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Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N. |
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Single-photonics at telecom wavelengths using nanowire superconducting single photon detectors |
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Conference Article |
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2007 |
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CLEO/QELS |
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CLEO/QELS |
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QTuF6 (1 to 2) |
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SSPD, SNSPD |
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Novel single-photon detectors based on NbN superconducting nanostructures promise orders-of- magnitude improvement over InGaAs APDs. We demonstrate this improved performance for the first time by measuring the g(2)(τ) on single photon states produced by a quantum dot at telecom wavelength. |
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Optical Society of America |
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Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies |
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Call Number |
Zinoni:07 |
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1432 |
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Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N. |
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Erratum: “Single photon experiments at telecom wavelengths using nanowire superconducting detectors” [Appl. Phys. Lett. 91, 031106 (2007)] |
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Journal Article |
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2010 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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96 |
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8 |
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089901 |
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SSPD, SNSPD, erratum |
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A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered. |
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0003-6951 |
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1395 |
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Zolotov, P.; Divochiy, A.; Korneeva, Yu.; Vakhtomin, Yu.; Seleznev, V.; Smirnov, K. |
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Capability investigation of superconducting single-photon detectors, optimized for 800–1200 nm spectrum range |
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Miscellaneous |
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2015 |
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3th ICQT |
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3th ICQT |
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SSPD, SNSPD |
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Hotel Ukraina (Radisson), Moscow |
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1253 |
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Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Moshkova, M.; Morozov, P.; Seleznev, V.; Smirnov, K. |
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Photon-number-resolving SSPDs with system detection efficiency over 50% at telecom range |
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Conference Article |
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2018 |
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Proc. AIP Conf. |
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1936 |
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1 |
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020019 |
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NbN PNR SSPD, SNSPD |
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We used technology of making high-efficiency superconducting single-photon detectors as a basis for improvement of photon-number-resolving devices. By adding optical cavity and using an improved NbN superconducting film, we enhanced previously reported system detection efficiency at telecom range for such detectors. Our results show that implementation of optical cavity helps to develop four-section device with quantum efficiency over 50% at 1.55 µm. Performed experimental studies of detecting multi-photon optical pulses showed irregularities over defining multi-photon through single-photon quantum efficiency. |
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doi:10.1063/1.5025457 |
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1231 |
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Zolotov, P.; Semenov, A.; Divochiy, A.; Goltsman, G. |
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A comparison of VN and NbN thin films towards optimal SNSPD efficiency |
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2021 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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31 |
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5 |
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1-4 |
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NbN SSPD, SNSPD, WSi |
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Based on early phenomenological ideas about the operation of superconducting single-photon detectors (SSPD or SNSPD), it was expected that materials with a lower superconducting gap should perform better in the IR range. The plausibility of this concept could be checked using two popular SSPD materials – NbN and WSi films. However, these materials differ strongly in crystallographic structure (polycrystalline B1 versus amorphous), which makes their dependence on disorder different. In our work we present a study of the single-photon response of SSPDs made from two disordered B1 structure superconductors – vanadium nitride and niobium nitride thin films. We compare the intrinsic efficiency of devices made from films with different sheet resistance values. While both materials have a polycrystalline structure and comparable diffusion coefficient values, VN films show metallic behavior over a wide range of sheet resistance, in contrast to NbN films with an insulator-like temperature dependence of resistivity, which may be partially due to enhanced Coulomb interaction, leading to different starting points for the normal electron density of states. The results show that even though VN devices are more promising in terms of theoretical predictions, their optimal performance was not reached due to lower values of sheet resistance. |
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1051-8223 |
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1223 |
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