A.; Slysz, W.; Cross, A.; Alvarez, P.; Verevkin, A.; Sobolewski, R. | ||||
| Title | Superconducting single-photon ultrathin NbN film detector | Type | Journal Article | ||
| Year | 2005 | Publication | Quantum Electronics | Abbreviated Journal | |
| Volume | 35 | Issue | 8 | Pages | 698-700 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | Superconducting single-photon ultrathin NbN film detectors are studied. The development of manufacturing technology of detectors and the reduction of their operating temperature down to 2 K resulted in a considerable increase in their quantum efficiency, which reached in the visible region (at 0.56 μm) 30%—40%, i.e., achieved the limit determined by the absorption coefficient of the film. The quantum efficiency exponentially decreases with increasing wavelength, being equal to ~20% at 1.55 μm and ~0.02% at 5 μm. For the dark count rate of ~10-4s-1, the experimental equivalent noise power was 1.5×10-20 W Hz-1/2; it can be decreased in the future down to the record low value of 5×10-21 W Hz-1/2. The time resolution of the detector is 30 ps. | ||||
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| Notes | Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN | Approved | no | ||
| Call Number | Serial | 383 | |||
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