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Author (up) Gol'tsman, G. N.; Goghidze, I. G.; Kouminov, P. B.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M.
Title Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses Type Journal Article
Year 1994 Publication J. Supercond. Abbreviated Journal J. Supercond.
Volume 7 Issue 4 Pages 751-755
Keywords YBCO HTS detector, nonequilibrium response
Abstract The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0896-1107 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1636
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Author (up) Gol'tsman, G. N.; Karasik, B. S.; Svechnikov, S. I.; Gershenzon, E. M.; Ekström, H.; Kollberg E.
Title Noise temperature of NbN hot—electron quasioptical superconducting mixer in 200-700 GHz range Type Abstract
Year 1995 Publication Proc. 6th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 6th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 268
Keywords NbN HEB mixers, noise temperature
Abstract The electron heating effect in superconducting films is becoming very attractive for the development of THz range mixers because of the absence of frequency limitations inherent in the bolometric mechanism. However, the evidence for the spectral dependence of the position of optimal operating point has been found recently for NbN thin film devices 1.2 • The effect is presumably attributed to the variation in the absorption of radiation depending on the frequency. Since the resistive state is not spatially uniform the coupling efficiency of the mixer device with radiation can be different for frequencies larger than Zeilh and those smaller than 2Alh (d is the effective superconducting gap in the resistive state). To study the effect more thoroughly we have investigated the noise temperature of quasioptical NbN mixer device with broken hue tapered slot antenna in the frequency range 200-700 GHz. The device consists of several (5-10) parallel strips 1 jim wide and 6-7 tun thick made from NbN film on Si0 2 -Si 3 N 4 -Si membrane. The strips are connected with the gold contacts of the slot-line antenna which serves both as bias and IF leads. We used backward wave oscillators as LO sources and a standard hot/cold load technique for noise temperature measurements. The frequency dependence of noise temperature is mainly determined by two factors: frequency properties of the antenna and frequency dependence of the NbN film impedance. To separate both factors we monitored the frequency dependence of the device responsivity in the detector mode at a higher temperature within the superconducting transition where the impedance of NbN film is close to its normal resistance. In this case the impedance of the device itself is frequency independent. The experimental results will be reported at the Symposium. 1. G. Gollsman, S. Jacobsson, H. EkstrOm, B. Karasik, E. Kollberg, and E. Gershenzon, “Slot-line tapered antenna with NbN hot electron mixer for 300-360 GHz operation,” Proc of the 5th Int. Symp. on Space Terahertz Technology, pp. 209-213a, May 10-12,1994. 2. B.S. Karasik, G.N. Gol i tsman, B.M. Voronov, S.I. Svechnikov, E.M. Gershenzon, H. Ekstrom, S. Jacobsson, E. Kollberg, and K.S. Yngvesson, “Hot electron quasioptical NbN superconducting mixer,” presented at the ASC94, submitted to IEEE Trans. on Appl. Superconductivity.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1627
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Author (up) Gol’tsman, G. N.; Kouminov, P. B.; Goghidze, I. G.; Karasik, B. S.; Gershenzon, E. M.
Title Nonbolometric and fast bolometric responses of YBaCuO thin films in superconducting, resistive, and normal states Type Conference Article
Year 1994 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 2159 Issue Pages 81-86
Keywords YBCO HTS HEB, nonbolornetric
Abstract The transient voltage response in both epitaxial and granular YBaCuO thin films to 20 ps pulses of YAG:Nd laser radiation with 0.63 micrometers and 1.54 micrometers was studied. In normal and resistive states both types of films demonstrate two components: nonequilibrium picosecond component and following bolometric nanosecond. The normalized amplitudes are almost the same for all films. In superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to several orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of order parameter by the excess of quasiparticles followed by the change of resistance in normal and resistive states or kinetic inductance in superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the crossection for current percolation through the disordered network os Josephson weak links and by a decrease of condensate density in neighboring regions.
Address
Corporate Author Thesis
Publisher SPIE Place of Publication Editor Nahum, M.; Villegier, J.-C.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference High-Temperature Superconducting Detectors: Bolometric and Nonbolometric
Notes Approved no
Call Number Serial 1641
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Author (up) Gousev, Y. P.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M.; Semenov, A. D.; Barowski, H. S.; Nebosis, R. S.; Renk, K. F.
