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Bremer, J. W.; Newhouse, V. L. |
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1958 |
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Phys. Rev. Lett. |
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1 |
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282 |
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Bremer, J. W.; Newhouse, V. L. |
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no |
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MSPU @ s @ bremer_prl_1958 |
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215 |
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Broglie, Louis de; Silva, J. Andrade e |
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Interpretation of a recent experiment on interference of photon beams |
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1968 |
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Phys. Rev. |
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172 |
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5 |
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1284-1285 |
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The interpretation of an important recent experiment by Pfleegor and Mandel according to the causal formulation of the wave-particle dualism is developed. This interpretation is simpler and seems more satisfactory than that provided by the current ideas on the nature of light. |
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From [RpL 938] |
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1070 |
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Bulaevskii, L. N.; Graf, M. J.; Batista, C. D.; Kogan, V. G. |
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Vortex-induced dissipation in narrow current-biased thin-film superconducting strips |
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Journal Article |
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2011 |
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Phys. Rev. B |
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Phys. Rev. B |
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83 |
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14 |
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9 |
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A vortex crossing a thin-film superconducting strip from one edge to the other, perpendicular to the bias current, is the dominant mechanism of dissipation for films of thickness d on the order of the coherence length ξ and of width w much narrower than the Pearl length Λâ‰<ab>wâ‰<ab>ξ. At high bias currents I*<I<Ic the heat released by the crossing of a single vortex suffices to create a belt-like normal-state region across the strip, resulting in a detectable voltage pulse. Here Ic is the critical current at which the energy barrier vanishes for a single vortex crossing. The belt forms along the vortex path and causes a transition of the entire strip into the normal state. We estimate I* to be roughly Ic/3. Furthermore, we argue that such “hot†vortex crossings are the origin of dark counts in photon detectors, which operate in the regime of metastable superconductivity at currents between I* and Ic. We estimate the rate of vortex crossings and compare it with recent experimental data for dark counts. For currents below I*, that is, in the stable superconducting but resistive regime, we estimate the amplitude and duration of voltage pulses induced by a single vortex crossing. |
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SSPD |
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RPLAB @ gujma @ |
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688 |
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Bulaevskii, L. N.; Graf, Matthias J.; Kogan, V. G. |
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Title |
Vortex-assisted photon counts and their magnetic field dependence in single-photon superconducting detectors |
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Journal Article |
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2012 |
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Phys. Rev. B |
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Phys. Rev. B |
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85 |
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1 |
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9 |
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SSPD; SNSPD; single-vortex crossing; normal-state belt |
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We argue that photon counts in a superconducting nanowire single-photon detector (SNSPD) are caused by the transition from a current-biased metastable superconducting state to the normal state. Such a transition is triggered by vortices crossing the thin and narrow superconducting strip from one edge to another due to the Lorentz force. Detector counts in SNSPDs may be caused by three processes: (a) a single incident photon with sufficient energy to break enough Cooper pairs to create a normal-state belt across the entire width of the strip (direct photon count), (b) thermally induced single-vortex crossing in the absence of photons (dark count), which at high-bias currents releases the energy sufficient to trigger the transition to the normal state in a belt across the whole width of the strip, and (c) a single incident photon of insufficient energy to create a normal-state belt but initiating a subsequent single-vortex crossing, which provides the rest of the energy needed to create the normal-state belt (vortex-assisted single-photon count). We derive the current dependence of the rate of vortex-assisted photon counts. The resulting photon count rate has a plateau at high currents close to the critical current and drops as a power law with high exponent at lower currents. While the magnetic field perpendicular to the film plane does not affect the formation of hot spots by photons, it causes the rate of vortex crossings (with or without photons) to increase. We show that by applying a magnetic field one may characterize the energy barrier for vortex crossings and identify the origin of dark counts and vortex-assisted photon counts. |
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no |
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RPLAB @ gujma @ |
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733 |
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Author |
Callen, Herbert. B.; Welton, Theodore A. |
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Irreversibility and generalized noise |
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Year |
1951 |
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Phys. Rev. |
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83 |
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1 |
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34-40 |
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American Physical Society |
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214 |
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Ciulin, V.; Carter, S. G.; Sherwin, M. S. |
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Terahertz optical mixing in biased GaAs single quantum wells |
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Journal Article |
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2004 |
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Phys. Rev. B |
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Phys. Rev. B |
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70 |
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11 |
Pages |
115312-(1-6) |
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optical mixing |
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1098-0121 |
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501 |
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Cooper, L. N. |
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Bound electron pairs in a degenerate fermi gas |
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1956 |
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Phys. Rev. |
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Phys. Rev. |
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104 |
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4 |
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1189-1190 |
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BCS |
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899 |
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Coumou, P. C. J. J.; Driessen, E. F. C.; Bueno, J.; Chapelier, C.; Klapwijk, T. M. |
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Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films |
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2013 |
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Phys. Rev. B |
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88 |
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18 |
Pages |
180505 (1 to 5) |
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strongly disordered superconducting TiN films, microwave resonators |
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We have studied the electrodynamic response of strongly disordered superconducting TiN films using microwave resonators, where the disordered superconductor is the resonating element in a high-quality superconducting environment of NbTiN. We describe the response assuming an effective pair-breaking mechanism modifying the density of states and compare this to local tunneling spectra obtained using scanning tunneling spectroscopy. For the least disordered film (kFl=8.7, Rs=13Ω), we find good agreement, whereas for the most disordered film (kFl=0.82, Rs=4.3kΩ), there is a strong discrepancy, which signals the breakdown of a model based on uniform properties. |
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1069 |
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Heslinga, D. R.; Shafranjuk, S. E.; van Kempen, H.; Klapwijk, T. M. |
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Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy |
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Journal Article |
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1994 |
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Phys. Rev. B |
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Phys. Rev. B |
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49 |
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15 |
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10484-10494 |
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Nb, Si, Nb-Si, Nb/Si, Si/Nb, Andreev reflection, point-contact spectroscopy |
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Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data. |
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American Physical Society |
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1005 |
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Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E. |
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Electron heating in metallic resistors at sub-Kelvin temperature |
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2007 |
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Phys. Rev. B |
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Phys. Rev. B |
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76 |
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165426(1-9) |
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electron heating in resistor, HEB distributed model, HEB model, hot electrons |
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In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic diffusion to and from the connecting wires and electron-phonon coupling. The goal of this paper is to present a general solution of the problem in a form that can easily be used in practical situations. As an application, we compute two quantities that depend on the electronic temperature profile: the second and the third cumulant of the current noise at zero frequency, as a function of the voltage across the resistor. We also consider time-dependent heating, an issue relevant for experiments in which current pulses are used, for instance, in time-resolved calorimetry experiments. |
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Recommended by Klapwijk as example for writing the article on the HEB model. |
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936 |
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