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Zhang, W., Li, N., Jiang, L., Ren, Y., Yao, Q. - J., Lin, Z. - H., et al. (2008). Dependence of noise temperature of quasi-optical superconducting hot-electron bolometer mixers on bath temperature and optical-axis displacement. In C. Zhang, & X. - C. Zhang (Eds.), Proc. SPIE (Vol. 6840, 684007 (1 to 8)). Spie.
Abstract: It is known that the increase of bath temperature results in the decrease of critical current of superconducting hot-electron bolometer (HEB) mixers owing to the depression of superconductivity, thus leading to the degradation of the mixer’s sensitivity. Here we report our study on the effect of bath temperature on the heterodyne mixing performance of quasi-optical superconducting NbN HEB mixers incorporated with a two-arm log-spiral antenna. The correlation between the bath temperature, critical current, LO power requirement and noise temperature is investigated at 0.5 THz. Furthermore, the heterodyne mixing performance of quasi-optical superconducting NbN HEB mixers is examined while there is an optical-axis displacement between the center of the extended hemispherical silicon lens and the superconducting NbN HEB device, which is placed on the back of the lens. Detailed experimental results and analysis are presented.
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Jiang, L., Miao, W., Zhang, W., Li, N., Lin, Z. H., Yao, Q. J., et al. (2006). Characterization of quasi-optical NbN phonon-cooled superconducting HEB mixers. In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 55–58).
Abstract: In this paper, we thoroughly investigate the performance of quasi-optical NbN phonon-cooled superconducting hot-electron bolometer (HEB) mixers, cryogenically cooled by a close-cycled 4-K refrigerator at 500 GI-1z and 850 GHz. The uncorrected lowest receiver noise Abstract---In temperatures measured are 800 K at 500 CHz without anti-reflection coating, and 1000 K @ 850 GHz with a 50 11M thick Mylar anti-reflection coating. The dependence of receiver noise temperature on the critical current and bath temperature of HEB mixer is also investigated here. Lifetime of quasi-optical superconducting NbN HEB mixers of different volumes, room temperature resistances, and critical temperatures are thoroughly studied. Increased room temperature resistance with time over the initial resistance changes between 1 and 1.2, and the reduced critical current with time over the initial value fluctuates slightly around 0.7 for most HEB mixers even of different volumes, room temperature resistances, and critical temperatures. The critical current degrades sharply vvhile room temperature resistance varies over 1.25.
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Zhang, W., Jiang, L., Lin, Z. H., Yao, Q. J., Li, J., Shi, S. C., et al. (2005). Development of a quasi-optical NbN superconducting HEB mixer. In Proc. 16th Int. Symp. Space Terahertz Technol. (pp. 209–213).
Abstract: In this paper, we report the performance of a quasi-optical NbN superconducting HEB (hot electron bolometer) mixer measured at 500 and 850GHz. The quasi-optical NbN superconducting HEB mixer is cryogenically cooled by a 4-K close-cycled refrigerator. Measured receiver noise temperature at 850 and 500GHz are 3000K and 2500K respectively with wire grid as beamsplitter, while the lowest receiver noise temperature is found to be approximately 1200K with Mylar film. The theoretical receiver noise temperature (taking into account the elliptical polarization of log-spiral antenna) is consistent with measured one. The receiver noise temperature and conversion gain with 15-μm Mylar film as the beamsplitter at 500GHz are thoroughly investigated for different LO pumping levels and dc biases. The stability of the mixer’s IF output power is also demonstrated.
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Jiang, L., Zhang, W., Yao, Q. J., Lin, Z. H., Li, J., Shi, S. C., et al. (2005). Characterization of a quasi-optical NbN superconducting hot-electron bolometer mixer. In Proc. PIERS (Vol. 1, pp. 587–590).
Abstract: In this paper, we report the performance of a quasi-optical NbN superconducting HEB (hot electron bolome-ter) mixer measured at 500 GHz. The quasi-optical NbN superconducting HEB mixer is cryogenically cooled bya 4-K close-cycled refrigerator. Its receiver noise temperature and conversion gain are thoroughly investigatedfor different LO pumping levels and dc biases. The lowest receiver noise temperature is found to be approxi-mately 1200 K, and reduced to about 445 K after correcting theloss of the measurement system. The stabilityof the mixer’s IF output power is also demonstrated.
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Antipov, S., Trifonov, A., Krause, S., Meledin, D., Desmaris, V., Belitsky, V., et al. (2017). Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency. In Proc. 28th Int. Symp. Space Terahertz Technol. (pp. 147–148).
Abstract: In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth.
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