Records |
Author |
Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
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Journal Article |
Year |
1975 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
40 |
Issue |
2 |
Pages |
311-315 |
Keywords |
Ge, cyclotron resonance |
Abstract |
Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
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1768 |
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Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
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Journal Article |
Year |
1975 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
22 |
Issue |
4 |
Pages |
95-97 |
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Ge, impurities, excited states, absorption spectra |
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1773 |
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Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. |
Title |
Intervalley cyclotron-impurity resonance of electrons in n-Ge |
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Journal Article |
Year |
1976 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
24 |
Issue |
3 |
Pages |
125-128 |
Keywords |
n-Ge, cyclotron-impurity resonance |
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1730 |
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Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. |
Title |
Population of excited-states of small admixtures in germanium |
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Conference Article |
Year |
1978 |
Publication |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Volume |
42 |
Issue |
6 |
Pages |
1154-1159 |
Keywords |
Ge, excited states, admixtures |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia |
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1723 |
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Gershenzon, Ye. M.; Goltsman, G. N.; Yelantyev, A. I.; Petrova, Ye. B.; Ptitsina, N. G.; Filatov, V. S. |
Title |
Lecture demonstrations of properties of superconductors and liquid helium |
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Journal Article |
Year |
1987 |
Publication |
USSR Rept Phys. Math. JPRS UPM |
Abbreviated Journal |
USSR Rept Phys. Math. JPRS UPM |
Volume |
24 |
Issue |
7 |
Pages |
51 |
Keywords |
demonstrations, lections |
Abstract |
New demonstrations for low temperature physics courses are described. Two transparent Dewar vacuum flasks fitting one inside the other with the external flask for nitrogen and the internal flask for helium are used. The helium temperature can be regulated in the 4.2 to 1.6 K range and the effects of reducing helium to the superfluid state at 2.17 K can be shown: boiling abruptly stops and superfluid flow appears. In order to show the electric and magnetic characteristics of superconductivity, a superconducting NbTi solenoid containing nonsuperconducting wire and germanium and superconducting Nb materials with different critical temperatures is placed in the helium refrigerant vessel. The fall of the resistance at the critical temperatures can be shown. In order to show magnetic field and superconductive current flow properties a shunt of superconductive material is connected in parallel to the coil and is enclosed in a teflon container with a heater which can vary its temperature. When it is heated and not superconductive, magnetic field effects can be demonstrated and when it is unheated and superconducting a continuous current can be demonstrated. |
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1704 |
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Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M. |
Title |
The excitonic Zeeman effect in uniaxially-strained germanium |
Type |
Journal Article |
Year |
1987 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
65 |
Issue |
6 |
Pages |
1233-1241 |
Keywords |
Ge, Zeeman effect |
Abstract |
We have carried out a high-resolution spectroscopic study of the absorption of submillimeter radiation by free excitons in germanium compressed along the [ 1 11 ] axis in a magnetic field parallel to the compression axis. In particular, we studied the splitting of the 1s- 2p transition in fields up to 6 kOe at T = 1.6 K, and observed a complex pattern in the Zeeman splitting which we believe is related to the effect of thermal motion of the excitons in a magnetic field on their internal structure (the magneto-Stark effect). The calculated submillimeter spectrum of excitons agrees with the experimental data. We predict that in a magnetic field the energy of the 2p, term is a minimum at a finite value of the exciton momentum perpendicular to the field-that is, the energy minimum forms a ring in momentum space. It follows that the density of states for this term must be a nonmonotonic function of the energy. A theory is developed of analogous phenomena in positronium. |
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1705 |
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Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G. |
Title |
Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves |
Type |
Conference Article |
Year |
1986 |
Publication |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Volume |
50 |
Issue |
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Pages |
280-281 |
Keywords |
Ge, axial compression loads, excitons, germanium, magnetic spectroscopy, submillimeter waves, Zeeman effect |
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Russian |
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0367-6755 |
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3rd Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Kiev, Ukrainian SSR, May 1985 |
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1708 |
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Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I. |
Title |
Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity |
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Conference Article |
Year |
1996 |
Publication |
Czech. J. Phys. |
Abbreviated Journal |
Czech. J. Phys. |
Volume |
46 |
Issue |
S2 |
Pages |
857-858 |
Keywords |
NbC films |
Abstract |
Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory. |
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0011-4626 |
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no |
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1617 |
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Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I. |
Title |
Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films |
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Journal Article |
Year |
1998 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
Volume |
57 |
Issue |
24 |
Pages |
15623-15628 |
Keywords |
NbC films |
Abstract |
A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data. |
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0163-1829 |
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1585 |
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Karasik, B. S.; Il'in, K. S.; Ptitsina, N. G.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen', E. V.; Krasnosvobodtsev, S. I. |
Title |
Electron-phonon scattering rate in impure NbC films |
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Abstract |
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1998 |
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NASA/ADS |
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NASA/ADS |
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Y35.08 |
Keywords |
NbC films |
Abstract |
The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data. |
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American Physical Society, Annual March Meeting, March 16-20, 1998 Los Angeles, CA |
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1591 |
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Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. |
Title |
Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films |
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Journal Article |
Year |
1995 |
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JETP |
Abbreviated Journal |
JETP |
Volume |
80 |
Issue |
5 |
Pages |
960-964 |
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Abstract |
The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation. |
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RPLAB @ phisix @ |
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989 |
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Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
Title |
Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
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Journal Article |
Year |
1997 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
Volume |
56 |
Issue |
16 |
Pages |
10089-10096 |
Keywords |
disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity |
Abstract |
The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range. |
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0163-1829 |
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1766 |
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Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. |
Title |
Electron–phonon interaction in disordered conductors |
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Journal Article |
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1999 |
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Phys. Rev. B Condens. Matter |
Abbreviated Journal |
Phys. Rev. B Condens. Matter |
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263-264 |
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190-192 |
Keywords |
disordered conductors, electron-phonon interaction |
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The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model. |
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0921-4526 |
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1765 |
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Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Title |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
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Journal Article |
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2000 |
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JETP Lett. |
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JETP Lett. |
Volume |
71 |
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1 |
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31-34 |
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2DEG, GaAs/AlGaAs heterostructures |
Abstract |
The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons. |
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0021-3640 |
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http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) |
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1559 |
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Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
Title |
Low energy excitation in La2CuO4 |
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Journal Article |
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1990 |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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3 |
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5 |
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832-837 |
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metal-dielectric-La2CuO4, monocrystals |
Abstract |
Measurements of transmission and photoconductivity spectra in submillimeter wave length range as well as of capacity C and conductivity G in the region of acoustic frequencies of metal-dielectric-La2CuO4 system at low temperatures are performed using La2CuO4 monocrystals. Optical spectra posses a threshold character, a sharp decrease of transmission and photocoductivity signal occurs in the energy region hν>1.5 MeV. C(ω,T) and G(ω, T) dependences have a universal form typical of Debye type relaxation processes. Relaxation time dependence is of thermoactivated character τ(T)∼exp(ξ/T) with the gap value ξ≅2 meV. It is assumed that excitations with characteristic energy of ∼2 meV exist in La2CuO4. A possible nature of the detected low-energy excitations is discussed. |
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1688 |
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