Records |
Author |
Finkel, M.; Thierschmann, H.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M. |
Title |
Performance of THz components based on microstrip PECVD SiNx technology |
Type |
Journal Article |
Year |
2017 |
Publication |
IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
Volume |
7 |
Issue |
6 |
Pages |
765-771 |
Keywords |
transmission line measurements, power transmission lines, dielectrics, couplers, submillimeter wave circuits, coplanar waveguides, micromechanical devices |
Abstract |
We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope. |
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2156-342X |
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1294 |
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Author |
Floet, D. Wilms; Baselmans, J. J. A.; Klapwijk, T. M.; Gao, J. R. |
Title |
Resistive transition of niobium superconducting hot-electron bolometer mixers |
Type |
Journal Article |
Year |
1998 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
73 |
Issue |
19 |
Pages |
2826 |
Keywords |
HEB |
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0003-6951 |
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543 |
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Author |
Ganzevles, W. F. M.; Gao, J. R.; de Korte, P. A. J.; Klapwijk, T. M. |
Title |
Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers |
Type |
Journal Article |
Year |
2001 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
79 |
Issue |
15 |
Pages |
2483-2485 |
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0003-6951 |
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311 |
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Gao, G. R.; Hovenier, J. N.; Yang, Z. Q.; Baselmans, J. J. A.; Baryshev, A.; Hajenius, M.; Klapwijk, T. M.; Adam, A. J. L.; Klaassen, T. O.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L. |
Title |
A novel terahertz heterodyne receiver based on a quantum cascade laser and a superconducting bolometer |
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Conference Article |
Year |
2005 |
Publication |
Proc. 16th Int. Symp. Space Terahertz Technol. |
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Pages |
19-23 |
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Göteborg, Sweden |
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RPLAB @ s @ qc_lasers_gao_isstt16 |
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367 |
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Gao, J. R.; Hovenier, J. N.; Yang, Z. Q.; Baselmans, J. J. A.; Baryshev, A.; Hajenius, M.; Klapwijk, T. M.; Adam, A. J. L.; Klaassen, T. O.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L. |
Title |
Terahertz heterodyne receiver based on a quantum cascade laser and a superconducting bolometer |
Type |
Journal Article |
Year |
2005 |
Publication |
Appl. Phys. Lett. |
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Issue |
86 |
Pages |
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art.num. 244104 |
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RPLAB @ s @ qc_lasers_gao |
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368 |
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Gao, J. R.; Hajenius, M.; Baselmans, J. J. A.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. |
Title |
NbN hot electron bolometer mixers with superior performance for space applications |
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Conference Article |
Year |
2004 |
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Proc. Int. workshop on low temp. electronics |
Abbreviated Journal |
Proc. Int. workshop on low temp. electronics |
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11-17 |
Keywords |
NbN HEB mixers, applications |
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Noordwijk |
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Armandillo, E.; Leone, B. |
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International workshop on low temperature electronics- WOLTE 6 - Noordwijk |
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1496 |
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Gao, J. R.; Hajenius, M.; Baselmans, J. J. A.; Yang, Z. Q.; Baryshev, A. M.; Barends, R.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G.; Callaos, N. |
Title |
Twin-slot antenna coupled NbN hot electron bolometer mixers for space applications |
Type |
Conference Article |
Year |
2005 |
Publication |
Proc. 9-th WMSCI |
Abbreviated Journal |
Proc. 9-th WMSCI |
Volume |
9 |
Issue |
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Pages |
148-153 |
Keywords |
NbN HEB mixers |
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International Institute of Informatics and Systemics |
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9806560639, 9789806560635 |
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9th World Multi-Conference on Systemics, Cybernetics and Informatics |
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1480 |
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Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M. |
Title |
Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate |
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Journal Article |
Year |
2007 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
91 |
Issue |
6 |
Pages |
062504 (1 to 3) |
Keywords |
NbN films, nanofilms |
Abstract |
The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.
The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS. |
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0003-6951 |
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1425 |
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Author |
Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A. |
Title |
Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? |
Type |
Conference Article |
Year |
2006 |
Publication |
Proc. 17th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 17th Int. Symp. Space Terahertz Technol. |
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Pages |
187-189 |
Keywords |
NbN HEB mixers |
Abstract |
We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm). |
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1439 |
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Author |
Gao, J. R.; Hajenius, M.; Yang, Z. Q.; Baselmans, J. J. A.; Khosropanah, P.; Barends, R.; Klapwijk, T. M. |
Title |
Terahertz superconducting hot electron bolometer heterodyne receivers |
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Journal Article |
Year |
2007 |
Publication |
IEEE Trans. Appl. Supercond. |
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Volume |
17 |
Issue |
2 |
Pages |
252-258 |
Keywords |
HEB, mixer, direct detection effect |
Abstract |
We highlight the progress on NbN hot electron bolometer (HEB) mixers achieved through fruitful collaboration between SRON Netherlands Institute for Space Research and Delft University of Technology, the Netherlands. This includes the best receiver noise temperatures of 700 K at 1.63 THz using a twin-slot antenna mixer and 1050 K at 2.84 THz using a spiral antenna coupled HEB mixer. The mixers are based on thin NbN films on Si and fabricated with a new contact-process and-structure. By reducing their areas HEB mixers have shown an LO power requirement as low as 30 nW. Those small HEB mixers have demonstrated equivalent sensitivity as those with large areas provided the direct detection effect due to broadband radiation is removed. To manifest that a HEB based heterodyne receiver can in practice be used at arbitrary frequencies above 2 THz, we demonstrate a 2.8 THz receiver using a THz quantum cascade laser (QCL) as local oscillator. |
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1051-8223 |
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RPLAB @ asmirn @ |
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557 |
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