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Bryant, Garnett W.; García de Abajo, F. Javier; Aizpurua, Javier |
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Title |
Mapping the Plasmon Resonances of Metallic Nanoantennas |
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2008 |
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Nano Letters |
Abbreviated Journal |
Nano Lett. |
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5 |
Issue |
2 |
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631-636 |
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Keywords |
optical antennas |
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Abstract |
We study the light scattering and surface plasmon resonances of Au nanorods that are commonly used as optical nanoantennas in analogy to dipole radio antennas for chemical and biodetection field-enhanced spectroscopies and scanned-probe microscopies. With the use of the boundary element method, we calculate the nanorod near-field and far-field response to show how the nanorod shape and dimensions determine its optical response. A full mapping of the size (length and radius) dependence for Au nanorods is obtained. The dipolar plasmon resonance wavelength λ shows a nearly linear dependence on total rod length L out to the largest lengths that we study. However, L is always substantially less than λ/2, indicating the difference between optical nanoantennas and long-wavelength traditional λ/2 antennas. Although it is often assumed that the plasmon wavelength scales with the nanorod aspect ratio, we find that this scaling does not apply except in the extreme limit of very small, spherical nanoparticles. The plasmon response depends critically on both the rod length and radius. Large (500 nm) differences in resonance wavelength are found for structures with different sizes but with the same aspect ratio. In addition, the plasmon resonance deduced from the near-field enhancement can be significantly red-shifted due to retardation from the resonance in far-field scattering. Large differences in near-field and far-field response, together with the breakdown of the simple scaling law must be accounted for in the choice and design of metallic λ/2 nanoantennas. We provide a general, practical map of the resonances for use in locating the desired response for gold nanoantennas. |
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RPLAB @ gujma @ |
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737 |
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Bryerton, E.; Percy, R.; Bass, R.; Schultz, J.; Oluleye, O.; Lichtenberger, A.; Ediss, G. A.; Pan, S. K.; Goltsman, G. N. |
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Title |
Receiver measurements of pHEB beam lead mixers on 3-μm silicon |
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Conference Article |
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2005 |
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Proc. 30th IRMMW / 13th THz |
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Proc. 30th IRMMW / 13th THz |
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271-272 |
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We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 μm thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz. |
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Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics |
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1460 |
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Buchanan, Mark |
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Nothing's impossible |
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2011 |
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Nature Physics |
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Nat. Phys. |
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7 |
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5 |
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fromIPMRAS |
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RPLAB @ gujma @ |
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839 |
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Buchanan, Mark |
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Body of evidence |
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2010 |
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Nature Physics |
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Nat. Phys. |
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6 |
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fromIPMRAS |
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RPLAB @ gujma @ |
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837 |
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Author |
Budyanskij, M. Ya.; Sejdman, L. A.; Voronov, B. M.; Gubkina, T. O. |
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Title |
Increase of reproducibility in production of superconducting thin films of niobium nitride |
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Journal Article |
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Year |
1992 |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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5 |
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10 |
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1950-1954 |
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NbN films |
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Technique to control the composition of gas medium in the reactive magnetron discharge and the composition of the deposited films of niobium nitride using electrical parameters of discharge only, in particular, by δU = Up – Uar value at contant stabilized discharge current is described. Technique to select optimal condition for deposition of niobium nitride films when the films have composition meeting chemical formula, is suggested. Thin films of niobium nitride with up to 7 nm thickness and with rather high temperature of transition into superconducting state Tk > 10 K) and with low width of transition (δ < 0.6 K), are obtained. It is determined, that substrate material and dielectric sublayer do not affect. Tk value, while difference in coefficients of thermal expansion of substrate and of film affects δTk value. |
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0131-5366 |
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1675 |
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