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Author Doerr, C.R.; Zhang, C.; Winzer, P.J.
Title Monolithic InP multi-wavelength coherent receiver Type Conference Article
Year 2010 Publication Conference on optical fiber communication, collocated national fiber optic engineers conference Abbreviated Journal Conf. OFC/NFOEC
Volume Issue Pages 1-3
Keywords InP balanced detector, waveguide grating, polarization splitter, from chiralphotonics
Abstract We propose and demonstrate a novel four-channel monolithic polarization-diversity dual-quadrature coherent receiver with balanced detection in InP. It uses an interleave-chirped arrayed waveguide grating that acts simultaneously as a demultiplexer, 90° hybrid, and polarization splitter.
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Call Number Serial 851
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Author Doi, Y.; Wang, Z.; Ueda, T.; Nickels, P.; Komiyama, S.; Patrashin, M.; Hosako, I.; Matsuura, S.; Shirahata, M.; Sawayama, Y.; Kawada, M.
Title CSIP – a novel photon-counting detector applicable for the SPICA far-infrared instrument Type Journal Article
Year 2009 Publication SPICA Abbreviated Journal SPICA
Volume Issue SPICA Workshop 2009 Pages
Keywords detectors; Infrared
Abstract We describe a novel GaAs/AlGaAs double-quantumwell device for the infrared photon detection, called ChargeSensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a QW as an charge integrating gate and the signal ampli<ef><ac><81>cation by another QW as a channel with very high gain, which provides us with extremely high responsivity (104 – 106 A/W). It has been demonstrated that the CSIP designed for the mid-infrared wavelength (14.7 μm) has an excellent sensitivity; the noise equivalent power (NEP) of 7 × 10-19 W/ with the quantum effciency of ~ 2%. Advantages of the CSIP against the other highly sensitive detectors are, huge dynamic range of > 106, low output impedance of 103 – 104 Ohms, and relatively high operation temperature (> 2 K). We discuss possible applications of the CSIP to FIR photon detection covering 35 – 60 μm waveband, which is a gap uncovered with presently available photoconductors.
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Call Number RPLAB @ gujma @ Serial 672
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Author Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P.
Title Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors Type Journal Article
Year 2015 Publication Carbon Abbreviated Journal Carbon
Volume 87 Issue Pages 330-337
Keywords carbon nanotubes, CNT detectors, field effect transistors, FET
Abstract Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics.
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ISSN 0008-6223 ISBN Medium
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Call Number Serial 1778
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Author Elezov, M. S.; Shcherbatenko, M. L.; Sych, D. V.; Goltsman, G. N.
Title Development of control method for an optimal quantum receiver Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012126
Keywords Helstrom bound, SPD, single photon detector, below quantum limit
Abstract We propose a method for optimal displacement controlling of an optimal quantum receiver for registrations a binary coherent signal. An optimal receiver is able to distinguish between two phase-modulated states of a coherent signal. The optimal receiver controlling method can be used later in practice in various physical implementations of the optimal receiver.
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ISSN 1742-6588 ISBN Medium
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Call Number Serial 1264
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Author Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G.
Title Graphene-based lateral Schottky diodes for detecting terahertz radiation Type Conference Article
Year 2018 Publication Proc. Optical Sensing and Detection V Abbreviated Journal Proc. Optical Sensing and Detection V
Volume 10680 Issue Pages 30-39
Keywords graphene, terahertz radiation, detectors, Schottky diodes, carbon nanotubes, plasma waves
Abstract Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
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Publisher Spie Place of Publication Editor Berghmans, F.; Mignani, A.G.
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Call Number 10.1117/12.2307020 Serial 1306
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