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Author Trifonov, A.; Tong, C.-Y. E.; Blundell, R.; Ryabchun, S.; Gol'tsman, G. url  doi
openurl 
  Title Probing the stability of HEB mixers with microwave injection Type Journal Article
  Year 2015 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 25 Issue 3 Pages 2300404 (1 to 4)  
  Keywords NbN HEB mixer, stability, Allan-variance  
  Abstract Using a microwave probe as a tool, we have performed experiments aimed at understanding the origin of the output-power fluctuations in hot-electron-bolometer (HEB) mixers. We use a probe frequency of 1.5 GHz. The microwave probe picks up impedance changes of the HEB, which are examined upon demodulation of the reflected wave outside the cryostat. This study shows that the HEB mixer operates in two different regimes under a terahertz pump. At a low pumping level, strong pulse modulation is observed, as the device switches between the superconducting state and the normal state at a rate of a few megahertz. When pumped much harder, to approximate the low-noise mixer operating point, residual modulation can still be observed, showing that the HEB mixer is intrinsically unstable even in the resistive state. Based on these observations, we introduced a low-frequency termination to the HEB mixer. By terminating the device in a 50-Ω resistor in the megahertz frequency range, we have been able to improve the output-power Allan time of our HEB receiver by a factor of four to about 10 s for a detection bandwidth of 15 MHz, with a corresponding gain fluctuation of about 0.035%.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1355  
Permanent link to this record
 
 
Author Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. url  doi
openurl 
  Title Photon absorption near the gap frequency in a hot electron bolometer Type Journal Article
  Year 2017 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 27 Issue 4 Pages 1-4  
  Keywords NBN HEB mixer  
  Abstract The superconducting energy gap is a fundamental characteristic of a superconducting film, which, together with the applied pump power and the biasing setup, defines the instantaneous resistive state of the Hot Electron Bolometer (HEB) mixer at any given bias point on the I-V curve. In this paper we report on a series of experiments, in which we subjected the HEB to radiation over a wide frequency range along with parallel microwave injection. We have observed three distinct regimes of operation of the HEB, depending on whether the radiation is above the gap frequency, far below it or close to it. These regimes are driven by the different patterns of photon absorption. The experiments have allowed us to derive the approximate gap frequency of the device under test as about 585 GHz. Microwave injection was used to probe the HEB impedance. Spontaneous switching between the superconducting (low resistive) state and a quasi-normal (high resistive) state was observed. The switching pattern depends on the particular regime of HEB operation and can assume a random pattern at pump frequencies below the gap to a regular relaxation oscillation running at a few MHz when pumped above the gap.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1558-2515 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1331  
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Author Vachtomin, Y. B.; Antipov, S. V.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Zhang, W.; Svechnikov, S. I.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Gol’tsman, G. N. url  doi
openurl 
  Title Quasioptical hot electron bolometer mixers based on thin NBN films for terahertz region Type Conference Article
  Year 2006 Publication Proc. 16th Int. Crimean Microwave and Telecommunication Technology Abbreviated Journal Proc. 16th Int. Crimean Microwave and Telecommunication Technology  
  Volume 2 Issue Pages 688-689  
  Keywords NbN HEB mixers  
  Abstract Presented in this paper are the performances of HEB mixers based on 2-3.5 nm thick NbN films integrated with log-periodic spiral antenna. Double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. Mixer gain bandwidth is 5.2 GHz. Local oscillator power is 1-3 muW for mixers with different active area  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1445  
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Author Vahtomin, Yuriy B.; Finkel, Matvey I.; Antipov, Sergey V.; Voronov, Boris M.; Smirnov, Konstantin V.; Kaurova, Natalia S.; Drakinski, Vladimir N.; Gol'tsman, Gregogy N. url  openurl
  Title Gain bandwidth of phonon-cooled HEB mixer made of NbN thin film with MgO buffer layer on Si Type Conference Article
  Year 2002 Publication Proc. 13th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 13th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 259-270  
  Keywords NbN HEB mixers, conversion gain bandwidth  
  Abstract We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Cambridge, MA, USA Editor Harvard university  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 325  
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Author Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. url  openurl
  Title The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer Type Journal Article
  Year 2003 Publication J. of communications technol. & electronics Abbreviated Journal J. of communications technol. & electronics  
  Volume 48 Issue 6 Pages 671-675  
  Keywords NbN HEB mixers  
  Abstract Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.  
  Address  
  Corporate Author Thesis  
  Publisher MAIK Nauka/Interperiodica, Birmingham, AL Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1064-2269 ISBN Medium  
  Area Expedition Conference  
  Notes https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) Approved no  
  Call Number Vakhtomin2003 Serial 1522  
Permanent link to this record
 
