Author  |
Title |
Year |
Publication |
Volume |
Pages |
| Svechnikov, S.; Verevkin, A.; Voronov, B.; Menschikov, E.; Gershenzon, E.; Gol'tsman, G. |
Quasioptical phonon-cooled NbN hot electron bolometer mixers at 0.5-1.1 THz |
1998 |
Proc. 9th Int. Symp. Space Terahertz Technol. |
|
45-51 |
| Słysz, W.; Węgrzecki, M.; Bar, J.; Grabiec, P.; Gol'tsman, G. N.; Verevkin, A.; Sobolewski, R. |
NbN superconducting single-photon detector coupled with a communication fiber |
2005 |
Elektronika : konstrukcje, technologie, zastosowania |
46 |
51-52 |
| Tarkhov, M.; Claudon, J.; Poizat, J. Ph.; Korneev, A.; Divochiy, A.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Semenov, A. V.; Gol'tsman, G. |
Ultrafast reset time of superconducting single photon detectors |
2008 |
Appl. Phys. Lett. |
92 |
241112 (1 to 3) |
| Tong, C. E.; Blundell, R.; Papa, D. C.; Smith, M.; Kawamura, J.; Gol'tsman, G.; Gershenzon, E.; Voronov, B. |
An all solid-state superconducting heterodyne receiver at terahertz frequencies |
1999 |
IEEE Microw. Guid. Wave Lett. |
9 |
366-368 |
| Tret'yakov, I. V.; Kaurova, N. S.; Voronov, B. M.; Anfert'ev, V. A.; Revin, L. S.; Vaks, V. L.; Gol'tsman, G. N. |
The influence of the diffusion cooling on the noise band of the superconductor NbN hot-electron bolometer operating in the terahertz range |
2016 |
Tech. Phys. Lett. |
42 |
563-566 |
| Tretyakov, I. V.; Ryabchun, S. A.; Maslennikov, S. N.; Finkel, M. I.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Gol'tsman, G.N. |
NbN HEB mixer: fabrication, noise temperature reduction and characterization |
2008 |
Proc. Basic problems of superconductivity |
|
|
| Trifonov, A.; Tong, C.-Y. E.; Blundell, R.; Ryabchun, S.; Gol'tsman, G. |
Probing the stability of HEB mixers with microwave injection |
2015 |
IEEE Trans. Appl. Supercond. |
25 |
2300404 (1 to 4) |
| Trifonov, V. A.; Karasik, B. S.; Zorin, M. A.; Gol'tsman, G. N.; Gershenzon, E. M.; Lindgren, M.; Danerud, M.; Winkler, D. |
9.6 μm wavelength mixing in a patterned YBa2Cu3O7-δ thin film |
1996 |
Proc. 7th Int. Symp. Space Terahertz Technol. |
|
337-348 |
| Vachtomin, Y. B.; Antipov, S. V.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Gol'tsman, G. N. |
Noise temperature measurements of NbN phonon-cooled hot electron bolometer mixer at 2.5 and 3.8 THz |
2004 |
Proc. 15th Int. Symp. Space Terahertz Technol. |
|
236-241 |
| Vachtomin, Yu. B.; Antipov, S. V.; Kaurova, N. S.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Svechnikov, S. I.; Grishina, E. V.; Voronov, B. M.; Gol'tsman, G. N. |
Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess |
2004 |
Proc. 29th IRMMW / 12th THz |
|
329-330 |
| Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
Low energy excitation in La2CuO4 |
1990 |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
3 |
832-837 |
| Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsyna, N. G.; Chulkova, G. M. |
AC losses and submillimeter absorption in single crystals La2CuO4 |
1990 |
Phys. B Condens. Mat. |
165-166 |
1269-1270 |
| Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
1996 |
Phys. Rev. B Condens. Matter. |
53 |
R7592-R7595 |
| Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions |
1996 |
Surface Science |
361-362 |
569-573 |
| Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. |
Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure |
1997 |
Proc. 4-th Int. Semicond. Device Research Symp. |
|
163-166 |
