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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L.
Title Energy spectrum of acceptors in germanium and its response to a magnetic field Type Journal Article
Year 1977 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 45 Issue 4 Pages 769-776
Keywords p-Ge, photoconductivity, energy spectrum, magnetic field
Abstract We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression.
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Call Number Serial 1727
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.
Title Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum Type Journal Article
Year 1987 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 46 Issue 5 Pages 237-238
Keywords YBCO HTS detectors
Abstract For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6.
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Call Number Serial 1703
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P.
Title Binding energy of a carrier with a neutral impurity atom in germanium and in silicon Type Journal Article
Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 14 Issue 5 Pages 185-186
Keywords Ge, Si, neutral impurity atom, binding energy
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Call Number Serial 1739
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Kinetics of electron and hole binding into excitons in germanium Type Journal Article
Year 1983 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 57 Issue 2 Pages 369-376
Keywords Ge, electron and hole binding
Abstract The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
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Call Number Serial 1711
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Cross section for binding of free carriers into excitons in germanium Type Journal Article
Year 1981 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 33 Issue 11 Pages 574
Keywords Ge, excitons, photoconductivity
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Call Number Serial 1718
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G.
Title Capture of photoexcited carriers by shallow impurity centers in germanium Type Journal Article
Year 1979 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 50 Issue 4 Pages 728-734
Keywords Ge, photoexcited carriers, shallow impurity centers
Abstract Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities.
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Call Number Serial 1720
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Population and lifetime of excited states of shallow impurities in Ge Type Journal Article
Year 1979 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 49 Issue 2 Pages 355-362
Keywords Ge, photothermal ionization, shallow impurities
Abstract An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.
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Call Number Serial 1719
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Investigation of free excitons in Ge and their condensation at submillimeter wavelengths Type Journal Article
Year 1976 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 43 Issue 1 Pages 116-122
Keywords Ge, free excitons
Abstract Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.
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Call Number Serial 1731
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Submillimeter spectroscopy of semiconductors Type Journal Article
Year 1973 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 37 Issue 2 Pages 299-304
Keywords semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons
Abstract The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.
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Call Number Serial 1735
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Author (up) Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Observation of the free-exciton spectrum at submillimeter wavelengths Type Journal Article
Year 1972 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 16 Issue 4 Pages 161-162
Keywords Ge, energy spectrum, free excitons
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Notes Approved no
Call Number Serial 1736
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