Abstract: We present our studies on the quantum efficiency (QE) and the noise equivalent power (NEP) of the latest-generation, nanostructured, superconducting, single-photon detectors (SSPDs) in the wavelength range from 0.5 to 5.6 /spl mu/m, operated at temperatures in the 2.0- to 4.2-K range. Our detectors are designed as 4-nm-thick and 100-nm-wide NbN meander-shaped stripes, patterned by electron-beam lithography and cover a 10/spl times/10-/spl mu/m/sup 2/ active area. The best-achieved QE at 2.0 K for 1.55-/spl mu/m photons is 17%, and QE for 1.3-/spl mu/m infrared photons reaches its saturation value of /spl sim/30%. The SSPD NEP at 2.0 K is as low as 5/spl times/10/sup -21/ W/Hz/sup -1/2/. Our nanostructured SSPDs, operated at 2.0 K, significantly outperform their semiconducting counterparts, and, together with their GHz counting rate and picosecond timing jitter, they are devices-of-choice for practical quantum key distribution systems and free-space (even interplanetary) quantum optical communications.

Abstract: Superconducting Single-Photon Detectors (SSPD) invented two decades ago have evolved to a mature technology and have become devices of choice in the advanced applications of quantum optics, such as quantum cryptography and optical quantum computing. In these applications SSPDs are coupled to single-mode fibers and feature almost unity detection efficiency, negligible dark counts, picosecond timing jitter and MHz photon count rate. Meanwhile, there are great many applications requiring coupling to multi-mode fibers or free space. ‘Classical’ SSPDs with 100-nm-wide superconducting strip and covering area of about 100 µm2 are not suitable for further scaling due to degradation of performance and low fabrication yield. Recently we have demonstrated single-photon counting in micron-wide superconducting bridges and strips. Here we present our approach to the realization of practical photon-counting detectors of large enough area to be efficiently coupled to multi-mode fibers or free space. The detector is either a meander or a spiral of 1-µm-wide strip covering an area of 50x50 µm2. Being operated at 1.7K temperature it demonstrates the saturated detection efficiency (i.e. limited by the absorption in the detector) up to 1550 nm wavelength, about 10 ns dead time and timing jitter in range 50-100 ps.

Abstract: We report our study of detection efficiency (DE) saturation in wavelength range 400 – 1550 nm for the NbN Superconducting Microstrip Single-Photon Detectors (SMSPD) featuring the strip width up to 3 μm. We observe an expected decrease of the $DE$ saturation plateau with the increase of photon wavelength and decrease of film sheet resistance. At 1.7 K temperature DE saturation can be clearly observed at 1550 nm wavelength in strip with the width up to 2 μm when sheet resistance of the film is above 630Ω/sq. In such strips the length of the saturation plateau almost does not depend on the strip width. We used these films to make meander-shaped detectors with the light sensitive area from 20×20μm2 to a circle 50 μm in diameter. In the latter case, the detector with the strip width of 0.49 μm demonstrates saturation of DE up to 1064 nm wavelength. Although DE at 1310 and 1550 nm is not saturated, it is as high as 60%. The response time is limited by the kinetic inductance and equals to 20 ns(by 1/e decay), timing jitter is 44 ps. When coupled to multi-mode fibre large-area meanders demonstrate significantly higher dark count rate which we attribute to thermal background photons, thus advanced filtering technique would be required for practical applications.

Abstract: We investigate the absorption properties of U-shaped niobium nitride (NbN) nanowires atop nanophotonic circuits. Nanowires as narrow as 20nm are realized in direct contact with Si3N4 waveguides and their absorption properties are extracted through balanced measurements. We perform a full characterization of the absorption coefficient in dependence of length, width and separation of the fabricated nanowires, as well as for waveguides with different cross-section and etch depth. Our results show excellent agreement with finite-element analysis simulations for all considered parameters. The experimental data thus allows for optimizing absorption properties of emerging single-photon detectors co-integrated with telecom wavelength optical circuits.

Abstract: In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers.

Abstract: Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two.

Abstract: We study spontaneous parametric downconversion (SPDC) in the strongly non-degenerate regime when the idler wave hits the terahertz range. By using the hot-electron bolometer, for the first time the SPDC-generated idler-wave photons were directly detected in the terahertz frequency range. Spectrum of corresponding signal photons was measured using standard technique by the CCD camera. Possible applications of correlated optical-terahertz biphotons are discussed.