Records |
Author |
Yagoubov, P.; Hübers, H.-W.; Gol’tsman, G.; Semenov, A.; Gao, J.; Hoogeveen, R.; de Graauw, T.; Birk, M.; Selig, A.; de Korte, P. |
Title |
Hot-electron bolometer mixers – technology for far-infrared heterodyne instruments in future atmospheric chemistry missions |
Type |
Conference Article |
Year |
2001 |
Publication |
Proc. 3rd Int. Symp. Submillimeter Wave Earth Observation From Space |
Abbreviated Journal |
Proc. 3rd Int. Symp. Submillimeter Wave Earth Observation From Space |
Volume |
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Issue |
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Pages |
57-69 |
Keywords |
HEB mixers |
Abstract |
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Address |
Delmenhorst |
Corporate Author |
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Thesis |
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Publisher |
Logos-Verlag |
Place of Publication |
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Editor |
Buehler, S.; Berlin |
Language |
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Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
3-89722-700-2 |
Medium |
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Area |
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Expedition |
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Conference |
International Symposium on Submillimeter Wave Earth Observation from Space, ISSMWEOS01 |
Notes |
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Approved |
no |
Call Number |
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Serial |
1549 |
Permanent link to this record |
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Author |
Zolotov, P. I.; Semenov, A. V.; Divochiy, A. V.; Goltsman, G. N.; Romanov, N. R.; Klapwijk, T. M. |
Title |
Dependence of photon detection efficiency on normal-state sheet resistance in marginally superconducting films of NbN |
Type |
Journal Article |
Year |
2021 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
31 |
Issue |
5 |
Pages |
1-5 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We present an extensive set of data on nanowire-type superconducting single-photon detectors based on niobium-nitride (NbN) to establish the empirical correlation between performance and the normal-state resistance per square. We focus, in particular, on the bias current, compared to the expected depairing current, needed to achieve a near-unity detection efficiency for photon detection. The data are discussed within the context of a model in which the photon energy triggers the movement of vortices i.e. superconducting dissipation, followed by thermal runaway. Since the model is based on the non-equilibrium theory for conventional superconductors deviations may occur, because the efficient regime is found when NbN acts as a marginal superconductor in which long-range phase coherence is frustrated. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1051-8223 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
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Approved |
no |
Call Number |
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Serial |
1222 |
Permanent link to this record |
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Author |
Zolotov, P.; Semenov, A.; Divochiy, A.; Goltsman, G. |
Title |
A comparison of VN and NbN thin films towards optimal SNSPD efficiency |
Type |
Journal Article |
Year |
2021 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
31 |
Issue |
5 |
Pages |
1-4 |
Keywords |
NbN SSPD, SNSPD, WSi |
Abstract |
Based on early phenomenological ideas about the operation of superconducting single-photon detectors (SSPD or SNSPD), it was expected that materials with a lower superconducting gap should perform better in the IR range. The plausibility of this concept could be checked using two popular SSPD materials – NbN and WSi films. However, these materials differ strongly in crystallographic structure (polycrystalline B1 versus amorphous), which makes their dependence on disorder different. In our work we present a study of the single-photon response of SSPDs made from two disordered B1 structure superconductors – vanadium nitride and niobium nitride thin films. We compare the intrinsic efficiency of devices made from films with different sheet resistance values. While both materials have a polycrystalline structure and comparable diffusion coefficient values, VN films show metallic behavior over a wide range of sheet resistance, in contrast to NbN films with an insulator-like temperature dependence of resistivity, which may be partially due to enhanced Coulomb interaction, leading to different starting points for the normal electron density of states. The results show that even though VN devices are more promising in terms of theoretical predictions, their optimal performance was not reached due to lower values of sheet resistance. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1051-8223 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
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Approved |
no |
Call Number |
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Serial |
1223 |
Permanent link to this record |