 
Author Yagoubov, P.; Gol'tsman, G.; Voronov, B.; Svechnikov, S.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekström, H.; Semenov, A.; Gousev, Yu.; Renk, K. url  openurl
  Title Quasioptical phonon-cooled NbN hot-electron bolometer mixer at THz frequencies Type Conference Article
  Year 1996 Publication Proc. 7th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 7th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 303-317  
  Keywords NbN HEB mixers  
  Abstract In our experiments we tested phonon-cooled hot-electron bolometer (HEB) quasioptical mixer based on spiral antenna designed for 0.5-1.2 THz frequency band and fabricated on sapphire, Si-coated sapphire and high resistivity silicon substrates. HEB devices were produced from thin superconducting NbN film 3.5-6 nm thick with the critical temperature of about 11-12 K. For these devices we achieved the receiver noise temperature T R (DSB) = 3000 K in the 500-700 GHz frequency range and an IF bandwidth of 3-4 GHz. Prelimanary measurements at frequencies 1-1.2 THz resulted the receiver noise temperature about 9000 K (DSB).  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1614  
Permanent link to this record
 
 
Author Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Gol'tsman, G.; Svechnikov, S.; Gershenzon, E. url  doi
openurl 
  Title Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies Type Journal Article
  Year 1998 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 73 Issue 19 Pages 2814-2816  
  Keywords NbN HEB mixers, noise temperature, local oscillator power  
  Abstract In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 911  
Permanent link to this record
 
 
Author Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Hübers, H.-W.; Schubert, J.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E. url  openurl
  Title NbN hot electron bolometric mixers at frequencies between 0.7 and 3.1 THz Type Conference Article
  Year 1999 Publication Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 10th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 238-246  
  Keywords NbN HEB mixers  
  Abstract The performance of NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixers is investigated in the 0.7-3.1 THz frequency range. The devices are made from a 3.5-4 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The length of the bolometer microbridge is 0.1- 0.2 gm, the width is 1-2 gm. The best results of the DSB receiver noise temperature measured at 1.5 GHz intermediate frequency are: 800 K at 0.7 THz, 1100 K at 1.6 THz, 2000 K at 2.5 THz and 4200 K at 3.1 THz. The measurements were performed with a far infrared laser as the local oscillator (LO) source. The estimated LO power required is less than 500 nW at the receiver input. First results on the spiral antenna polarization measurements are reported.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1575  
Permanent link to this record
 
 
Author Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E. url  doi
openurl 
  Title Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies Type Journal Article
  Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 9 Issue 2 Pages 3757-3760  
  Keywords NbN HEB mixers  
  Abstract The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1569  
Permanent link to this record
 
 
Author Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol’tsman, G.; Gershenzon, E. url  doi
openurl 
  Title Performance of NbN phonon-cooled hot-electron bolometric mixer at Terahertz frequencies Type Conference Article
  Year 1998 Publication Proc. 6-th Int. Conf. Terahertz Electron. Abbreviated Journal Proc. 6-th Int. Conf. Terahertz Electron.  
  Volume Issue Pages 149-152  
  Keywords NbN HEB mixers  
  Abstract The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The results of the DSB noire temperature are: 1300 K at 650 GHz, 4700 K at 2.5 TBz and 10000 K at 3.12 THz. The RF bandwidth of the receiver is at least 2.5 THz. The amount of LO power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain is measured to be -9 dB, the total conversion gain -14 dB.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171)  
  Notes Approved no  
  Call Number Serial 1582  
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