Title Quasioptical superconducting hot electron bolometer for submillmeter waves Type Journal Article
Year 1996 Publication Int. J. of Infrared and Millimeter Waves Abbreviated Journal Int. J. of Infrared and Millimeter Waves
Volume 17 Issue 2 Pages 317-331
Keywords NbN HEB
Abstract We report on a superconducting hot electron bolometer coupled to radiation via a broadband antenna. The bolometer, a structured NbN film, was patterned on a thin dielectric membrane between terminals of a gold slotline antenna. We investigated the response to submillimeter radiation (wave-lengths ∼ 0.1 mm to 0.7 mm) in the fundamental Gaussian mode. We found that the directivity of the antenna was constant within a factor of 2.5 through the whole experimental range. The noise equivalent power of the bolometer at 119 µm was ∼ 3 · 10−13 W/Hz1/2; a time constant of ∼ 160 ps was estimated.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0195-9271 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1618
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Author (up) Heusinger, M. A.; Nebosis,R. S.; Schatz, W.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M.
Title Temperature dependence of bolometric and non-bolometric photoresponse of a structured YBa2Cu3O7-δ thin film Type Conference Article
Year 1993 Publication Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences Abbreviated Journal Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences
Volume 112 Issue Pages 193-195
Keywords YBCO HTS detectors
Abstract We investigated the temperature dependence of the transient voltage photoresponse of a current biased structured YBa2Cu3O7−δ thin film in its transition temperature region, around 79 K. Both, picosecond nonbolometric and nanosecond bolometric response to ultrashort far-infrared laser pulses were found for frequencies between 25 cm−1 and 215 cm−1. We will discuss optimum conditions for radiation detection and present an analysis of the dynamical behaviour of excited high T c thin films.
Address
Corporate Author Thesis
Publisher Place of Publication Editor Meissner, M.; Pohl, R. O.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992
Notes Approved no
Call Number Serial 1663
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Author (up) Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I.
Title Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity Type Conference Article
Year 1996 Publication Czech. J. Phys. Abbreviated Journal Czech. J. Phys.
Volume 46 Issue S2 Pages 857-858
Keywords NbC films
Abstract Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0011-4626 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1617
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Author (up) Karasik, B. S.; Elantiev, A. I.
Title Analysis of the noise performance of a hot-electron superconducting bolometer mixer Type Conference Article
Year 1995 Publication Proc. 6th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 6th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 229-246
Keywords HEB mixers
Abstract A theoretical analysis for the noise temperature of hot–electron superconducting mixer has been presented. Thecontributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteriaensuring low noise performance of the mixer has been stated and a simple analytic expression for the noisetemperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivitydoes not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noisemechanisms has been estimated to be as low as 40–90 K for a mixer device made from Nb or NbN thin film.Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperaturerelaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidthis of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been madewhen a distinction between the impedance measured at high intermediate frequency (larger than the mixerbandwidth) and the mixer ohmic resistance has been taken into account.Recently obtained experimental data on Nb and NbNbolometer mixer devices are viewed in connection with thetheoretical predictions.The noise temperature limit has also been specified for the mixer device where an outdiffusion coolingmechanism rather than the electron–phonon energy relaxation determines the mixer bandwidth. A consideration ofthe noise performance of a bolometer mixer made from YBaCuO film utilizing a hot–electron effect has been done.
Address
Corporate Author Thesis
Publisher Place of Publication Pasadena, Ca Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 258
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Author (up) Karasik, B. S.; Elantiev, A. I.
Title Noise temperature limit of a superconducting hot-electron bolometer mixer Type Journal Article
Year 1996 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 68 Issue 6 Pages 853-855
Keywords HEB mixer noise temperature, Johnson noise, thermal fluctuation noise, noise bandwidth
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 260
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Author (up) Karasik, B. S.; Gol'tsman, G. N.; Voronov, B. M.; Svechnikov, S. I.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Yngvesson, K. S.
Title Hot electron quasioptical NbN superconducting mixer Type Journal Article
Year 1995 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 5 Issue 2 Pages 2232-2235
Keywords NbN HEB mixers
Abstract Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1622
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Author (up) Karasik, B. S.; Il'in, K. S.; Pechen, E. V.; Krasnosvobodtsev, S. I.
Title Diffusion cooling mechanism in a hot-electron NbC microbolometer mixer Type Journal Article
Year 1996 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 68 Issue 16 Pages 2285-2287
Keywords HEB mixer, diffusion cooling channel, diffusion channel
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 262
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Author (up) Karasik, B. S.; Il'in, K. S.; Ptitsina, N. G.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen', E. V.; Krasnosvobodtsev, S. I.
Title Electron-phonon scattering rate in impure NbC films Type Abstract
Year 1998 Publication NASA/ADS Abbreviated Journal NASA/ADS
Volume Issue Pages Y35.08
Keywords NbC films
Abstract The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference American Physical Society, Annual March Meeting, March 16-20, 1998 Los Angeles, CA
Notes Approved no
Call Number Serial 1591
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Author (up) Karasik, B. S.; Milostnaya, I. I.; Zorin, M. A.; Elantev, A. I.; Gol'tsman, G. N.; Gershenzon, E. M.
Title High speed current switching of homogeneous YBaCuO film between superconducting and resistive states Type Journal Article
Year 1995 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 5 Issue 2 Pages 3042-3045
Keywords YBCO HTS HEB switches
Abstract Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1620
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Author (up) Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M.
Title Subnanosecond switching of YBaCuO films between superconducting and normal states induced by current pulse Type Journal Article
Year 1995 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.
Volume 77 Issue 8 Pages 4064-4070
Keywords YBCO HTS switches
Abstract A study is reported of the current switching in high‐quality YBaCuO films deposited onto NdGaO3 and ZrO2 substrates between superconducting (S) and normal (N) states. The films 60–120 nm thick prepared by laser ablation were structured into single strips between gold contacts. The time dependence of the resistance after application of the voltage step to the film was monitored. Experiment performed within certain ranges of voltage amplitudes and temperatures has shown the occurrence of the fast stage (shorter than 400 ps) both in S‐N and N‐S transitions. A fraction of the film resistance changing within this stage in the S‐N transition increases with the current amplitude. A subnanosecond N‐S stage becomes more pronounced for shorter pulses. The fast switching is followed by the much slower change of resistance. The mechanism of switching is discussed in terms of the hot‐electron phenomena in YBaCuO. The contributions of other thermal processes (e.g., a phonon escape from the film, a heat diffusion in the film and substrate, a resistive domain formation) in the subsequent stage of the resistance dynamic have been also discussed. The basic limiting characteristics (average dissipated power, energy needed for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0021-8979 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1623
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Author (up) Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M.
Title Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films Type Conference Article
Year 1994 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 2160 Issue Pages 74-82
Keywords YBCO HTS switches
Abstract We report on a study of S-N and N-S current switching in high quality YBaCuO films deposited onto ZrO2 and NdGaO3 substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.
Address
Corporate Author Thesis
Publisher SPIE Place of Publication Editor Buhrman, R.A.; Clarke, J.T.; Daly, K.; Koch, R.H.; Luine, J.A.; Simon, R.W.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Superconductive Devices and Circuits
Notes Approved no
Call Number Serial 1638
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Author (up) Lindgren, M.; Trifonov, V.; Zorin, M.; Danerud, M.; Winkler, D.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E.M.
Title Transient resistive photoresponse of YBa2Cu3O7−δ films using low power 0.8 and 10.6 μm laser radiation Type Journal Article
Year 1994 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 64 Issue 22 Pages 3036-3038
Keywords YBCO HTS HEB, nonequilibrium
Abstract Thin YBa2Cu3O7−δ laser deposited films were patterned into devices consisting of ten parallel 1 μm wide strips. Nonequilibrium picosecond and bolometric photoresponses were studied by the use of 17 ps full width at half‐maximum laser pulses and amplitude modulated radiation from an AlGaAs laser up to 10 GHz and from a CO2 laser up to 1 GHz. The time and frequency domain measurements were in agreement. The fast response can be explained by electron heating. The use of low optical power and a sensitive measurement system excluded any nonlinear transient processes and kinetic inductance changes in the superconducting state. At 1 GHz modulation frequency, the responsivity was ∼1.2 V/W both for 0.8 and 10.6 μm wavelengths. The sensitivity of a fast and spectrally broadband infrared detector is discussed.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1639
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